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2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

FEATURES

Operates at 3.6 V battery supply voltage

Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band

Input power: 5 dBm in GSM band and DCS/PCS band

Wide operating temperature range from
T

amb

20 to +85

HTSSOP20 exposed die pad package.

APPLICATIONS

Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.

GENERAL DESCRIPTION

The CGY2014ATW is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.

The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.

The voltages applied on pins V

(drain) control the power

of the power amplifier and enable it to be switched off.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

supply voltage

3.5

5.2

DD(LB)

GSM positive peak supply current

o(LB)(max)

maximum output power in GSM band

34.5

dBm

DD(HB)

DCS/PCS positive peak supply current

1.5

o(HB)(max)

maximum output power in DCS/PCS band

32.5

dBm

amb

ambient temperature

+85

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

CGY2014ATW

HTSSOP20

plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm

SOT527-1

2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

PINNING

SYMBOL

PIN

DESCRIPTION

n.c.

not connected

RFI(HB)

DCS/PCS power amplifier input

DD1(HB)

DCS/PCS first stage supply voltage

DD2(HB)

DCS/PCS second stage supply voltage

DD2(HB)

DCS/PCS second stage supply voltage

DD2(LB)

GSM second stage supply voltage

DD1(LB)

GSM first stage supply voltage

GND1(LB)

GSM first stage ground

RFI(LB)

GSM power amplifier input

n.c.

not connected

GLB

GSM power amplifier gates

n.c.

not connected

RFO/V

DD3(LB)

GSM power amplifier output and third stage supply voltage

RFO/V

DD3(LB)

GSM power amplifier output and third stage supply voltage

GND

ground

n.c.

internal connection to ground; pin should not be connected to the board

RFO/V

DD3(HB)

DCS/PCS power amplifier output and third stage supply voltage

RFO/V

DD3(HB)

DCS/PCS power amplifier output and third stage supply voltage

n.c.

not connected

GHB

DCS/PCS power amplifier gates

exposed die

ground

FUNCTIONAL DESCRIPTION

Operating conditions

The CGY2014ATW is designed to meet the European
Telecommunications Standards Institute (ETSI) GSM
documents, the

"ETS 300 577 specification", which are

defined as follows:

= 570

T = 4.16 ms

Duty cycle

Multislot operation can be implemented provided that the
application circuit does not drive the IC beyond the limiting
values.

Power amplifier

The GSM and DCS/PCS power amplifiers consist of three
cascaded gain stages with an open-drain configuration.
Each drain has to be loaded externally by an adequate
reactive circuit which also has to be a DC path to the
supply.

handbook, halfpage

FCA197

CGY2014ATW

n.c.

RFI(HB)

VDD1(HB)

VDD2(HB)

VDD2(LB)

VDD1(LB)

GND1(LB)

RFI(LB)

n.c.

VGHB

n.c.

RFO/VDD3(HB)

n.c.

GND

RFO/VDD3(LB)

n.c.

VGLB

Fig.2 Pin configuration.

2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. The total power dissipation is measured under GSM pulse conditions in a good thermal environment;

see

Application Note (tbf).

THERMAL CHARACTERISTICS

Note

1. This thermal resistance is measured under GSM pulse conditions in a good thermal environment;

see

Application Note (tbf).

DC CHARACTERISTICS
V

= 3.5 V; T

amb

= 25

C; measured on the Philips application diagram (see Fig.3); general operating conditions

applied; peak current values measured during burst; unless otherwise specified.

Notes

1. The supply circuit includes a (drain) MOS switch with R

DSon

= 40 m

. The battery voltage is 3.6 V (typical).

2. V

DD1(LB)

= 2.8 V; V

DD1(LB)

adjusted for P

o(LB)

= 15 dBm, this adjustment is typically 0.5V.

3. V

DD1(HB)

= 2.8 V; V

DD1(HB)

adjusted for P

o(HB)

= 15 dBm, this adjustment is typically 0.6V.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

supply voltage

5.2

j(max)

maximum operating junction temperature

150

stg

storage temperature

150

tot

total power dissipation

note 1

2.0

i(LB)

GSM input power

dBm

i(HB)

DCS/PCS input power

dBm

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

th(j-c)

thermal resistance from junction to case

note 1

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies: pins V

DD1(LB)

, V

DD2(LB)

, RFO/V

DD3(LB)

, V

DD1(HB)

, V

DD2(HB)

and RFO/V

DD3(HB)

supply voltage

note 1

3.5

5.2

DD(LB)

GSM positive peak supply current

i(LB)

= 5 dBm

DD(HB)

DCS/PCS positive peak supply current

i(HB)

= 5 dBm

1.5

DD(lp)(LB)

GSM positive supply current

note 2

200

300

DD(lp)(HB)

DCS/PCS positive supply current

note 3

200

300

2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

AC CHARACTERISTICS
V

DD1

= 2.8 V; V

DD2

= V

DD3

= 3.5 V; T

amb

= 25

C; measured on the Philips application diagram (see Fig.3).

