Document Outline
- DESCRIPTION
- FEATURES
- APPLICATIONS
- PIN CONFIGURATION
- PIN DESIGNATION
- ORDERING INFORMATION
- CIRCUIT SCHEMATIC
- CONNECTION DIAGRAM
- ABSOLUTE MAXIMUM RATINGS
- DC ELECTRICAL CHARACTERISTICS 1
- TYPICAL PERFORMANCE CHARACTERISTICS
- APPLICATIONS
- CIRCUIT DESCRIPTION
- APPLICATIONS
- APPLICATION HINTS
- PACKAGE OUTLINE
- REVISION HISTORY
- Data sheet status
- Definitions
- Disclaimers
Philips
Semiconductors
NE5517/NE5517A/AU5517
Dual operational transconductance
amplifier
Product data
Replaces NE5517/NE5517A dated 2001 Aug 03
2002 Dec 06
INTEGRATED CIRCUITS
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2
2002 Dec 06
DESCRIPTION
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
Constant impedance buffers on the chip allow general use of the
AU5517/NE5517. These buffers are made of Darlington transistors
and a biasing network that virtually eliminate the change of offset
voltage due to a burst in the bias current I
ABC
, hence eliminating the
audible noise that could otherwise be heard in high quality audio
applications.
FEATURES
Constant impedance buffers
V
BE
of buffer is constant with amplifier I
BIAS
change
Excellent matching between amplifiers
Linearizing diodes
High output signal-to-noise ratio
APPLICATIONS
Multiplexers
Timers
Electronic music synthesizers
Dolby
TM
HX Systems
Current-controlled amplifiers, filters
Current-controlled oscillators, impedances
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
IABCa
Da
+INa
INa
VOa
V
INBUFFERa
VOBUFFERa
IABCb
Db
+INb
INb
VOb
V+
INBUFFERb
VOBUFFERb
N, D Packages
Top View
SL00306
Figure 1. Pin Configuration
PIN DESIGNATION
PIN NO.
SYMBOL
NAME AND FUNCTION
1
I
ABCa
Amplifier bias input A
2
D
a
Diode bias A
3
+IN
a
Non-inverting input A
4
IN
a
Inverting input A
5
V
Oa
Output A
6
V
Negative supply
7
IN
BUFFERa
Buffer input A
8
VO
BUFFERa
Buffer output A
9
VO
BUFFERb
Buffer output B
10
IN
BUFFERb
Buffer input B
11
V+
Positive supply
12
V
Ob
Output B
13
IN
b
Inverting input B
14
+IN
b
Non-inverting input B
15
D
b
Diode bias B
16
I
ABCb
Amplifier bias input B
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
16-Pin Plastic Dual In-Line Package (DIP)
0 to +70
C
NE5517N
SOT38-4
16-Pin Plastic Dual In-Line Package (DIP)
0 to +70
C
NE5517AN
SOT38-4
16-Pin Small Outline (SO) Package
0 to +70
C
NE5517D
SOT109-1
16-Pin Small Outline (SO) Package
40 to +125
C
AU5517D
SOT109-1
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
3
CIRCUIT SCHEMATIC
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
INPUT
4,13
+INPUT
3,14
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V
6
Q10
D6
Q11
VOUTPUT
5,12
Q9
Q8
D5
Q14
Q15
Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
SL00307
Figure 2. Circuit Schematic
CONNECTION DIAGRAM
NOTE:
1. V+ of output buffers and amplifiers are internally connected.
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
()
B
OUTPUT
V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
AMP
BIAS
INPUT
DIODE
BIAS
INPUT
(+)
INPUT
()
OUTPUT
V
BUFFER
INPUT
BUFFER
OUTPUT
A
A
A
A
A
A
A
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
+
B
+
A
SL00308
Figure 3. Connection Diagram
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
4
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
V
S
Supply voltage
1
44 V
DC
or
22
V
P
D
Power dissipation,
T
amb
= 25
C (still air)
2
NE5517N, NE5517AN
1500
mW
NE5517D, AU5517D
1125
mW
V
IN
Differential input voltage
5
V
I
D
Diode bias current
2
mA
I
ABC
Amplifier bias current
2
mA
I
SC
Output short-circuit duration
Indefinite
I
OUT
Buffer output current
3
20
mA
T
amb
Operating temperature range
NE5517N, NE5517AN
0
C to +70
C
C
AU5517D
40
C to +125
C
C
V
DC
DC input voltage
+V
S
to V
S
T
stg
Storage temperature range
65
C to +150
C
C
T
sld
Lead soldering temperature (10 sec max)
230
C
NOTES:
