Электронный компонент: CGY2011G

Скачать:  PDF   ZIP

DATA SHEET

Objective specification
Supersedes data of 1995 Oct 25
File under Integrated Circuits, IC17

1996 Jul 08

INTEGRATED CIRCUITS

CGY2010G; CGY2011G
GSM 4 W power amplifiers

1996 Jul 08

2

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

FEATURES

�

Power Amplifier (PA) overall efficiency 45%

�

35.5 dB gain

�

0 dBm input power

�

Gain control range >55 dB

�

Integrated power sensor driver

�

Low output noise floor of PA <

-

129 dBm/Hz in GSM RX

band

�

Wide operating temperature range

-

20 to +85

�

C

�

LQFP 48 pin package

�

Compatible with power ramping controller PCA5075

�

Compatible with GSM RF transceiver SA1620.

APPLICATIONS

�

880 to 915 MHz hand-held transceivers for E-GSM
applications

�

900 MHz TDMA systems.

GENERAL DESCRIPTION

The CGY2010G and CGY2011G are GSM class 4 GaAs
Monolithic Microwave Integrated Circuits (MMICs) power
amplifiers specifically designed to operate at 4.8 V battery
supply. These ICs also include a power sensor driver so
that no directional coupler is required in the power control
loop.

Both ICs have the same performance but are issued from
different wafer fabs.

The PAs require only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
They can be switched off and their power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.

QUICK REFERENCE DATA

Note

1. For conditions, see Chapters "AC characteristics" and "DC characteristics".

ORDERING INFORMATION

SYMBOL

PARAMETER

(1)

MIN.

TYP.

MAX.

UNIT

V

DD

positive supply voltage

-

4.2

-

V

I

DD

positive peak supply current

-

1.8

-

A

P

out(max)

maximum output power

-

35.5

-

dBm

T

amb

operating ambient temperature

-

20

-

+85

C

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

CGY2010G

LQFP48

plastic low profile quad flat package; 48 leads; body 7

�

7

�

1.4 mm

SOT313-2

CGY2011G

1996 Jul 08

3

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

BLOCK DIAGRAM

PINNING

SYMBOL

PIN

DESCRIPTION

GND

1 to 5

ground

RFO/V

DD4

6 to 8

power amplifier output and fourth stage supply voltage

GND

9 to 17

ground

DETO/V

DD5

18

power sensor output and supply voltage

V

GG2

19

fourth stage negative gate supply voltage

GND

20 to 26

ground

RFI

27

power amplifier input

GND

28

ground

V

DD1

29

first stage supply voltage

GND

30

ground

V

GG1

31

first three stages negative gate supply voltage

GND

32

ground

V

DD2

33

second stage supply voltage

GND

34 to 41

ground

V

DD3

42

third stage supply voltage

GND

43 to 48

ground

Fig.1 Block diagram.

(1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.

handbook, full pagewidth

CGY2010G
CGY2011G

MGB761

(1)

31

19

18

6,7.8

29

33

42

27

GND

SENSOR

DRIVER

VGG1

VGG2

RFO/VDD4

VDD1

VDD2

VDD3

RFI

DETO/VDD5

1996 Jul 08

4

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

Fig.2 Pin configuration.

handbook, full pagewidth

1

2

3

4

5

6

7

8

9

10

11

36

35

34

33

32

31

30

29

28

27

26

13

14

15

16

17

18

19

20

21

22

23

48

47

46

45

44

43

42

41

40

39

38

12

24

37

25

CGY2010G
CGY2011G

MGB760

GND

GND

GND

VDD2

VGG1

GND

VDD1

GND

RFI

GND

GND

GND

GND

GND

GND

GND

RFO/VDD4

RFO/VDD4

GND

GND

GND

GND

GND

GND

GND

GND

GND

GND

V

DD3

GND

GND

GND

GND

GND

GND

RFO/VDD4

GND

GND

GND

GND

DETO/V

DD5

V

GG2

GND

GND

GND

GND

GND

GND

1996 Jul 08

5

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

FUNCTIONAL DESCRIPTION

Operating conditions

The CGY2010G and CGY2011G are designed to meet the
European Telecommunications Standards Institute (ETSI)
GSM documents, the

"ETS 300 577 specification", which

are defined as follows:

�

t

on

= 542.8

�

s

�

T = 4.3 ms

�

Duty cycle = 1/8

The devices are specifically designed for pulse operation
allowing the use of a LQFP48 plastic package.

