DATA SHEET
Product specification
Supersedes data of June 1992
1997 Feb 20
DISCRETE SEMICONDUCTORS
MX0912B100Y; MZ0912B100Y
NPN microwave power transistors
1997 Feb 20
2
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and low
thermal resistance
Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
Fig.1 Simplified outline and symbol (SOT439A).
olumns
e
c
b
MAM045
1
2
Top view
3
3
Fig.2 Simplified outline and symbol (SOT443A).
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
Microwave performance at T
mb
25
C in a common base class-C broadband amplifier.
MODE OF OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
P
(dB)
C
(%)
Z
i
; Z
L
(
)
Class-C; t
p
= 10
s;
= 10 %
0.960 to 1.215
50
>100
>7
>42
see Figs 8 and 9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 20
3
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
65
V
V
CES
collector-emitter voltage
R
BE
= 0
-
60
V
V
CEO
collector-emitter voltage
open base
-
20
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
collector current (DC)
t
p
10
s;
10 %
-
6
A
P
tot
total power dissipation
(peak power)
t
p
10
s;
10 %;
T
mb
= 75
C
-
290
W
T
stg
storage temperature
-
65
+200
C
T
j
operating junction temperature
-
200
C
T
sld
soldering temperature
up to 0.2 mm from ceramic;
t
10 s
-
235
C
Fig.3
Maximum power dissipation derating as a
function of mounting-base temperature.
t
p
= 10
s;
= 10 %; P
tot max
= 290 W.
handbook, halfpage
-
50
200
300
0
100
200
0
Ptot
(W)
100
Tmb (
C)
MGL046
1997 Feb 20
4
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
THERMAL CHARACTERISTICS
Notes
1. See "
Mounting recommendations in the General part of handbook SC19a".
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
mb
= 25
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
C measured in the test jig as shown in Fig.7 and working in class C broadband
in pulse mode; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V
CC
during pulse.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting-base T
j
= 125
C
3.2
K/W
R
th mb-h
thermal resistance from mounting-base to heatsink T
j
= 125
C; note 1
0.2
K/W
Z
th j
-
h
thermal impedance from junction to heatsink
t
p
= 10
s;
= 10 %;
T
j
= 125
C; notes 1 and 2
0.43
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 65 V; I
E
= 0
40
mA
V
CB
= 50 V; I
E
= 0
4
mA
I
CES
collector cut-off current
V
CB
= 60 V; R
BE
= 0
40
mA
I
EBO
emitter cut-off current
V
EB
= 1.5 V; I
C
= 0
400
A
MODE OF OPERATION
f
(GHz)
V
CC
(V)
(2)
P
L
(W)
G
p
(dB)
C
(%)
Z
i
/Z
L
(
)
Class C;
t
p
= 10
s;
= 10%
0.960 to 1.215
50
100
typ. 115
7
typ. 7.6
42
typ. 44
see Figs 8 and 9
t
p
= 300
s;
= 10%;
see Fig.6
1.03 to 1.09
50
typ. 125
typ. 8
typ. 50
1997 Feb 20
5
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
Fig.4
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.7)
V
CC
= 50 V; t
p
= 10
s;
= 10%.
handbook, halfpage
0.95
1.05
1.15
1.25
f (GHz)
PL
(W)
130
110
120
MGL047
Fig.5
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.7)
V
CC
= 50 V; t
p
= 10
s;
= 10%.
handbook, halfpage
0.95
1.05
1.15
1.25
f (GHz)
C
(%)
50
40
45
MGL048
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