Notes

1. The device is adjusted to provide nominal load power into a 50

load. The device is switched off and a 6 : 1 load

replaces the 50

load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees

during a 60 seconds test period.

2. The power amplifier can be matched to PCS and/or DCS/PCS operation through optimization of the matching circuit;

see

Application Note (tbf).

3. Isolation can be improved to

20 dBm (typical) with a pin diode switched in the DCS output matching circuit.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Low band: GSM power amplifier

i(LB)

input power

dBm

RF(LB)

RF frequency range

880

915

MHz

o(LB)(max)

maximum output power

34.5

dBm

efficiency

o(LB)(min)

minimum output power

= 0 V; P

i(LB)

= 5 dBm

dBm

RX(LB)

output noise in RX band

i(LB)

= 5 dBm

= 925 to 935 MHz

117

dBm/Hz

= 935 to 960 MHz

129

dBm/Hz

2nd harmonic level

i(LB)

= 5 dBm

dBc

3rd harmonic level

i(LB)

= 5 dBm

dBc

Stab

stability

i(LB)

= 5 dBm; note 1

dBc

High band: DCS/PCS power amplifier; note 2

i(HB)

input power

dBm

RF(HB)

RF frequency range

for DCS operation

1710

1785

MHz

o(HB)(max)

maximum output power

32.5

dBm

efficiency

o(HB)(min)

minimum output power

= 0 V; P

i(HB)

= 5 dBm

dBm

high band isolation when
low band is operating

DD(LB)

= 3.5 V; P

i(LB)

= 5 dBm;

DD(HB)

= 0 V; P

i(HB)

= 5 dBm;

note 3

dBm

RX(HB)

output noise in RX band

i(HB)

= 5 dBm

121

dBm/Hz

2nd harmonic level

i(HB)

= 5 dBm

dBc

3rd harmonic level

i(HB)

= 5 dBm

dBc

Stab

stability

i(HB)

= 5 dBm; note 1

dBc

2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

APPLICATION INFORMATION

handbook, full pagewidth

FCA203

CGY2014ATW

TRL2

TRL1

n.c.

TRL3

10 nF

3.9 nH

3.3 nH

100 pF

Vd23DCS

Vd1DCS

Vd1GSM

RFinGSM

RFI(LB)

RFinDCS

TRL9

100 pF

4.7 pF

3.3 pF

4 pF

TRL6

TRL10

TRL4

TRL5

56 pF

1 nF

4.7 pF

33 nF

220

9.1 pF

100 pF

3 pF

2.7 pF

1 pF

100 pF

n.c.

VGLB

n.c.

(1)

GND

RFI(HB)

VDD1(HB)

VDD2(HB)

VDD2(LB)

VDD1(LB)

RFO/VDD3(HB)

RFoutDCS

RFoutGSM

RFO/VDD3(HB)

RFO/VDD3(LB)

GND1(LB)

TRL7

TRL8

33 nF

220

VGHB

Vd23GSM

BA891

2.7 pF

optional circuit

5.6 pF

3.3 k

RFoutDCS

Vpin

Fig.3 Application diagram.

(1) Pin 16 is internally connected to ground and should not be connected to the board.

(2) Transmission lines:

Thickness 0.4 mm, substrate FR4 and

= 4.7.

TRL1: width = 500

m, length = 4.5 mm.

TRL2: width = 500

m, length = 15 mm, thickness = 1.6 mm.

TRL3: width = 300

m, length = 32 mm.

TRL4: width = 350

m, length = 4 mm.

TRL5: width = 800

m, length = 1.5 mm.

TRL6: width = 450

m, length = 13 mm.

TRL7: width = 500

m, length = 2.5 mm.

TRL8: width = 300

m, length = 2.5 mm.

TRL9: width = 800

m, length = 5 mm.

TRL10: width = 450

m, length = 2 mm.

2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

SOLDERING

Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"Data Handbook IC26; Integrated Circuit Packages"

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.

Typical reflow peak temperatures range from
215 to 250

C. The top-surface temperature of the

packages should preferable be kept below 220

C for

thick/large packages, and below 235

C for small/thin

packages.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

For packages with leads on two sides and a pitch (e):

larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

For packages with leads on four sides, the footprint must
be placed at a 45

angle to the transport direction of the

printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320

2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45

angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

PACKAGE

SOLDERING METHOD

WAVE

REFLOW

(1)

BGA, LFBGA, SQFP, TFBGA

not suitable

suitable

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS

not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO

not recommended

(5)

suitable

2000 Nov 28

Philips Semiconductors

Preliminary specification

GSM/DCS/PCS power amplifier

CGY2014ATW

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS

PRODUCT

STATUS

DEFINITIONS

(1)

Objective specification

Development

This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.

Preliminary specification

Qualification

This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

Product specification

Production

This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DEFINITIONS

Short-form specification

The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition

Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information

Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS

Life support applications

These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000

Philips Semiconductors a worldwide company

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905

Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553

Printed in The Netherlands

403506/01/pp

Date of release:

2000 Nov 28

Document order number:

9397 750 07456

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: CGY2014

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: CGY2014

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: CGY2014