CGD914_MI_6 860 MHz, 20 dB gain power doubler amplifier
DATA SHEET
Product specification
Supersedes data of 2000 Jul 25
2001 Nov 01
DISCRETE SEMICONDUCTORS
CGD914; CGD914MI
860 MHz, 20 dB gain power
doubler amplifier
andbook, halfpage
M3D252
2001 Nov 01
2
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
PINNING - SOT115J
PIN
DESCRIPTION
CGD914
CGD914MI
1
input
output
2 and 3
common
common
5
+V
B
+V
B
7 and 8
common
common
9
output
input
handbook, halfpage
7
8
9
2
3
5
1
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 45 MHz
19.75
20.25
dB
f = 870 MHz
20.2
21.5
dB
I
tot
total current consumption (DC)
V
B
= 24 V
345
375
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
B
supply voltage
-
30
V
V
i
RF input voltage
-
-
single tone
-
70
dBmV
132 channels flat
-
45
dBmV
T
stg
storage temperature
-
40
+100
C
T
mb
operating mounting base temperature
-
20
+100
C
2001 Nov 01
3
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
CHARACTERISTICS
Bandwidth 45 to 870 MHz; V
B
= 24 V; T
mb
= 35
C; Z
S
= Z
L
= 75
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 45 MHz
19.75
20
20.25
dB
f = 870 MHz
20.2
21
21.5
dB
SL
slope straight line
f = 45 to 870 MHz
0.2
1
1.5
dB
FL
flatness straight line
f = 45 to 100 MHz
-
0.25
-
+
0.25
dB
f = 100 to 800 MHz
-
0.6
-
+0.4
dB
f = 800 to 870 MHz
-
0.45
-
+0.2
dB
flatness narrow band
in each 6 MHz segment
-
-
0.1
dB
s
11
input return losses
f = 40 to 80 MHz
20
-
-
dB
f = 80 to 160 MHz
20
-
-
dB
f = 160 to 320 MHz
18
-
-
dB
f = 320 to 550 MHz
16
-
-
dB
f = 550 to 650 MHz
15
-
-
dB
f = 650 to 750 MHz
14
-
-
dB
f = 750 to 870 MHz
14
-
-
dB
f = 870 to 914 MHz
10
-
-
dB
s
22
output return losses
f = 40 to 80 MHz
21
-
-
dB
f = 80 to 160 MHz
21
-
-
dB
f = 160 to 320 MHz
20
-
-
dB
f = 320 to 550 MHz
19
-
-
dB
f = 550 to 650 MHz
18
-
-
dB
f = 650 to 750 MHz
17
-
-
dB
f = 750 to 870 MHz
16
-
-
dB
f = 870 to 914 MHz
14
-
-
dB
s
21
phase response
f = 50 MHz
-
45
-
+45
deg
s
12
reverse isolation
RF
out
to RF
in
-
-
22
dB
CTB
composite triple beat
79 chs; f
m
= 445.25 MHz; note 1
-
-
-
76
dB
112 chs; f
m
= 649.25 MHz; note 2
-
-
-
64
dB
132 chs; f
m
= 745.25 MHz; note 3
-
-
-
55
dB
79 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
-
-
-
73
dB
112 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
-
-
-
64
dB
132 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
-
-
-
60
dB
X
mod
cross modulation
79 chs; f
m
= 55.25 MHz; note 1
-
-
-
70
dB
112 chs; f
m
= 55.25 MHz; note 2
-
-
-
62
dB
132 chs; f
m
= 55.25 MHz; note 3
-
-
-
57
dB
79 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
-
-
-
69
dB
112 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
-
-
-
65
dB
132 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
-
-
-
63
dB
2001 Nov 01
4
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
Notes
1. V
o
= 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. V
o
= 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. V
o
= 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 493.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 548.5 MHz.
5. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 691.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 746.5 MHz.
6. f
p
= 55.25 MHz; V
p
= 60 dBmV; f
q
= 805.25 MHz; V
q
= 60 dBmV; measured at f
p
+ f
q
= 860.5 MHz.
7. Measured according to DIN45004B: f
p
= 540.25 MHz; V
p
= V
o
; f
q
= 547.25 MHz; V
q
= V
o
-
6 dB; f
r
= 549.25 MHz;
V
r
= V
o
-
6 dB; measured at f
p
+ f
q
-
f
r
= 538.25 MHz.
