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Электронный компонент: PUMD10

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DATA SHEET
Product specification
Supersedes data of 1998 Dec 04
1999 May 20
DISCRETE SEMICONDUCTORS
PUMD10
NPN/PNP resistor-equipped
transistors
book, halfpage
MBD128
1999 May 20
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
FEATURES
Transistors with different polarity and built-in bias
resistors R1 and R2 (typ. 2.2 k
and 47 k
respectively)
No mutual interference between the transistors
Simplification of circuit design
Reduces number of components and board space.
APPLICATIONS
Especially suitable for space reduction in portable
equipment
Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN/PNP resistor-equipped transistors in an SC-88
(SOT363) plastic package.
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector TR1; TR2
Fig.1 Simplified outline (SC-88) and symbol.
handbook, halfpage
6
5
4
1
2
3
R2
TR1
TR2
R1
R1
R2
MAM343
1
3
2
4
5
6
Top view
Fig.2 Equivalent inverter symbol.
MBK120
2, 5
6, 3
1, 4
MARKING
TYPE
NUMBER
MARKING CODE
PUMD10
Dt0
1999 May 20
3
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SC-88 standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-88 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
10
V
V
I
input voltage
positive
-
+12
V
negative
-
-
5
V
I
O
output current (DC)
-
100
mA
I
CM
peak collector current
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
Per device
P
tot
total power dissipation
T
amb
25
C; note 1
-
300
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
416
K/W
1999 May 20
4
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector cut-off current
I
C
= 0; V
CB
= 50 V
-
-
100
nA
I
CEO
collector cut-off current
I
B
= 0; V
CE
= 30 V
-
-
1
A
I
B
= 0; V
CE
= 30 V; T
j
= 150
C
-
-
50
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
180
A
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 5 V
100
-
-
V
CEsat
collector-emitter saturation voltage I
C
= 5 mA; I
B
= 0.25 mA
-
-
100
mV
V
i(off)
input-off voltage
I
C
= 100
A; V
CE
= 5 V
-
0.6
0.5
V
V
i(on)
input-on voltage
I
C
= 5 mA; V
CE
= 0.3 V
1.1
0.75
-
V
R1
input resistor
1.54
2.2
2.86
k
resistor ratio
17
21
26
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
TR1 (NPN)
-
-
2.5
pF
TR2 (PNP)
-
-
3
pF
R2
R1
-------
1999 May 20
5
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
Fig.3
DC current gain as a function of collector
current; typical values.
TR1 (NPN); V
CE
= 5 V.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
handbook, halfpage
10
3
10
10
2
1
MGR769
10
-
1
1
10
10
2
IC (mA)
hFE
(2)
(3)
(1)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
TR1 (NPN); I
C
/I
B
= 20.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
handbook, halfpage
10
3
10
2
10
MGR768
10
-
1
1
10
10
2
IC (mA)
VCEsat
(mV)
(2)
(3)
(1)
Fig.5
Input-off voltage as a function of collector
current; typical values.
TR1 (NPN); V
CE
= 5 V.
(1) T
amb
=
-
40
C.
(2) T
amb
= 25
C.
(3) T
amb
= 100
C.
handbook, halfpage
10
1
10
-
1
MGR771
10
-
2
10
-
1
1
10
IC (mA)
Vi(off)
(V)
(2)
(3)
(1)
Fig.6
Input-on voltage as a function of collector
current; typical values.
TR1 (NPN); V
CE
= 0.3 V.
(1) T
amb
=
-
40
C.
(2) T
amb
= 25
C.
(3) T
amb
= 100
C.
handbook, halfpage
10
2
1
10
MGR770
10
-
1
10
-
1
1
10
10
2
IC (mA)
Vi(on)
(V)
(2) (3)
(1)
1999 May 20
6
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
Fig.7
DC current gain as a function of collector
current; typical values.
TR2 (PNP); V
CE
=
-
5 V.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
handbook, halfpage
10
3
10
10
2
1
MGR765
-
10
-
1
-
1
-
10
-
10
2
IC (mA)
hFE
(2)
(3)
(1)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
TR2 (PNP); I
C
/I
B
= 20.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
handbook, halfpage
-
10
3
-
10
2
-
10
MGR764
-
10
-
1
-
1
-
10
-
10
2
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.9
Input-off voltage as a function of collector
current; typical values.
TR2 (PNP); V
CE
=
-
5 V.
(1) T
amb
=
-
40
C.
(2) T
amb
= 25
C.
(3) T
amb
= 100
C.
handbook, halfpage
-
10
4
-
10
3
-
10
2
MGR767
-
10
-
2
-
10
-
1
-
1
-
10
IC (mA)
Vi(off)
(mV)
(2)
(3)
(1)
Fig.10 Input-on voltage as a function of collector
current; typical values.
TR2 (PNP); V
CE
=
-
0.3 V.
(1) T
amb
=
-
40
C.
(2) T
amb
= 25
C.
(3) T
amb
= 100
C.
handbook, halfpage
-
10
4
-
10
3
-
10
2
MGR766
-
10
-
1
-
1
-
10
-
10
2
IC (mA)
Vi(on)
(mV)
(3)
(2)
(1)
1999 May 20
7
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT363
SC-88
w
B
M
bp
D
e1
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT363
UNIT
A1
max
bp
c
D
E
e
1
HE
Lp
Q
y
w
v
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
1999 May 20
8
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 20
9
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
NOTES
1999 May 20
10
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
NOTES
1999 May 20
11
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
PUMD10
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Internet: http://www.semiconductors.philips.com
1999
64
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Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 May 20
Document order number:
9397 750 05873