Philips
Semiconductors
SA621
1GHz - Low voltage LNA, mixer and VCO
Product specification
1997 Nov 07
INTEGRATED CIRCUITS
IC17 Data handbook
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
2
1997 Nov 07
853-1849 018660
DESCRIPTION
The SA621 is a combined low-noise amplifier, mixer and VCO
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of -7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than
0.2dB over -40 to +85
C temperature range. The
wide-dynamic-range mixer has a 12dB noise figure and IP3 of
+4.5dBm at the input at 881MHz. The integrated VCO circuit with
external resonator produces a high quality LO signal that drives the
mixer and is buffered to an external PLL synthesizer IC. The
nominal current drawn from a single 3V supply is 13.3mA.
Additionally, the entire circuit can be powered down to further reduce
the supply current to less than 20
A.
FEATURES
Low current consumption
Outstanding gain and noise figure
Excellent gain stability versus temperature and supply voltage
LNA, mixer and VCO power down capability
Monotonic VCO frequency vs control voltage
PIN CONFIGURATION
SR01429
1
2
3
4
5
6
7
8
9
10
11
12
13
14
20
19
18
17
16
15
GND
LNA OUT
VCC
LNA IN
GND
GND
MIXER IN
MIXER OUT
MIXER OUT
GND
GND
BYPASS
GND
TANK
GND
GND
LO OUT
PD2
PD1
GND
Figure 1. Pin Configuration
APPLICATIONS
900MHz cellular and cordless front-end
Spread spectrum receivers
RF data links
UHF frequency conversion
Portable radio
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
20-Pin Thin Shrink Small Outline Package (Surface-mount, TSSOP)
-40 to +85
C
SA621DH
SOT360-1
BLOCK DIAGRAM
SR01428
4
3
2
1
5
20
19
18
17
16
7
6
10
9
8
15
14
13
12
11
LO
GND
BYPASS
GND
V
CC
LNA
IN
GND
MIXER
IN
MIXER
OUT
MIXER
OUT
PD1
PD2
GND
LNA
OUT
GND
OUT
GND
TANK
LNA
GND
GND
GND
10pF
10pF
Figure 2. SA621 Block Diagram
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
3
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
1
-0.3 to +6
V
V
IN
Voltage applied to any other pin
-0.3 to (V
CC
+ 0.3)
V
P
D
Power dissipation, T
A
= 25
C (still air)2
20-Pin Plastic SSOP
980
mW
T
JMAX
Maximum operating junction temperature
150
C
P
MAX
Maximum power input/output
+20
dBm
T
STG
Storage temperature range
65 to +150
C
NOTE:
1. Transients exceeding 8V on V
CC
pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
JA
: 20-Pin SSOP
= 110
C/W
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
2.7 to 5.5
V
T
A
Operating ambient temperature range
-40 to +85
C
T
J
Operating junction temperature
-40 to +105
C
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
A
= 25
C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Full power-on
13.3
mA
I
CC
Supply current
LNA powered-down
10
mA
I
CC
Su
ly current
Standby (VCO + bias)
5.7
mA
Full power-down
20
A
V
T
PD logic threshold voltage
1.2
1.6
1.8
V
V
IH
Logic 1 level
2.0
V
CC
V
V
IL
Logic 0 level
0.3
0.8
V
I
IL
PD1 input current
Enable = 0.4V
10
A
I
IH
PD2 input current
Enable = 2.4V
10
A
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
4
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
A
= 25
C; RF
IN
= 881MHz, f
VCO
= 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
3
TYP
+3
UNITS
Low Noise Amplifier
f
RF
RF input frequency range
800
1000
MHz
S
21
Amplifier gain
15
dB
S
21
Amplifier gain in power-down mode
-28
dB
S
21
/
T
Gain temperature sensitivity enabled
0.006
dB/
C
S
21
/
f
Gain frequency variation
800MHz - 1.0GHz
0.013
dB/MHz
S
12
Amplifier reverse isolation
@ 881 MHz
-28
dB
S
11
Amplifier input match
With ext. impedance matching
-10
dB
S
22
Amplifier output match
-10
dB
P
-1dB
Amplifier input 1dB gain compression
-20
dBm
IP3
Amplifier input third order intercept
-7
dBm
NF
Amplifier noise figure
1.7
dB
t
ON
Amplifier turn-on time (Enable Lo
Hi)
120
s
t
OFF
Amplifier turn-off time (Enable Hi
Lo)
0.3
s
Mixer
PG
C
Mixer power conversion gain: R
P
= R
L
= 1.2k
,
f
RF
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
8.7
dB
S
11M
Mixer input match
Ext. impedance matching req.