1. For selections to a supply voltage above
22 V, contact factory
2. The following derating factors should be applied above 25
C
N package at 12.0 mW/
C
D package at 9.0 mW/
C
3. Buffer output current should be limited so as to not exceed package dissipation.
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
5
DC ELECTRICAL CHARACTERISTICS
1
SYMBOL
PARAMETER
TEST CONDITIONS
AU5517/NE5517
NE5517A
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
0.4
5
0.4
2
mV
V
OS
Input offset voltage
Over temperature range
5
mV
I
ABC
5
A
0.3
5
0.3
2
mV
V
OS
/
T
Avg. TC of input offset voltage
7
7
V/
C
V
OS
including diodes
Diode bias current (I
D
) = 500
A
0.5
5
0.5
2
mV
V
OS
Input offset change
5
A
I
ABC
500
A
0.1
0.1
3
mV
I
OS
Input offset current
0.1
0.6
0.1
0.6
A
I
OS
/
T
Avg. TC of input offset current
0.001
0.001
A/
C
I
BIAS
Input bias current
0.4
5
0.4
5
A
I
BIAS
In ut bias current
Over temperature range
1
8
1
7
A
I
B
/
T
Avg. TC of input current
0.01
0.01
A/
C
g
M
Forward transconductance
6700
9600
1300
7700
9600
1200
mho
g
M
Forward transconductance
Over temperature range
5400
4000
mho
g
M
tracking
0.3
0.3
dB
R
L
= 0, I
ABC
=5
A
5
3
5
7
A
I
OUT
Peak output current
R
L
= 0, I
ABC
= 500
A
350
500
650
350
500
650
A
R
L
= 0
300
300
A
Peak output voltage
V
OUT
Positive
R
L
=
, 5
A
I
ABC
500
A
+12
+14.2
+12
+14.2
V
Negative
R
L
=
, 5
A
I
ABC
500
A
12
14.4
12
14.4
V
I
CC
Supply current
I
ABC
= 500
A, both channels
2.6
4
2.6
4
mA
V
OS
sensitivity
Positive
V
OS
/
V+
20
150
20
150
V/V
Negative
V
OS
/
V
20
150
20
150
V/V
CMRR
Common-mode rejection
ration
80
110
80
110
dB
Common-mode range
12
13.5
12
13.5
V
Crosstalk
Referred to input
2
20 Hz < f < 20 kHz
100
100
dB
I
IN
Differential input current
I
ABC
= 0, input =
4 V
0.02
100
0.02
10
nA
Leakage current
I
ABC
= 0 (Refer to test circuit)
0.2
100
0.2
5
nA
R
IN
Input resistance
10
26
10
26
k
B
W
Open-loop bandwidth
2
2
MHz
SR
Slew rate
Unity gain compensated
50
50
V/
s
IN
BUFFER
Buffer input current
5
0.4
5
0.4
5
A
VO
BUFFER
Peak buffer output voltage
5
10
10
V
V
BE
of buffer
Refer to Buffer V
BE
test circuit
3
0.5
5
0.5
5
mV
NOTES:
1. These specifications apply for V
S
=
15 V, T
amb
= 25
C, amplifier bias current (I
ABC
) = 500
A, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
2. These specifications apply for V
S
=
15 V, I
ABC
= 500
A, R
OUT
= 5 k
connected from the buffer output to V
S
and the input of the buffer is
connected to the transconductance amplifier output.
3. V
S
=
15, R
OUT
= 5 k
connected from Buffer output to V
S
and 5
A
I
ABC
500
A.
