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Электронный компонент: BYV29B-500

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Philips Semiconductors
Product specification
Rectifier diodes
BYV29B-500
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 500 V
Fast switching
Soft recovery characteristic
V
F
1.03 V
High thermal cycling performance
Low thermal resistance
I
F(AV)
= 9 A
t
rr
60 ns
GENERAL DESCRIPTION
PINNING
SOT404 (D
2
-PAK)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
no connection
power supplies.
2
cathode
1
The BYV29B-500 is supplied in the
SOT404
surface
mounting
3
anode
package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
Peak repetitive reverse voltage
-
500
V
V
RWM
Crest working reverse voltage
-
500
V
V
R
Continuous reverse voltage
-
500
V
I
F(AV)
Average forward current
2
square wave;
= 0.5; T
mb
123 C
-
9
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5; T
mb
123 C
-
18
A
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current.
t = 8.3 ms
-
110
A
sinusoidal; with reapplied V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
2.5
K/W
mounting base
R
th j-a
Thermal resistance junction to
minimum footprint, FR4 board.
-
50
-
K/W
ambient
k
a
1
2
1
3
tab
2
1 it is not possible to make a connection to pin 2 of the SOT404 package
2 Neglecting switching and reverse current losses.
September 2001
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYV29B-500
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
0.90
1.03
V
I
F
= 8 A
-
1.05
1.25
V
I
F
= 20 A
-
1.20
1.40
V
I
R
Reverse current
V
R
= V
RRM
-
2.0
50
A
V
R
= V
RRM
; T
j
= 100 C
-
0.1
0.35
mA
Q
s
Reverse recovery charge
I
F
= 2 A to V
R
30 V;
-
40
60
nC
dI
F
/dt = 20 A/
s
t
rr
Reverse recovery time
I
F
= 1 A to V
R
30 V;
-
50
60
ns
dI
F
/dt = 100 A/
s
I
rrm
Peak reverse recovery current
I
F
= 10 A to V
R
30 V;
-
4.0
5.5
A
dI
F
/dt = 50 A/
s; T
j
= 100C
V
fr
Forward recovery voltage
I
F
= 10 A; dI
F
/dt = 10 A/
s
-
2.5
-
V
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0
5
10
15
0
5
10
15
0.5
0.2
0.1
BYV29
IF(AV) / A
PF / W
D = 1.0
Rs = 0.0190 Ohms
Vo = 0.8900 V
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
137.5
125
112.5
time
time
V F
V
fr
V F
I
F
0
2
4
6
8
10
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYV29
Rs = 0.019 Ohms
Vo = 0.89V
IF(AV) / A
PF / W
Tmb(max) / C
150
145
140
135
130
125
120
September 2001
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYV29B-500
ultrafast
Fig.5. Maximum t
rr
at T
j
= 25C and 100C
Fig.6. Maximum I
rrm
at T
j
= 25C and 100C.
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25C
Fig.9. Transient thermal impedance Z
th j-mb
= f(t
p
)
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100C
0
1
2
30
20
10
0
typ
max
IF / A
0.5
1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100C
1
10
100
1000
Qs / nC
1.0
10
100
-dIF/dt (A/us)
IF = 10 A
2 A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYV29
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
September 2001
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYV29B-500
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.10. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.11. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
September 2001
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
BYV29B-500
ultrafast
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
PRODUCT
DEFINITIONS
STATUS
3
STATUS
4
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design.
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
September 2001
5
Rev 1.000