-10
dB
NF
M
Mixer SSB noise figure
12
dB
P
-1dB
Mixer input 1dB gain compression
-10
dBm
IP3
M
Mixer input third order intercept
4.5
dBm
IP
2INT
Mixer input second order intercept
15
dBm
P
RFM-IF
Mixer RF feedthrough
RF
IN
= -25dBm
-41
dBm
P
LO-IF
LO feedthrough to IF
LO = -10dBm
-23
dBm
P
LO-RFM
LO to mixer input feedthrough
-52
dBm
P
LO-RF
LO to LNA input feedthrough
-38
dBm
Voltage Controlled Oscillator (VCO)
1
f
VCO
VCO frequency range
883
1083
MHz
P
VCO
VCO power out
See Figure 3
-10
-8
dBm
VCO phase noise
2
Offset = 30kHz
-109
dBc/Hz
VCO hase noise
2
Offset = 60kHz
-115
dBc/Hz
Harmonic content
-22
dBc
Residual modulation
45
dB
Pulling figure
VSWR=2:1, all phases
500
kHz
Pushing figure
100
kHz/V
Overall System
G
SYS
System gain
LNA + Mixer
23.0
23.7
24.4
dB
NOTES:
1. VCO performance dependent on external components.
2. Based on copper-plated 2mm ceramic resonator (1/4 wave), f = 1025MHz, and can be improved by silver-plated or larger resonators.
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
5
Table 1.
Power ON/OFF Control Logic
PD1
PD2
0
0
Full chip power-down
0
1 or open
VCO on, Mixer on, LNA power-down
1 or open
0
VCO on, LNA and Mixer power-down
1 or open
1 or open
Full chip power-on (default)
SR01424
+
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
PD1
PD2
GND
GND
GND
TANK
GND
GND
BYPASS
MIXER
GND
GND
GND
GND
V
CC
LO
OUT
IF
OUT
VCO
OUT
SA621
C3
6.8pF
L1
560nH
L4
560nH
C2
10nF
C14
6.8pF
C13
33pF
C8
10nF
3V
C12
100pF
C1
100pF
V
CC
OUT
MIXER
OUT
MIXER
IN
LNA
IN
LNA
OUT
L3
6.8nH
10nF
0.1
F
C9
C11
L6
12nH
C10
2.2pF
C6
10nF
R2
24
MURATA 2mm
1/4 WAVE
FREQ=1025MHz
C5
.5pF
C10
220pF
L7
18.5nH
HiQ
D1
R1
5.1k
VCO
CONTROL
D7
10nF
C4
2.2pF
Figure 3. SA621 Applications Circuit
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
6
PERFORMANCE CHARACTERISTICS
SR01425
-15
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LNA
1dB (dBm)
-40
C
25
C
LNA 1dB Compression vs V
CC
-16
-17
-18
-19
-20
-21
-22
-23
-24
-25
-10.0
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
MIXER 1dB (dBm)
-40
C
25
C
85
C
Mixer 1dB Compression vs V
CC
-10.5
-11.0
-11.5
-12.0
-9.0
-9.5
-28.0
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LNA
GAIN (dB)
-40
C
25
C
85
C
LNA Gain (Disabled) vs V
CC
-28.5
-29.0
-29.5
-30.0
-30.5
-31.0
-27.0
-27.5
7.0
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
MIXER IP3 (dBm)
-40
C
25
C
85
C
Mixer IP3 vs V
CC
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
-11
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LNA
IP3 (dBm)
-40
C
25
C
LNA IP3 vs V
CC
-2
-3
-4
-5
-6
-7
-8
-9
-10
0
85
C
85
C
-12
V
CC
(V)
V POWER OUT (dBm)
VCO Power Out vs V
CC
CC
-6.00
2.5
3
3.5
4
4.5
5
5.5
-40
C
25
C
85
C
-7.00
-8.00
-9.00
-10.00
-11.00
-12.00
-4.00
-5.00
0
Figure 4.