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
6
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT
VCMR
VOUT
10
10
10
10
1
PEAK OUTPUT CURRENT (
A)
0.1
A 1
A
10
A
100
A
1000
A
AMPLIFIER BIAS CURRENT (IABC)
VS =
15V
+125
C
4
3
2
+25
C
-55
C
Peak Output Current
10
10
10
10
10
4
3
2
5
-50
C -25
C
0
C 25
C 50
C 75
C100
C125
C
Leakage Current
0V
(+)VIN = ()VIN = VOUT = 36V
LEAKAGE CURRENT (pA)
AMBIENT TEMPERATURE (TA)
10
10
10
10
10
TRANSCONDUCT
ANCE (gM) -- ( ohm)
4
3
2
0.1
A 1
A
10
A
100
A
1000
A
AMPLIFIER BIAS CURRENT (IABC)
VS =
15V
+125
C
+25
C
-55
C
Transconductance
5
gM
mq
m
M
PINS 2, 15
OPEN
10
10
1
0.1
0.01
INPUT
RESIST
ANCE (MEG )
1
2
0.1
A 1
A
10
A
100
A
1000
A
AMPLIFIER BIAS CURRENT (IABC)
Input Resistance
PINS 2, 15
OPEN
10
10
10
10
1
INPUT LEAKAGE CURRENT (pA)
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125
C
+25
C
Input Leakage
0
1
2
3
4
5
6
7
10
10
10
10
1
INPUT BIAS CURRENT (nA)
3
4
0.1
A 1
A
10
A
100
A
1000
A
AMPLIFIER BIAS CURRENT (IABC)
Input Bias Current
VS =
15V
+125
C
+25
C
-55
C
2
10
10
10
1
0.1
INPUT OFFSET CURRENT (nA)
2
3
0.1
A
1
A
10
A
100
A
1000
A
AMPLIFIER BIAS CURRENT (IABC)
Input Bias Current
VS =
15V
+125
C
+25
C
-55
C
5
INPUT OFFSET VOL
T
AGE
(mV)
0.1
A 1
A
10
A
100
A
1000
A
AMPLIFIER BIAS CURRENT (IABC)
Input Offset Voltage
VS =
15V
+125
C
+25
C
-55
C
+125
C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
PEAK OUTPUT VOL
T
AGE
AND
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.1
A 1
A
10
A
100
A
1000
A
AMPLIFIER BIAS CURRENT (IABC)
Peak Output Voltage and
Common-Mode Range
VS =
15V
Tamb = 25
C
VCMR
RLOAD =
COMMON-MODE RANGE (V)
SL00309
Figure 4. Typical Performance Characteristics
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
7
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1 VOL
T RMS (dB)
20
0
-20
-40
-60
-80
-100
OUTPUT VOL
T
AGE RELA
TIVE
T
O
0.1
A 1
A
10
A
100
A
1000
A
IABC AMPLIFIER BIAS CURRENT (
A)
VS =
15V
RL = 10k
OUTPUT NOISE
20kHz BW
VIN = 40mVP-P
VIN = 80mVP-P
VS =
15V
Tamb = +25
C
CIN
COUT
7
6
5
4
3
2
1
0
0.1
A 1
A
10
A
100
A
1000
A
CAP
ACIT
ANCE (pF)
AMPLIFIER BIAS CURRENT (IABC)
0.1
A
1
A
10
A
100
A
1000
A
2000
1800
1600
1400
1200
1000
800
600
400
200
0
AMPLIFIER BIAS VOL
T
AGE
(mV)
AMPLIFIER BIAS CURRENT (IABC)
-55
C
+25
C
+125
C
OUTPUT DIST
ORTION
(%)
100
10
1
0.1
0.01
1
10
100
1000
DIFFERENTIAL INPUT VOLTAGE (mVP-P)
600
500
400
300
200
100
0
10
100
1k
10k
100k
OUTPUT NOISE CURRENT (pA/Hz)
FREQUENCY (Hz)
IABC = 1mA
IABC = 100
A
Amplifier Bias Voltage vs
Amplifier Bias Current
Input and Output Capacitance
Distortion vs Differential
Input Voltage
Voltage vs Amplifier Bias Current
Noise vs Frequency
IABC = 1mA
RL = 10k
SL00310
Figure 5. Typical Performance Characteristics (cont.)
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
8
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Leakage Current Test Circuit
Differential Input Current Test Circuit
Buffer V
BE
Test Circuit
4, 13
2, 15
3, 14
+
NE5517
11
6
1, 15
5, 12
7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
+
NE5517
11
6
1, 10
5, 12
A
+15V
15V
4V
V
V+
50k
V
SL00311
Figure 6. Typical Performance Characteristics (cont.)
APPLICATIONS
4, 13
2, 15
3, 14
+
NE5517
11
6
5, 12
1, 16
+15V
15V
7, 10
8, 9
INPUT
OUTPUT
5k
390pF
10k
1.3k
10k
62k
15V
51
0.01
F
0.001
F
0.01
F
Unity Gain Follower
SL00312
Figure 7. Applications
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
9
CIRCUIT DESCRIPTION
The circuit schematic diagram of one-half of the AU5517/NE5517, a
dual operational transconductance amplifier with linearizing diodes
and impedance buffers, is shown in Figure 8.
