1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
FEATURES
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATIONS
Common emitter, class AB amplifiers
in CW conditions for professional
applications between 1.5 GHz and
1.7 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with emitter
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
C in a common emitter class AB
amplifier.
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
G
po
(dB)
C
(%)
Z
i
/Z
L
(
)
Class AB (CW)
1.5
24
0.2
55
8
typ.50 see Figs 7
and 8
PINNING - SOT448A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
Fig.1 Simplified outline and symbol.
book, 4 columns
e
c
b
MAM045
1
2
Top view
3
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
45
V
V
CER
collector-emitter voltage
R
BE
= 56
-
30
V
V
CEO
collector-emitter voltage
open base
-
22
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
DC collector current
-
12
A
P
i
input power
f = 1.5 GHz; V
CE
= 24 V; class AB
-
20
W
P
tot
total power dissipation
T
mb
= 75
C
-
80
W
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
T
sld
soldering temperature
t
10 s; note 1
-
235
C
Fig.2 Power derating curve.
0
120
80
40
0
100
200
MBD390
Ptot
(W)
T ( C)
mb
o
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
THERMAL CHARACTERISTICS
Note
1. See
"Mounting recommendations in the General part of handbook SC19a".
CHARACTERISTICS
T
mb
= 25
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
C in a common emitter class AB amplifier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting base
T
j
= 100
C
1.2
K/W
R
th mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
-
6
mA
V
(BR)CER
collector-emitter breakdown voltage
I
C
= 30 mA; R
BE
= 56
30
-
V
V
(BR)CBO
collector-base breakdown voltage
I
C
= 30 mA
45
-
V
V
(BR)EBO
emitter-base breakdown voltage
I
E
= 30 mA
3
-
V
h
FE
DC current gain
I
C
= 1 A; V
CE
= 5 V
15
100
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
G
po
(dB)
C
(%)
Z
i
/Z
L
(
)
Class AB (CW)
1.5
24
0.2
55
typ. 60
8
typ. 8.5
typ. 50
see Figs 7
and 8
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LFE15600X
Fig.3 Prematching test circuit board.
The test circuit is split into 2 independent halves, each being 30
40 mm in size.
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
2.0
4.0
6.5
3.0
9.0
0.635
4.0
10.0
MBD396
30 mm
40 mm
30 mm
40 mm
4.0
7.0
17.5
0.635
1.0
1.0
MBD397
VBB
VCC
C5
C6
L1
L2
C2
C3
C4
C1
output
input
F1
rivet
C7
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