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
7
PERFORMANCE CHARACTERISTICS
SR01426
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
I (mA)
-40
C
25
C
85
C
I
CC
vs V
CC
and Temperature
13.0
12.8
12.6
12.4
12.2
12.0
11.8
13.8
13.6
13.4
13.2
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
MIXER GAIN (dB)
-40
C
85
C
Mixer Power Gain vs V
CC
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LO to LNA
IN (dBm)
-40
C
25
C
85
C
LO to LNA In Feedthrough vs V
CC
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LO to MIXER IN (dBm)
-40
C
LO to Mixer In Feedthrough vs V
CC
-35
-36
-37
-38
-39
-40
-41
-42
-43
-44
-45
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LO to IF (dBm)
-40
C
25
C
85
C
LO to IF Feedthrough vs V
CC
-20
-21
-22
-23
-24
-25
-26
-27
-28
-29
-30
12
11
10
9
8
7
6
5
4
25
C
25
C
85
C
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
I
CC
vs V
CC
at Room Temperature
14
12
10
8
6
4
0
I
CC
Full Chip PowerOn
2
I
CC LNA Off, Mixer & VCO On
I
CC VCO On, LNA & Mixer Off
I (mA) CC
-44
-46
-48
-50
-52
-54
-56
-58
-60
-62
-64
CC
Figure 5.
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
8
PERFORMANCE CHARACTERISTICS
SR01427
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
MIXER IN to IF (dBm)
-40
C
85
C
Mixer In to IF Feedthrough vs V
CC
15.0
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LNA
GAIN (dB)
-40
C
25
C
85
C
LNA Gain (Enabled) vs V
CC
14.8
14.6
14.4
14.2
14.0
13.8
13.6
15.6
15.4
15.2
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
MIXER NOISE FIGURE (dB)
-40
C
25
C
85
C
Mixer Noise Figure vs V
CC
12.5
12.4
12.3
12.2
12.1
12.0
11.9
11.8
11.7
11.6
11.5
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
LNA
NOISE FIGURE (dB)
-40
C
25
C
85
C
LNA Noise Figure vs V
CC
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
85
C
VCO Phase Noise vs V
CC
@60kHz Offset
100.0
105.0
110.0
115.0
120.0
125.0
2.5
3
3.5
4
4.5
5
5.5
V
CC
(V)
VCO PHASE NOISE (dBc/Hz
VCO Phase Noise vs V
CC
@ 30kHz Offset
100.0
105.0
110.0
115.0
120.0
125.0
95.0
25
C
40
C
85
C
95.0
40
C
35
36
37
38
39
40
41
42
43
44
45
25
C
VCO PHASE NOISE (dBc/Hz
Figure 6.