1. Transconductance Amplifier
The transistor pair, Q
4
and Q
5
, forms a transconductance stage. The
ratio of their collector currents (I
4
and I
5
, respectively) is defined by
the differential input voltage, V
IN
, which is shown in equation 1.
V
IN
+
KT
q
In
I
5
I
4
(1)
Where V
IN
is the difference of the two input voltages
KT
26 mV at room temperature (300
k).
Transistors Q
1
, Q
2
and diode D
1
form a current mirror which focuses
the sum of current I
4
and I
5
to be equal to amplifier bias current I
B
:
I
4
+ I
5
= I
B
(2)
If V
IN
is small, the ratio of I
5
and I
4
will approach unity and the Taylor
series of In function can be approximated as
KT
q
In
I
5
I
4
[
KT
q
I
5
*
I
4
I
4
(3)
and I
4
I
5
I
B
KT
q In
I
5
I
4
[
KT
q
I
5
*
I
4
1 2I
B
+
2KT
q
I
5
*
I
4
I
B
+
V
IN
(4)
I
5
*
I
4
+
V
IN
I
B
q
2KT
The remaining transistors (Q
6
to Q
11
) and diodes (D
4
to D
6
) form
three current mirrors that produce an output current equal to I
5
minus I
4
. Thus:
V
IN
I
B
q
2KT
+
I
O
(5)
The term
I
B
q
2KT
is then the transconductance of the amplifier and is
proportional to I
B
.
2. Linearizing Diodes
For V
IN
greater than a few millivolts, equation 3 becomes invalid and
the transconductance increases non-linearly. Figure 9 shows how
the internal diodes can linearize the transfer function of the
operational amplifier. Assume D
2
and D
3
are biased with current
sources and the input signal current is I
S
. Since
I
4
+ I
5
= I
B
and I
5
I
4
= I
0
, that is:
I
4
= (I
B
I
0
), I
5
= (I
B
+ I
0
)
For the diodes and the input transistors that have identical
geometries and are subject to similar voltages and temperatures,
the following equation is true:
T
q In
I
D
2
)
I
S
I
D
2
*
I
S
+
KT
q
In
1 2(I
B
)
I
O
)
1 2(I
B
*
I
O
)
(6)
I
O
+
I
S
2
I
B
I
D
for |I
S
|
t
I
D
2
The only limitation is that the signal current should not exceed I
D
.
3. Impedance Buffer
The upper limit of transconductance is defined by the maximum
value of I
B
(2 mA). The lowest value of I
B
for which the amplifier will
function therefore determines the overall dynamic range. At low
values of I
B
, a buffer with very low input bias current is desired. A
Darlington amplifier with constant-current source (Q
14
, Q
15
, Q
16
, D
7
,
D
8
, and R
1
) suits the need.
APPLICATIONS
Voltage-Controlled Amplifier
In Figure 10, the voltage divider R
2
, R
3
divides the input-voltage into
small values (mV range) so the amplifier operates in a linear
manner.
It is:
I
OUT
+ *
V
IN
@
R
3
R
2
)
R
3
@
gM;
V
OUT
+
I
OUT
@
R
L
;
A
+
V
OUT
V
IN
+
R
3
R
2
)
R
3
@
gM
@
R
L
(3) g
M
= 19.2 I
ABC
(g
M
in
mhos for I
ABC
in mA)
Since g
M
is directly proportional to I
ABC
, the amplification is
controlled by the voltage V
C
in a simple way.
When V
C
is taken relative to V
CC
the following formula is valid:
I
ABC
+
(V
C
*
1.2V)
R
1
The 1.2 V is the voltage across two base-emitter baths in the current
mirrors. This circuit is the base for many applications of the
AU5517/NE5517.