8. Measured according to DIN45004B: f
p
= 740.25 MHz; V
p
= V
o
; f
q
= 747.25 MHz; V
q
= V
o
-
6 dB; f
r
= 749.25 MHz;
V
r
= V
o
-
6 dB; measured at f
p
+ f
q
-
f
r
= 738.25 MHz.
9. Measured according to DIN45004B: f
p
= 851.25 MHz; V
p
= V
o
; f
q
= 858.25 MHz; V
q
= V
o
-
6 dB; f
r
= 860.25 MHz;
V
r
= V
o
-
6 dB; measured at f
p
+ f
q
-
f
r
= 849.25 MHz.
10. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
CSO Sum composite second
order distortion (sum)
79 chs; f
m
= 446.5 MHz; note 1
-
-
-
71
dB
112 chs; f
m
= 746.5 MHz; note 2
-
-
-
60
dB
132 chs; f
m
= 860.5 MHz; note 3
-
-
-
56
dB
79 chs flat; V
o
= 44 dBmV; f
m
= 548.5 MHz
-
-
-
63
dB
112 chs flat; V
o
= 44 dBmV; f
m
= 746.5 MHz
-
-
-
54
dB
132 chs flat; V
o
= 44 dBmV; f
m
= 860.5 MHz
-
-
-
49
dB
CSO Diff
composite second
order distortion (diff)
79 chs; f
m
= 150 MHz; note 1
-
-
-
59
dB
112 chs; f
m
= 150 MHz; note 2
-
-
-
53
dB
132 chs; f
m
= 150 MHz; note 3
-
-
-
48
dB
79 chs flat; V
o
= 44 dBmV; f
m
= 150 MHz
-
-
-
60
dB
112 chs flat; V
o
= 44 dBmV; f
m
= 150 MHz
-
-
-
59
dB
132 chs flat; V
o
= 44 dBmV; f
m
= 150 MHz
-
-
-
57
dB
NF
noise figure
f = 50 MHz
-
2.5
3
dB
f = 550 MHz
-
2.5
3
dB
f = 750 MHz
-
2.6
3.5
dB
f = 870 MHz
-
3
3.5
dB
d
2
second order distortion
note 4
-
-
-
60
dB
note 5
-
-
-
54
dB
note 6
-
-
-
50
dB
V
o
output voltage
d
im
=
-
60 dB; note 7
69
-
-
dBmV
d
im
=
-
60 dB; note 8
66
-
-
dBmV
d
im
=
-
60 dB; note 9
63
-
-
dBmV
I
tot
total current
consumption (DC)
note 10
345
360
375
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2001 Nov 01
5
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
-
60
-
70
-
90
-
100
-
80
52
48
40
36
44
400
600
800
MCD976
(1)
(2)
(3)
(4)
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
-
60
-
70
-
90
-
100
-
80
52
48
40
36
44
400
600
800
MCD977
(1)
(2)
(3)
(4)
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
MCD978
(1)
(2)
(3)
(4)
Fig.4
Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
1000
-
50
-
60
-
70
-
80
-
90
-
100
54
50
46
42
38
34
200
400
CSO
(dB)
Vo
(dBmV)
f (MHz)
600
800
MCD979
(1)
(2)
(3)
(4)
Fig.5
Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
2001 Nov 01
6
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
handbook, halfpage
0
-
60
-
70
-
80
-
90
200
CTB
(dB)
48
44
40
36
Vo
(dBmV)
f (MHz)
1000
400
600
800
MCD980
(2)
(3)
(4)
(1)
Fig.6
Composite triple beat as a function of
frequency under flat conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs flat (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
-
60
-
70
-
80
-
90
200
Xmod
(dB)
48
44
40
36
Vo
(dBmV)
f (MHz)
1000
400
600
800
MCD981
(2)
(3)
(4)
(1)
Fig.7
Cross modulation as a function of frequency
under flat conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs flat (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
48
44
36
32
40
400
600
800
MCD982
(2)
(3)
(4)
(1)
Fig.8
Composite second order distortion (sum) as
a function of frequency under flat
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs flat (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
48
44
36
32
40
400
600
800
MCD983
(2)
(3)
(4)
(1)
Fig.9
Composite second order distortion (diff) as
a function of frequency under flat
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 79 chs flat (50 to 550 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
2001 Nov 01
7
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
-
40
-
50
-
70
-
80
-
60
52
48
40
36
44
400
600
800
MCD984
(1)
(2)
(3)
(4)
Fig.10 Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
MCD985
(1)
(2)
(3)
(4)
Fig.11 Cross modulation as a function of frequency
under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
MCD986
(1)
(2)
(3)
(4)
Fig.12 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
MCD987
(1)
(2)
(3)
(4)
Fig.13 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
2001 Nov 01
8
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