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
9
CH2
S
11
1 U FS
3
2
1
4
1:
40.1
-129.6
200 MHz
2:
24.0
-62.9
400 MHz
3:
18.6
-37.4
600 MHz
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01252
4:
14.1
10.5 pF
-16.7
900 MHz
3
CH1
S
22
1 U FS
2
1
4
1:
40.5
-28.2
700 MHz
2:
36.1
-12.4
800 MHz
3:
34.7
3.5
900 MHz
START
700. 000 000 MHz
STOP
1 200. 000 000 MHz
4:
34.9
3.74
661.4 pH
900 MHz
A. S11 DATA
B. S22 DATA
Figure 7. Typical S
11
of LNA at 3V
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
10
3
CH1
S
22
1 U FS
2
1
4
1:
40.5
-28.2
700 MHz
2:
36.1
-12.4
800 MHz
3:
34.7
3.5
900 MHz
START
700. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01253
4:
34.9
3.74
661.4 pH
900 MHz
Figure 8. Typical S
22
of LNA at 3V
CH1
S
21
10 U FS
1:
6.7 U
142.5
200 MHz
2:
5.9 U
112.3
400 MHz
3:
5.9 U
78.1
600 MHz
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
1
3
2
4
SR01254
4:
4.5 U
21.2
900 MHz
Figure 9. Typical S
21
of LNA at 3V
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
11
CH2
S
12
50 mU FS
1:
1.9 mU
83.0
200 MHz
2:
1.6 mU
133.5
400 MHz
3:
11.4 mU
141.5
600 MHz
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
3
2
4
SR01255
1
4:
27.9 mU
106.1
900 MHz
Figure 10. Typical S
12
of LNA at 3V
3
CH1
S
11
1 U FS
2
1
4
1:
122.8
-144.9
200 MHz
2:
58.0
-86.8
400 MHz
3:
45.9
-62.3
600 MHz
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01256
4:
26.6
-43.2
4.085 pF
900 MHz
Figure 11. Typical S
11
of Mixer at 3V
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
12
4
CH1
S
11
/M
1 U FS
2
1
3
1:
-11.766
289.41
200 MHz
2:
11.953
134.05
400 MHz
3:
16.555
78.48
600 MHz
START
100. 000 000 MHz
STOP
1 200. 000 000 MHz
SR01257
3:
18.652
31.516
5.5732 nH
900 MHz
Figure 12. Typical 1/S
11
of VCO (Pin 7)at 3V
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
13
Table 2.
Typical S-Parameters of LNA at 3V
LNA
Freq (MHz)
|S
11
|
(U)
<S
11
(deg)
|S
21
|
(U)
<S
21
(deg)
|S
12
|
(U)
<S
12
(deg)
|S
22
|
(U)
<S
22
(deg)
100
0.86
-20
7.4
160
0.001
92
0.59
-10
122
0.86
-24
7.1
156
0.001
62
0.58
-12
144
0.85
-28
7.0
151
0.001
105
0.58
-14
166
0.83
-32
6.9
148
0.000
92
0.57
-16
188
0.82
-36
6.8
144
0.002
100
0.57
-18
210
0.81
-41
6.7
140
0.002
74
0.56
-20
232
0.80
-45
6.6
136
0.002
100
0.55
-22
254
0.79
-48
6.5
133
0.001
84
0.54
-25
276
0.78
-52
6.4
130
0.001
103
0.53
-27
298
0.76
-56
6.3
126
0.002
94
0.52
-29
320
0.75
-59
6.3
123
0.002
67
0.51
-31
342
0.73
-63
6.2
119
0.002
108
0.50
-33
364
0.71
-66
6.1
116
0.002
118
0.48
-35
386
0.70
-69
6.0
113
0.001
103
0.47
-36
408
0.69
-72
5.9
111
0.001
176
0.46
-37
430
0.68
-76
5.9
109
0.004
174
0.45
-37
452
0.69
-78
6.0
106
0.006
162
0.46
-38
474
0.68
-82
6.1
102
0.007
160
0.47
-42
496
0.67
-85
6.1
97
0.008
153
0.47
-46
518
0.66
-89
6.1
93
0.010
146
0.46
-50
540