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
10
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
INPUT
4,13
+INPUT
3,14
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V
6
Q10
D6
Q11
VOUTPUT
5,12
Q9
Q8
D5
Q14
Q15
Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
SL00313
Figure 8. Circuit Diagram of NE5517
+VS
ID
IB
I5
Q4
1/2ID
IS
IS
1/2ID
VS
I4
I5
D3
D2
I
D
2
*
I
S
I
D
2
)
I
S
I
0
+
I
5
*
I
4
I
0
+
2 I
S
I
B
I
D
SL00314
Figure 9. Linearizing Diode
Stereo Amplifier With Gain Control
Figure 11 shows a stereo amplifier with variable gain via a control
input. Excellent tracking of typical 0.3 dB is easy to achieve. With
the potentiometer, R
P
, the offset can be adjusted. For AC-coupled
amplifiers, the potentiometer may be replaced with two 510
resistors.
Modulators
Because the transconductance of an OTA (Operational
Transconductance Amplifier) is directly proportional to I
ABC
, the
amplification of a signal can be controlled easily. The output current
is the product from transconductance
input voltage. The circuit is
effective up to approximately 200 kHz. Modulation of 99% is easy to
achieve.
Voltage-Controlled Resistor (VCR)
Because an OTA is capable of producing an output current
proportional to the input voltage, a voltage variable resistor can be
made. Figure 13 shows how this is done. A voltage presented at the
R
X
terminals forces a voltage at the input. This voltage is multiplied
by g
M
and thereby forces a current through the R
X
terminals:
R
X
=
R
)
R
A
gM
)
R
A
where g
M
is approximately 19.21
MHOs at room temperature.
Figure 14 shows a Voltage Controlled Resistor using linearizing
diodes. This improves the noise performance of the resistor.
Voltage-Controlled Filters
Figure 15 shows a Voltage Controlled Low-Pass Filter. The circuit is
a unity gain buffer until X
C
/g
M
is equal to R/R
A
. Then, the frequency
response rolls off at a 6dB per octave with the 3 dB point being
defined by the given equations. Operating in the same manner, a
Voltage Controlled High-Pass Filter is shown in Figure 16. Higher
order filters can be made using additional amplifiers as shown in
Figures 17 and 18.
Voltage-Controlled Oscillators
Figure 19 shows a voltage-controlled triangle-square wave
generator. With the indicated values a range from 2 Hz to 200 kHz is
possible by varying I
ABC
from 1 mA to 10
A.
The output amplitude is determined by I
OUT
R
OUT
.
Please notice the differential input voltage is not allowed to be above
5 V.
With a slight modification of this circuit you can get the sawtooth
pulse generator, as shown in Figure 20.
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
11
APPLICATION HINTS
To hold the transconductance g
M
within the linear range, I
ABC
should be chosen not greater than 1 mA. The current mirror ratio
should be as accurate as possible over the entire current range. A
current mirror with only two transistors is not recommended. A
suitable current mirror can be built with a PNP transistor array which
causes excellent matching and thermal coupling among the
transistors. The output current range of the DAC normally reaches
from 0 to 2 mA. In this application, however, the current range is
set through R
REF
(10 k
) to 0 to 1 mA.
I
DACMAX
+
2
@
V
REF
R
REF
+
2
@
5V
10k
W +
1mA
4
6
3
+
NE5517
5
11
1
7
8
VIN
R4 = R2/ /R3
+VCC
VC
R2
R3
R1
RL
RS
+VCC
INT
VOUT
VCC
IOUT
IABC
TYPICAL VALUES: R1 = 47k
R2 = 10k
R3 = 200
R4 = 200
RL = 100k
RS = 47k
INT
SL00315
Figure 10.
