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Электронный компонент: LWE2010S

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DATA SHEET
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 19
DISCRETE SEMICONDUCTORS
LWE2010S
NPN microwave power transistor
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
FEATURES
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common emitter class A power
amplifiers at frequencies up to
2.3 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT446A metal ceramic flange
package, with emitter connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
C in a common emitter class A
selective amplifier.
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
G
po
(dB)
Z
I
/Z
L
(
)
class A (CW)
2.3
18
110
0.8
8
see Figs 6
and 7
PINNING - SOT446A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM313
e
c
b
1
2
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.1 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CER
collector-emitter voltage
R
BE
= 250
-
20
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
collector current (DC)
-
250
mA
P
tot
total power dissipation
T
mb
= 75
C
-
4.8
W
T
stg
storage temperature
-
65
+200
C
T
j
operating junction temperature
-
200
C
T
sld
soldering temperature
t
10 s; note 1
-
235
C
Fig.2 DC SOAR.
T
mb
75
C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
250
.
handbook, halfpage
10
2
MGA250
10
VCE (V)
1
IC
(A)
(1)
(2)
1
10
-
1
10
-
2
Fig.3
Maximum power dissipation derating as a
function of mounting base temperature.
P
tot max
= 4.8 W.
handbook, halfpage
6
4
2
0
MGA249
-
50
50
Ptot
(W)
150
Tmb (
o
C)
250
0
100
200
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
THERMAL CHARACTERISTICS
Note
1. See "
Mounting recommendations in the General part of handbook SC15".
CHARACTERISTICS
T
mb
= 25
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
C in a common emitter class A selective amplifier.
Note
1. In narrowband test circuit shown in Fig.4.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting base T
j
= 75
C
22
K/W
R
th mb-h
thermal resistance from mounting base to heatsink note 1
2
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
-
75
A
V
CB
= 40 V; I
E
= 0
-
500
A
I
EBO
emitter cut-off current
V
EB
= 1.5 V; I
C
= 0
-
200
nA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 110 mA
15
150
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
G
po
(dB)
Z
I
(
)
Z
L
(
)
Class A (CW); note 1
2.3
18
110
0.8;
typ. 0.9
8;
typ. 9
5.2 + j 16.5
7.5 + j 8.75
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
Fig.4 Prematching test circuit board.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
handbook, full pagewidth
MBC717
30 mm
40 mm
30 mm
40 mm
1
5
2.5 (3x)
4.5
8.5
0.6
9
4
3
3
4.5
3
1
10
5
5
3
handbook, full pagewidth
MBC718
output
input
L1
C3
C4
L2
C1
C2