0.65
-92
6.1
89
0.009
142
0.45
-55
562
0.63
-96
6.1
85
0.010
138
0.43
-59
584
0.62
-99
6.0
81
0.011
146
0.42
-64
606
0.62
-102
5.9
77
0.011
141
0.40
-69
628
0.61
-104
5.8
72
0.013
137
0.38
-73
650
0.61
-107
5.7
69
0.013
131
0.36
-78
672
0.60
-109
5.7
65
0.016
130
0.34
-84
694
0.60
-112
5.6
61
0.016
132
0.31
-90
716
0.59
-115
5.5
57
0.017
129
0.29
-97
738
0.59
-118
5.5
53
0.019
128
0.27
-104
760
0.59
-121
5.3
48
0.021
123
0.24
-113
782
0.59
-124
5.3
44
0.021
122
0.22
-122
804
0.59
-126
5.1
40
0.022
120
0.21
-133
826
0.59
-129
5.0
36
0.024
118
0.19
-145
848
0.59
-132
4.9
31
0.026
116
0.18
-159
870
0.59
-135
4.8
26
0.027
112
0.17
-175
892
0.59
-138
4.6
22
0.028
108
0.18
169
914
0.59
-142
4.5
18
0.028
106
0.19
155
936
0.59
-144
4.3
14
0.028
106
0.20
142
958
0.59
-148
4.2
9
0.030
100
0.22
130
980
0.59
-151
4.0
4
0.031
99
0.24
120
1002
0.59
-153
3.8
0
0.031
95
0.26
111
1024
0.59
-157
3.6
-2
0.032
91
0.28
102
1046
0.59
-160
3.5
-6
0.032
86
0.30
95
1068
0.59
-164
3.3
-10
0.033
86
0.33
88
1090
0.59
-167
3.2
-14
0.033
81
0.35
82
1112
0.59
-170
3.0
-18
0.031
79
0.36
77
1134
0.58
-172
2.8
-22
0.030
46
0.38
72
1156
0.58
-175
2.7
-25
0.031
79
0.39
67
1178
0.57
-178
2.5
-28
0.031
74
0.41
63
1200
0.57
178
2.4
-31
0.029
72
0.42
59
Philips Semiconductors
Product specification
SA621
1GHz low voltage LNA, mixer and VCO
1997 Nov 07
14
Table 3.
Typical S-Parameters of Mixer at 3V
Mixer
Freq (MHz)
|S
11
|
(U)
<S
11
(deg)
100
0.73
-11
122
0.73
-147
144
0.72
-16
166
0.72
-19
188
0.72
-21
210
0.71
-24
232
0.70
-27
254
0.70
-29
276
0.69
-32
298
0.68
-34
320
0.67
-37
342
0.66
-39
364
0.64
-42
386
0.63
-44
408
0.62
-46
430
0.61
-48
452
0.59
-50
474
0.58
-52
496
0.57
-53
518
0.56
-54
540
0.55
-56
562
0.55
-57
584
0.54
-59
606
0.54
-61
628
0.54
-62
650
0.54
-64
Mixer
Freq (MHz)
|S
11
|
(U)
<S
11
(deg)
672
0.54
-65
694
0.54
-67
716
0.54
-69
738
0.54
-71
760
0.54
-73
782
0.55
-76
804
0.55
-78
826
0.55
-80
848
0.55
-82
870
0.55
-85
892
0.56
-87
914
0.55
-90
936
0.56
-93
958
0.56
-96
980
0.56
-98
1002
0.56
-101
1024
0.57
-104
1046
0.57
-106
1068
0.57
-110
1090
0.57
-112
1112
0.57
-115
1134
0.57
-118
1156
0.57
-121
1178
0.57
-124
1200
0.57
-127
Philips Semiconductors
Product specification
SA621
1GHz low voltage dLNA, mixer and VCO
1997 Nov 07
15
TSSOP20:
plastic thin shrink small outline package; 20 leads; body width 4.4 mm
SOT360-1
Philips Semiconductors
Product specification
SA621
1GHz low voltage dLNA, mixer and VCO
1997 Nov 07
16
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 940883409
Telephone 800-234-7381
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
Copyright Philips Electronics North America Corporation 1996
All rights reserved. Printed in U.S.A.
Philips
Semiconductors
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