Philips Semiconductors
SA630
Single pole double throw (SPDT) switch
Product Specification
Replaces data of October 10, 1991
1997 Nov 07
RF COMMUNICATIONS PRODUCTS
INPUT/OUTPUT
ENCH1
OUTPUT/INPUT
OUTPUT/INPUT
IC17 Data Handbook
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
2
1997 Nov 07
853-1577 18666
DESCRIPTION
The SA630 is a wideband RF switch fabricated in BiCMOS technol-
ogy and incorporating on-chip CMOS/TTL compatible drivers. Its
primary function is to switch signals in the frequency range DC -
1GHz from one 50
channel to another. The switch is activated by
a CMOS/TTL compatible signal applied to the enable channel 1 pin
(ENCH1).
The extremely low current consumption makes the SA630 ideal for
portable applications. The excellent isolation and low loss makes
this a suitable replacement for PIN diodes.
The SA630 is available in an 8-pin dual in-line plastic package and
an 8-pin SO (surface mounted miniature) package.
FEATURES
Wideband (DC - 1GHz)
Low through loss (1dB typical at 200MHz)
Unused input is terminated internally in 50
Excellent overload capability (1dB gain compression point +18dBm
at 300MHz)
Low DC power (170
A from 5V supply)
Fast switching (20ns typical)
Good isolation (off channel isolation 60dB at 100MHz)
PIN CONFIGURATION
VDD
GND
INPUT
ENCH1
OUT1
GND
1
2
3
4
5
6
7
8
AC GND
OUT2
D and N Packages
SR00578
Figure 1. Pin Configuration
Low distortion (IP
3
intercept +33dBm)
Good 50
match (return loss 18dB at 400MHz)
Full ESD protection
Bidirectional operation
APPLICATIONS
Digital transceiver front-end switch
Antenna switch
Filter selection
Video switch
FSK transmitter
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Dual In-Line Package (DIP)
-40 to +85
C
SA630N
SOT97-1
8-Pin Plastic Small Outline (SO) package (Surface-mount)
-40 to +85
C
SA630D
SOT96-1
BLOCK DIAGRAM
INPUT/OUTPUT
ENCH1
OUTPUT/INPUT
OUTPUT/INPUT
SR00579
Figure 2. Block Diagram
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
DD
Supply voltage
3.0 to 5.5V
V
T
A
Operating ambient temperature range
SA Grade
-40 to +85
C
T
J
Operating junction temperature range
SA Grade
-40 to +105
C
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
3
EQUIVALENT CIRCUIT
+5V
INPUT
ENCH1
1
2
3
4
5
6
7
8
AC BYPASS
CONTROL
LOGIC
VDD
50
OUT1
OUT2
20k
50
20k
SR00580
Figure 3. Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
DD
Supply voltage
-0.5 to +5.5
V
P
D
Power dissipation, T
A
= 25
o
C (still air)
1
8-Pin Plastic DIP
8-Pin Plastic SO
1160
780
mW
mW
T
JMAX
Maximum operating junction temperature
150
C
P
MAX
Maximum power input/output
+20
dBm
T
STG
Storage temperature range
-65 to +150
C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
JA
:
8-Pin DIP:
JA
= 108
C/W
8-Pin SO:
JA
= 158
C/W
DC ELECTRICAL CHARACTERISTICS
V
DD
= +5V, T
A
= 25
C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA630
UNITS
MIN
TYP
MAX
I
DD
Supply current
40
170
300
A
V
T
TTL/CMOS logic threshold voltage
1
1.1
1.25
1.4
V
V
IH
Logic 1 level
Enable channel 1
2.0
V
DD
V
V
IL
Logic 0 level
Enable channel 2
-0.3
0.8
V
I
IL
ENCH1 input current
ENCH1 = 0.4V
-1
0
1
A
I
IH
ENCH1 input current
ENCH1 = 2.4V
-1
0
1
A
NOTE:
1. The ENCH1 input must be connected to a valid Logic Level for proper operation of the SA630.
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
4
AC ELECTRICAL CHARACTERISTICS
1
- D PACKAGE
V
DD
= +5V, T
A
= 25
C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA630
UNITS
MIN
TYP
MAX
S
21
, S
12
Insertion loss (ON channel)
DC - 100MHz
500MHz
900MHz
1
1.4
2
2.8
dB
S
21
, S
12
Isolation (OFF channel)
2
10MHz
100MHz
500MHz
900MHz
70
24
80
60
50
30
dB
S
11
, S
22
Return loss (ON channel)
DC - 400MHz
900MHz
20
12
dB
S
11
, S
22
Return loss (OFF channel)
DC - 400MHz
900MHz
17
13
dB
t
D
Switching speed (on-off delay)
50% TTL to 90/10% RF
20
ns
t
r
, t
f
Switching speeds (on-off rise/fall time)
90%/10% to 10%/90% RF
5
ns
Switching transients
165
mV
P-P
P
-1dB
1dB gain compression
DC - 1GHz
+18
dBm
IP
3
Third-order intermodulation intercept
100MHz
+33
dBm
IP
2
Second-order intermodulation intercept
100MHz
+52
dBm
NF
Noise figure (Z
O
= 50
)
100MHz
900MHz
1.0
2.0
dB
NOTE:
1. All measurements include the effects of the D package SA630 Evaluation Board (see Figure 4B). Measurement system impedance is 50
.
2. The placement of the AC bypass capacitor is critical to achieve these specifications. See the applications section for more details.
