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DATA SHEET
Product specification
1996 May 24
DISCRETE SEMICONDUCTORS
BYX10G
Rectifier
handbook, 2 columns
M3D116
1996 May 24
2
Philips Semiconductors
Product specification
Rectifier
BYX10G
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
non-repetitive peak reverse voltage
-
1600
V
V
RRM
repetitive peak reverse voltage
-
1600
V
V
RWM
crest working reverse voltage
-
800
V
I
F(AV)
average forward current
T
tp
= 50
C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
-
1.2
A
T
amb
= 60
C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
-
0.6
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RWMmax
-
25
A
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.5
-
65
+175
C
1996 May 24
3
Philips Semiconductors
Product specification
Rectifier
BYX10G
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.9.
For more information please refer to the
"General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 2 A; T
j
= T
j max;
see Fig.6
-
-
1.5
V
I
F
= 2 A; see Fig.6
-
-
1.5
V
I
R
reverse current
V
R
= V
RWMmax
; see Fig.7
-
-
1
A
V
R
= V
RWMmax
; T
j
= 150
C; see Fig.7
-
-
200
A
t
rr
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
-
3
-
s
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
-
30
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
1996 May 24
4
Philips Semiconductors
Product specification
Rectifier
BYX10G
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
a = 1.57; V
R
= V
RWMmax
;
= 0.5.
Lead length 10 mm.
handbook, halfpage
0
40
200
1.6
1.2
0.4
0
0.8
MBG040
80
120
160
IF(AV)
(A)
Ttp (
o
C)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
a = 1.57; V
R
= V
RWMmax
;
= 0.5.
Device mounted as shown in Fig.9.
handbook, halfpage
0
200
160
120
0
MBH392
0.2
0.4
0.6
0.8
1.0
80
40
Tamb (
C)
IF(AV)
(A)
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWMmax
;
= 0.5.
handbook, halfpage
0
0.2
1
1.6
1.2
2.5
2
P
(W)
0.4
0
0.8
MGC737
0.4
0.6
0.8
I
F(AV)
(A)
1.42
a = 3
1.57
Solid line = V
R
.
Dotted line = V
RWM
;
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
1200
0
MBH393
100
200
800
400
VR (V)
Tj
(
C)
1996 May 24
5
Philips Semiconductors
Product specification
Rectifier
BYX10G
Solid line: T
j
= 25
C.
Dotted line: T
j
= 175
C.
Fig.6
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
6
5
4
3
2
1
0
3
1.5
MBG049
IF
(A)
VF (V)
Fig.7
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
10
3
MGC738
10
2
10
1
160
120
40
80
(
A)
I
R
T
j
(
o
C)
V
R
= V
RWMmax
.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
1
MBG030
10
10
2
10
3
1
10
2
10
Cd
(pF)
VR (V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
1996 May 24
6
Philips Semiconductors
Product specification
Rectifier
BYX10G
Fig.10 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1996 May 24
7
Philips Semiconductors
Product specification
Rectifier
BYX10G
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
Fig.11 SOD57.
handbook, full pagewidth
,
,
,
3.81
max
MBC880
k
a
28 min
28 min
4.57
max
0.81
max
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