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Электронный компонент: HEF4104BT

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DATA SHEET
Product specification
File under Integrated Circuits, IC04
January 1995
INTEGRATED CIRCUITS
HEF4104B
MSI
Quadruple low to high voltage
translator with 3-state outputs
For a complete data sheet, please also download:
The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
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January 1995
2
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
HEF4104B
MSI
DESCRIPTION
The HEF4104B quadruple low voltage to high voltage
translator with 3-state outputs provides the capability of
interfacing low voltage circuits to high voltage circuits,
such as low voltage LOCMOS and TTL to high voltage
LOCMOS. It has four data inputs (I
0
to I
3
), an active HIGH
output enable input (EO), four data outputs (O
0
to O
3
) and
their complements (O
0
to O
3
).
With EO HIGH, O
0
to O
3
and O
0
to O
3
are in the low
impedance ON-state, either HIGH or LOW as determined
by I
0
to I
3
; with EO LOW, O
0
to O
3
and O
0
to O
3
are in the
high impedance OFF-state.
The device uses a common negative supply (V
SS
) and
separate positive supplies for inputs (V
DDI
) and outputs
(V
DD0
). V
DDI
must always be less than or equal to V
DDO
,
even during power turn-on and turn-off. For the
permissible operating range of V
DDI
and V
DDO
see graph
Fig.4.
Each input protection circuit is terminated between
V
DDO
and V
SS
. This allows the input signals to be driven
from any potential between V
DDO
and V
SS
, without regard
to current limiting. When driving from potentials greater
than V
DDO
or less than V
SS
, the current at each input must
be limited to 10 mA.
Fig.1 Functional diagram.
PINNING
FAMILY DATA, I
DD
LIMITS category MSI
See Family Specifications
HEF4104BP(N):
16-lead DIL; plastic
(SOT38-1)
HEF4104BD(F):
16-lead DIL; ceramic (cerdip)
(SOT74)
HEF4104BT(D):
16-lead SO; plastic
(SOT109-1)
( ): Package Designator North America
I
0
to I
3
data inputs
EO
output enable input
O
0
to O
3
data outputs
O
0
to O
3
complementary data outputs
Fig.2 Pinning diagram.
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January 1995
3
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
HEF4104B
MSI
Fig.3 Logic diagram.
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January 1995
4
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
HEF4104B
MSI
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
C; C
L
= 50 pF; input transition times
20 ns
V
DD
V
SYMBOL
TYP.
MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
I
n
O
n
, O
n
5
170
340
ns
143 ns
+
(0,55 ns/pF) C
L
HIGH to LOW
10
t
PHL
80
160
ns
69 ns
+
(0,23 ns/pF) C
L
15
65
135
ns
57 ns
+
(0,16 ns/pF) C
L
5
170
340
ns
143 ns
+
(0,55 ns/pF) C
L
LOW to HIGH
10
t
PLH
80
160
ns
69 ns
+
(0,23 ns/pF) C
L
15
70
140
ns
62 ns
+
(0,16 ns/pF) C
L
Output transition times
5
60
120
ns
10 ns
+
(1,0 ns/pF) C
L
HIGH to LOW
10
t
THL
30
60
ns
9 ns
+
(0,42 ns/pF) C
L
15
20
40
ns
6 ns
+
(0,28 ns/pF) C
L
5
60
120
ns
10 ns
+
(1,0 ns/pF) C
L
LOW to HIGH
10
t
TLH
30
60
ns
9 ns
+
(0,42 ns/pF) C
L
15
20
40
ns
6 ns
+
(0,28 ns/pF) C
L
3-state propagation
delays
Output disable times
EO
O
n
, O
n
5
70
135
ns
HIGH
10
t
PHZ
55
110
ns
15
60
120
ns
5
70
135
ns
LOW
10
t
PLZ
55
105
ns
15
55
110
ns
Output enable times
EO
O
n
, O
n
5
195
395
ns
HIGH
10
t
PZH
95
195
ns
15
80
165
ns
5
195
395
ns
LOW
10
t
PZL
95
190
ns
15
80
160
ns
V
DD
V
TYPICAL FORMULA FOR P (
W)
Dynamic power
5
3 000 f
i
+
(f
o
C
L
)
V
DD
2
where
dissipation per
10
12 200 f
i
+
(f
o
C
L
)
V
DD
2
f
i
= input freq. (MHz)
package (P)
15
31 000 f
i
+
(f
o
C
L
)
V
DD
2
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)
background image
January 1995
5
Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
HEF4104B
MSI
Fig.4 V
DDO
as a function of V
DDI
; the shaded area shows the permissible operating range.