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Электронный компонент: JA101R

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DATA SHEET
Product specification
1999 May 31
DISCRETE SEMICONDUCTORS
BRY56A
Programmable unijunction
transistor
book, halfpage
M3D186
1999 May 31
2
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
DESCRIPTION
Planar PNPN trigger device in a
TO-92; SOT54 plastic package.
APPLICATIONS
Switching applications such as:
Motor control
Oscillators
Relay replacement
Timers
Pulse shapers, etc.
PINNING
PIN
DESCRIPTION
1
gate
2
anode
3
cathode
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
handbook, halfpage
MGL167
g
gate
k
cathode
anode
a
book, halfpage
1
3
2
MSB033
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
GA
gate-anode voltage
-
70
V
I
A(AV)
average anode current
-
175
mA
I
ARM
repetitive peak anode current
t
p
= 10
s;
= 0.01
-
2.5
A
I
ASM
non-repetitive peak anode current t
p
= 10
s
-
3
A
dl
A
/dt
rate of rise of anode current
I
A
2.5 A
-
20
A/
s
P
tot
total power dissipation
T
amb
75
C
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 May 31
3
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
P
peak point current
V
S
= 10 V; R
G
= 10 k
; see Fig.7
-
-
200
nA
V
S
= 10 V; R
G
= 100 k
; see Fig.7
-
-
60
nA
I
V
valley point current
V
S
= 10 V; R
G
= 10 k
; see Fig.7
2
-
-
A
V
S
= 10 V; R
G
= 100 k
; see Fig.7
1
-
-
A
V
offset
offset voltage
typical curve; I
A
= 0; see Fig.7
-
V
P
-
V
S
-
V
I
GAO
gate-anode leakage current
I
K
= 0; V
GA
= 70 V; see Fig.5
-
-
10
nA
I
GKS
gate-cathode leakage current V
AK
= 0; V
KG
= 70 V; see Fig.6
-
-
100
nA
V
AK
anode-cathode voltage
I
A
= 100 mA
-
-
1.4
V
V
OM
peak output voltage
V
AA
= 20 V; C = 10 nF;
see Figs 8 and 9
6
-
-
V
t
r
rise time
V
AA
= 20 V; C = 10 nF; see Fig.9
-
-
80
ns
Fig.2 Measuring circuit for peak and valley point currents.
I
P
and I
V
determined by value of R1.
; i.e. maximum voltage drop over R1 = 1 V.
Internal resistance of oscilloscope = 10 M
.
R1
1
I
A
----
=
handbook, full pagewidth
MBK189
40 K
R1
1 nF
20
10 k
5 k
100
F
+
40 V
BZY88-
C8V2
BY206
(2x)
750
D.U.T
osc.
RG
VS
A
1999 May 31
4
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
Fig.3 BRY56A with `program' resistors R1 and R2.
handbook, halfpage
DUT
R2
R1
+
VB
MEA141
Fig.4
Equivalent test circuit for characteristics
testing.
handbook, halfpage
MBB699
VAK
IA
DUT
VS =
R1
VB
R1 R2
R1 R2
R1 R2
RG =
Fig.5
Equivalent test circuit for gate-anode
leakage current.
handbook, halfpage
MBB697
VGA
DUT
I GAO
Fig.6
Equivalent test circuit for gate-cathode
leakage current.
handbook, halfpage
MBB696
VGK
DUT
I GKS
1999 May 31
5
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
Fig.7 Offset voltage.
handbook, halfpage
IA
I(V)
I(P)
VS V(P)
VAK
MEA143
Fig.8 Test circuit for peak output voltage.
handbook, halfpage
MBB698
DUT
27 k
20
1.5
M
16 k
VAA
VO
C
Fig.9 Peak output voltage.
handbook, halfpage
MBB701
tr
10 %
90 %
VO
VOM
time
1999 May 31
6
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
1999 May 31
7
Philips Semiconductors
Product specification
Programmable unijunction transistor
BRY56A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
65
Philips Semiconductors a worldwide company
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Printed in The Netherlands
115002/01/pp8
Date of release: 1999 May 31
Document order number:
9397 750 05969