4
3
+
NE5517/A
11
+VCC
8
VOUT1
VCC
13
6
14
+
NE5517/A
9
VC
RS
VOUT2
VCC
VIN1
VIN2
30k
10k
10k
RIN
RIN
RP
+VCC
RD
15k
1
16
12
10k
RL
5.1k
+VCC
INT
INT
+VCC
10k
RL
10
IABC
IABC
15
15k
RP
+VCC
RD
1k
RC
1k
SL00316
Figure 11. Gain-Controlled Stereo Amplifier
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
12
VCC
4
6
3
+
NE5517/A
8
RS
VOUT
VCC
VIN1
10k
1
11
+VCC
10k
RL
5
ID
2
15k
RC
VIN2
1k
SIGNAL
30k
IABC
7
CARRIER
INT
INT
+VCC
VOS
SL00317
Figure 12. Amplitude Modulator
VCC
4
3
+
NE5517/A
8
VOUT
VCC
11
+VCC
RX
5
IO
2
R
30k
7
INT
INT
C
200
200
+VCC
100k
10k
VC
R
X
+
R
)
R
A
g
M
@
R
A
SL00318
Figure 13. VCR
VCC
4
3
NE5517/A
8
VCC
11
+VCC
RX
5
ID
2
R
30k
7
INT
INT
C
+VCC
100k
10k
VC
+VCC
VOS
RP
1k
1
6
SL00319
Figure 14. VCR with Linearizing Diodes
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
13
f
O
+
R
A
g
M
g(R
)
RA) 2
p
C
NOTE:
VCC
4
3
+
NE5517/A
8
VOUT
VCC
11
+VCC
5
IABC
2
R
30k
7
INT
INT
C
200
+VCC
100k
10k
VC
RA
1
150pF
6
200
100k
VIN
SL00320
Figure 15. Voltage-Controlled Low-Pass Filter
f
O
+
R
A
g
M
g(R
)
RA) 2
p
C
NOTE:
VCC
4
3
+
NE5517/A
8
VOUT
VCC
11
+VCC
5
IABC
2
R
30k
7
INT
INT
C
1k
+VCC
100k
10k
VC
RA
1
6
1k
100k
VOS
NULL
+VCC
-VCC
0.005
F
SL00321
Figure 16. Voltage-Controlled High-Pass Filter
NOTE:
f
O
+
R
A
g
M
(R
)
R
A
) 2
p
C
+VCC
+
NE5517/A
VOUT
VCC
+VCC
15k
INT
INT
10k
VC
RA
200
200pF
2C
+
NE5517/A
+VCC
RA
100k
200
R
100k
10k
C
VCC
100pF
100k
-VCC
VIN
200
RA
200
SL00322
Figure 17. Butterworth Filter 2nd Order
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
14
+VCC
+
NE5517/A
VOUT
VCC
+VCC
15k
INT
INT
5.1k
VC
800pF
+
NE5517/A
+VCC
20k
5.1k
VCC
800pF
VCC
10k
6
11
3
2
1k
1
5
7
20k
1k
13
15
14
12
10
16
LOW
PASS
9
20k
BANDPASS OUT
SL00323
Figure 18. State Variable Filter
+VCC
+
NE5517/A
VOUT2
VCC
+VCC
INT
INT
10k
+
NE5517/A
+VCC
20k
VCC
VCC
6
11
4
3
5
7
14
13
12
10
VOUT1
GAIN
CONTROL
1
16
47k
VC
30k
C
0.1
F
8
INT
+VCC
9
SL00324
Figure 19. Triangle-Square Wave Generator (VCO)
IB
NOTE:
V
PK
+
(V
C
*
0.8) R
1
R
1
)
R
2
T
H
+
2V
PK
x C
I
B
T
L
+
2V
PK
xC
I
C
f
OSC
I
C
2V
PK
xC
I
C
t t
I
B
+VCC
+
NE5517/A
VOUT2
VCC
+VCC
INT
INT
+
NE5517/A
+VCC
20k
VCC
VCC
6
11
4
3
5
7
14
13
12
10
VOUT1
1
16
47k
VC
470k
C
0.1
F
8
INT
+VCC
2
R1
30k
30k
R2
30k
SL00325
IC
Figure 20. Sawtooth Pulse VCO
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
15
DIP16:
plastic dual in-line package; 16 leads (300 mil)
SOT38-4
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
16
SO16:
plastic small outline package; 16 leads; body width 3.9 mm
SOT109-1
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
17
REVISION HISTORY
Rev
Date
Description
_3
20021206
Product data (9397 750 10796); type number AU5517 added. ECN 8530887 29176 of 08 November 2002;
supersedes Product data NE5517_NE5517A version 2 of 03 August 2001.
Modifications:
Type number AU5517 added.
"Description" section edited.
_2
20010803
Product data (9397 750 09175); NE5517/NE5517A only; ECN 8530887 26833 of 2001 Aug 03 .
Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
18
Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given
in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no
representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be
expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree
to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to make changes in the products--including circuits, standard cells, and/or software--described
or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated
via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent,
copyright, or mask work right infringement, unless otherwise specified.
Contact information
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Koninklijke Philips Electronics N.V. 2002
All rights reserved. Printed in U.S.A.
Date of release: 12-02
Document order number:
9397 750 10796
Philips
Semiconductors
Data sheet status
[1]
Objective data
Preliminary data
Product data
Product
status
[2] [3]
Development
Qualification
Production
Definitions
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Level
I
II
III
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