Power amplifier

The power amplifier consists of four cascaded gain stages
with an open-drain configuration. Each drain has to be
loaded externally by an adequate reactive circuit which
also has to be a DC path to the supply.

The amplifier bias is set by means of a negative voltage
applied at pins V

GG1

and V

GG2

. This negative voltage must

be present before the supply voltage is applied to the
drains to avoid current overstress for the amplifier.

Power sensor driver

The power sensor driver is a buffer amplifier that delivers
a signal to the DETO output pin which is proportional to the
amplifier power. This signal can be detected by external
diodes for power control purpose. As the sensor signal is
taken from the input of the last stage of the PA, it is isolated
from disturbances at the output by the reverse isolation of
the PA output stage.

Impedance mismatch at the PA output therefore, does not
significantly influence the signal delivered by the power
sensor as this normally occurs when power sense is made
using a directional coupler. Consequently the cost and
space of using a directional coupler are saved.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.

THERMAL CHARACTERISTICS

General operating conditions applied.

Note

1. This thermal resistance is measured under GSM pulse conditions.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

V

DD

positive supply voltage

-

7

V

V

GG

negative supply voltage

-

-

10

V

T

j(max)

maximum operating junction temperature

-

150

�

C

T

stg

IC storage temperature

-

150

�

C

P

tot

total power dissipation

-

1.5

W

SYMBOL

PARAMETER

VALUE

UNIT

R

th j-c

thermal resistance from junction to case; note 1

32

K/W

1996 Jul 08

6

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

DC CHARACTERISTICS

V

DD

= 4.5 V; T

amb

= 25

�

C; general operating conditions applied; peak current values during burst; unless otherwise

specified.

Note

1. The negative bias V

GG1

and V

GG2

must be applied 10

�

s before the power amplifier is switched on, and must remain

applied until the power amplifier has been switched off.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Pins RFO/V

DD4,

V

DD3

, V

DD2

, V

DD1

and DETO/V

DD5

V

DD

positive supply voltage

0

4.2

5.5

V

I

DD

positive peak supply current

-

1.8

2.2

A

Pins V

GG1

and V

GG2

V

GG1

negative supply voltage

note 1

-

-

2

-

V

V

GG2

negative supply voltage

note 1

-

-

2

-

V

I

GG1

+ I

GG2

negative peak supply current

-

2.5

5

mA

1996 Jul 08

7

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

AC CHARACTERISTICS

V

DD

= 4.5 V; T

amb

= 25

�

C; general operating conditions applied; unless otherwise specified.

Notes

1. Including the 100

resistor connected in parallel at the power amplifier input on the evaluation board.

2. The device is adjusted to provide nominal value of load power into a 50

load. The device is switched off and a 6 : 1

load replaces the 50

load. The device is switched on and the phase of the 6 : 1 load is varied

360 electrical degrees during a 60 second period.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Power amplifier

P

in

input power

-

1.5

-

+1.5

dBm

S

11

input return loss

note 1; 50

source

-

-

-

6

dB

f

RF

RF frequency range

880

-

915

MHz

P

out(max)

maximum output power

T

amb

= 25

�

C; V

DD

= 4.5 V

34.5

35.5

-

dBm

T

amb

=

-

20 to +85

�

C; V

DD

= 4.2 V

32.5

-

-

dBm

efficiency

V

DD

= 4.2 V

-

45

-

%

P

out(min)

minimum output power

V

DD

< 0.1 V

-

-

-

20

dBm

N

RX

output noise in RX band

f

RF

= 925 MHz at P

out(max)

-

-

-

117

dBm/Hz

f

RF

= 935 MHz at P

out(max)

-

-

-

129

dBm/Hz

f

RF

= 960 MHz at P

out(max)

-

-

-

129

dBm/Hz

H2

2nd harmonic level

-

-

33

-

30

dBc

H3

3rd harmonic level

-

-

40

-

37

dBc

Stab

stability

note 2

-

-

-

70

dBc

Power sensor driver

P

out(DET)

sensor driver output
power

R

L

= 100

; relative to PA output

power into 50

load

-

-

23

-

dBc

P

out(DET)

driver output power
variation

load VSWR

<

6 : 1 at PA output

-

-

2

dB

1996 Jul 08

8

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

APPLICATION INFORMATION

Fig.3 Evaluation board schematic (FR4, 0.8 mm).

handbook, full pagewidth

1

2

3

4

5

6

7

8

9

10

11

48 47 46 45 44 43 42 41 40 39 38 37

12

MGB764

13 14 15 16 17 18 19 20 21 22 23 24

1 k

560

1 k

39 pF

39
pF

100

100

39

-

90

�

A

100 pF

100 pF

0.8 to 3 V

BSR14

10
nF

10
pF

33 pF

(1)