48
44
36
32
40
400
600
800
MCD988
(1)
(2)
(3)
(4)
Fig.14 Composite triple beat as a function of
frequency under flat conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs flat (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
-
60
-
70
-
90
-
100
-
80
48
44
36
32
40
400
600
800
MCD989
(1)
(2)
(3)
(4)
Fig.15 Cross modulation as a function of frequency
under flat conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs flat (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
48
44
36
32
40
400
600
800
MCD990
(1)
(2)
(3)
(4)
Fig.16 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs flat (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
48
44
36
32
40
400
600
800
MCD991
(2)
(1)
(3)
(4)
Fig.17 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 112 chs; flat (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
2001 Nov 01
9
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
-
40
-
50
-
70
-
80
-
60
52
48
40
36
44
400
600
800
MCD992
(1)
(2)
(3)
(4)
Fig.18 Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
52
48
40
36
44
400
600
800
MCD993
(1)
(2)
(3)
(4)
Fig.19 Cross modulation as a function of frequency
under tilted conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
40
-
50
-
70
-
80
-
60
52
48
40
36
44
400
600
800
MCD994
(1)
(2)
(3)
(4)
Fig.20 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
1000
-
40
-
50
-
60
-
70
-
80
-
90
52
48
44
40
36
32
200
400
CSO
(dB)
Vo
(dBmV)
f (MHz)
600
800
MCD995
(1)
(2)
(3)
(4)
Fig.21 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
2001 Nov 01
10
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
-
40
-
50
-
70
-
80
-
60
48
44
36
32
40
400
600
800
MCD996
(1)
(2)
(3)
(4)
Fig.22 Composite triple beat as a function of
frequency under flat conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs flat (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
-
60
-
70
-
90
-
100
-
80
48
44
36
32
40
400
600
800
MCD997
(1)
(2)
(3)
(4)
Fig.23 Cross modulation as a function of frequency
under flat conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs flat (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
50
-
60
-
80
-
90
-
70
48
44
36
32
40
400
600
800
MCD998
(1)
(2)
(3)
(4)
Fig.24 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs flat (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
-
40
-
50
-
70
-
80
-
60
48
44
36
32
40
400
600
800
MCD999
(1)
(2)
(3)
(4)
Fig.25 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
Z
S
= Z
L
= 75
; V
B
= 24 V; 132 chs flat (50 to 870 MHz).
(1) V
o
.
(2) Typ. +3
.
(3) Typ.
(4) Typ.
-
3
.
2001 Nov 01
11
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
PACKAGE OUTLINE
UNIT
A2
max.
c
e
e1
q
Q
max.
q1
q2
U1
max.
U2
W
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
20.8
9.1
0.51
0.38
0.25 27.2 2.54 13.75 2.54 5.08 12.7
8.8
4.15
3.85
2.4
38.1 25.4 10.2
4.2 44.75
8
0.25
0.1
3.8
b
F
p
6-32
UNC
y
w
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0
5
10 mm
scale
A
max.
D
max.
L
min.
E
max.
Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
U1
q
q2
q1
b
F
S
A
Z
p
E
A2
L
c
d
Q
U2
M
w
7
8
9
2
3
W
e
e1
5
p
1
d
max.
y
M
B
y
M
B
B
99-02-06
y
M
B
2001 Nov 01
12
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2001 Nov 01
13
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
NOTES
2001 Nov 01
14
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
NOTES
2001 Nov 01
15
Philips Semiconductors
Product specification
860 MHz, 20 dB gain power doubler amplifier
CGD914; CGD914MI
NOTES
Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
613518/06/pp
16
Date of release:
2001 Nov 01
Document order number:
9397 750 08861
Document Outline
- FEATURES
- PINNING
- APPLICATIONS
- DESCRIPTION
- QUICK REFERENCE DATA
- LIMITING VALUES
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
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