(4)

(1)

(1)

22

nH

TRL3

(2)

TRL1

PHP109

BAS70

BAS70

1 nF

10
pF

8

pF

1.25 V

PMOS

Ron

<

0.1

10 nH

1.5 pF

36

35

34

33

32

31

30

29

28

27

26

25

1

nF

27
pF

1

nF

10 pF

100 pF

X7R

DC output

Vdiode

Vcontrol

Vbat

+

4.8 V

Zc = 50

47

(3)

TRL2

100

PA

input

PA

output

-

2 V

CGY2010G
CGY2011G

VGG1

VGG2

RFO/VDD4

VDD1

VDD2

VDD3

RFI

DETO

(1) These capacitors are type: SMD0402; rest of the capacitors: SMD0603.

(2) TRL1: width: 0.3 mm; length: 16 mm.

(3) TRL2: width: 0.3 mm; length: 6.3 mm.

(4) TRL3: width: 0.3 mm; length: 20 mm.

1996 Jul 08

9

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

PACKAGE OUTLINE

UNIT

A

max.

A

1

A

2

A

3

b

p

c

E

(1)

e

H

E

L

L

p

Q

Z

y

w

v

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

mm

1.60

0.20
0.05

1.45
1.35

0.25

0.27
0.17

0.18
0.12

7.1
6.9

0.5

9.15
8.85

0.69
0.59

0.95
0.55

7
0

o

o

0.12

0.1

0.2

1.0

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

0.75
0.45

SOT313-2

93-06-15
94-12-19

D

(1)

(1)

(1)

7.1
6.9

H

D

9.15
8.85

E

Z

0.95
0.55

D

b

p

e

E

B

12

D

H

b

p

E

H

v

M

B

D

ZD

A

Z E

e

v

M

A

1

48

37

36

25

24

13

A

1

A

L

p

Q

detail X

L

(A )

3

A

2

X

y

c

w

M

w

M

0

2.5

5 mm

scale

pin 1 index

LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm

SOT313-2

1996 Jul 08

10

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

SOLDERING

Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"IC Package Databook" (order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all LQFP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250

�

C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45

�

C.

Wave soldering

Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

�

A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.

�

The footprint must be at an angle of 45

�

to the board

direction and must incorporate solder thieves
downstream and at the side corners.

Even with these conditions, do not consider wave
soldering LQFP packages LQFP48 (SOT313-2),
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260

�

C, and

maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150

�

C within

6 seconds. Typical dwell time is 4 seconds at 250

�

C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300

�

C. When

using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320

�

C.

1996 Jul 08

11

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Short-form specification

The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com/ps/

(1)

CGY2010G_2011G_2 June 26, 1996 11:51 am

Philips Semiconductors � a worldwide company

� Philips Electronics N.V. 1996

SCA50

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 83749, Fax. +31 40 27 88399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341

Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 926 5361, Fax. +7 095 564 8323

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 S�o Paulo, S�O PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849

Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745

Switzerland: Allmendstrasse 140, CH-8027 Z�RICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 G�LTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 708 296 8556

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 708 296 8556

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949

Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 615 800, Fax. +358 615 80920

France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Germany: Hammerbrookstra�e 69, D-20097 HAMBURG,
Tel. +49 40 23 52 60, Fax. +49 40 23 536 300

Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. +30 1 4894 339/911, Fax. +30 1 4814 240

Hungary: see Austria

India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722

Indonesia: see Singapore

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 648 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +1 800 234 7381, Fax. +1 708 296 8556

Middle East: see Italy

Printed in The Netherlands

647021/1200/02/pp12

Date of release: 1996 Jul 08

Document order number:

9397 750 00955

Document Outline

• FEATURES
• APPLICATIONS
• GENERAL DESCRIPTION
• QUICK REFERENCE DATA
• ORDERING INFORMATION
• BLOCK DIAGRAM
• PINNING
• FUNCTIONAL DESCRIPTION
  • Operating conditions
  • Power amplifier
  • Power sensor driver
• LIMITING VALUES
• THERMAL CHARACTERISTICS
• DC CHARACTERISTICS
• AC CHARACTERISTICS
• APPLICATION INFORMATION
• PACKAGE OUTLINE
  • SOT313-2
• SOLDERING
• DEFINITIONS
• LIFE SUPPORT APPLICATIONS