AC ELECTRICAL CHARACTERISTICS
1
- N PACKAGE
V
DD
= +5V, T
A
= 25
C; all other characteristics similar to the D-Package, unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA630
UNITS
MIN
TYP
MAX
S
21
, S
12
Insertion loss (ON channel)
DC - 100MHz
500MHz
900MHz
1
1.4
2.5
dB
S
21
, S
12
Isolation (OFF channel)
10MHz
100MHz
500MHz
900MHz
58
68
50
37
15
dB
NF
Noise figure (Z
O
= 50
)
100MHz
900MHz
1.0
2.5
dB
NOTE:
1. All measurements include the effects of the N package SA630 Evaluation Board (see Figure 4C). Measurement system impedance is 50
.
APPLICATIONS
The typical applications schematic and printed circuit board layout of
the SA630 evaluation board is shown in Figure 4. The layout of the
board is simple, but a few cautions need to be observed. The input
and output traces should be 50
. The placement of the AC bypass
capacitor is
extremely critical if a symmetric isolation between the
two channels is desired. The trace from Pin 7 should be drawn back
towards the package and then be routed downwards. The capacitor
should be placed straight down as close to the device as practical.
For better isolation between the two channels at higher frequencies,
it is also advisable to run the two output/input traces at an angle.
This also minimizes any inductive coupling between the two traces.
The power supply bypass capacitor should be placed close to the
device. Figure 10 shows the frequency response of the SA630.
The loss matching between the two channels is excellent to 1.2GHz
as shown in Figure 13.
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
5
1
2
3
4
5
6
7
8
D and N Packages
VDD
GND
INPUT
ENCH1
OUT1
AC GND
GND
OUT2
0.1
F
0.01
F
0.01
F
0.01
F
0.01
F
a. Evaluation Board Schematic
b. 630 D-Package Board Layout
c. 630 N-Package Board Layout
+5V
630N1 7/91
SR00581
Figure 4. Board and Package Graphics
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
6
The isolation and matching of the two channels over frequency is
shown in Figures 15 and 17, respectively.
The SA630 is a very versatile part and can be used in many
applications. Figure 5 shows a block diagram of a typical Digital RF
transceiver front-end. In this application the SA630 replaces the
duplexer which is typically very bulky and lossy. Due to the low
power consumption of the device, it is ideally suited for handheld
applications such as in CT2 cordless telephones. The SA630 can
also be used to generate Amplitude Shift Keying (ASK) or On-Off
Keying (OOK) and Frequency Shift Keying (FSK) signals for digital
RF communications systems. Block diagrams for these applications
are shown in Figures 6 and 7, respectively.
For applications that require a higher isolation at 1GHz than
obtained from a single SA630, several SA630s can be cascaded as
shown in Figure 8. The cascaded configuration will have a higher
loss but greater than 35dB of isolation at 1GHz and greater than
65dB @ 500MHz can be obtained from this configuration. By
modifying the enable control, an RF multiplexer/ de-multiplexer or
antenna selector can be constructed. The simplicity of SA630
coupled with its ease of use and high performance lends itself to
many innovative applications.
The SA630 switch terminates the OFF channel in 50
. The 50
resistor is internal and is in series with the external AC bypass
capacitor. Matching to impedances other than 50
can be achieved
by adding a resistor in series with the AC bypass capacitor (e.g.,
25
additional to match to a 75
environment).
5200
630
MODULATION
602A
IF OUT
5200
VCO
MICRO
Tx/Rx
KEYPAD
&
DISPLAY
CONTROLLER
SR00582
Figure 5. A Typical TDMA/Digital RF Transceiver System Front-End
630
ASK OUTPUT
ENABLE
CH1
OSCILLATOR
TTL DATA
50
SR00583
Figure 6. Amplitude Shift Keying (ASK) Generator
630
FSK OUTPUT
ENABLE
CH1
TTL DATA
f1
f2
SR00584
Figure 7. Frequency Shift Keying (FSK) Gnerator
630
IN/OUT
630
630
OUT1/IN1
OUT2/IN2
ENABLE
SR00585
Figure 8.
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
7
+85
C
+25
C
-40
C
200
180
160
140
120
100
80
60
40
20
0
3
3.5
4
4.5
5
5.5
6
SUPPLY VOLTAGE (V)
SUPPL
Y
CURRENT
(
A)
SR00586
Figure 9. Supply Current vs. V
DD
and Temperature
TA = +25
C
5V
4V
3V
FREQUENCY (MHz)
0
10
100
1000
2000
S (dB)
21
2
4
6
8
SR00587
Figure 10. Loss vs. Frequency and V
DD
for D-Package
3V
4V
5V
TA = +25
C
FREQUENCY (MHz)
10
100
1000
S (dB)
21
1
2
SR00588
Figure 11. Loss vs. Frequency and V
DD
for
D-Package-Expanded Detail-
VDD = 5V
TA = +25
C
CH2
FREQUENCY (MHz)
0
10
100
1000
2000
S (dB)
21
2
4
6
8
10
SR00589
Figure 12. Loss Matching vs. Frequency for N-Package (DIP)
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
8
VDD =
5V
CH1
TA = +25
C
FREQUENCY (MHz)
0
10
100
1000
2000
S (dB)
21
1
2
3
4
5
6
7
8
SR00590
Figure 13. Loss Matching vs. Frequency; CH1 vs. CH2 for
D-Pakage
VDD = 5V
-40
C
+85
C
+25
C
FREQUENCY (MHz)
0
10
100
1000
2000
S (dB)
21
1
2
3
4
5
6
7
8
SR00591
Figure 14. Loss vs. Frequency and Temperature for
D-Package
TA = +25
C
3V
5V
4V
FREQUENCY (MHz)
0
10
100
1000
2000
S (dB)
21
10
20
30
40
50
60
70
80
SR00592
Figure 15. Isolation vs. Frequency and V
DD
for D-Package
TA = +25
C
VDD = 5V
CH2
FREQUENCY (MHz)
0
10
100
1000
2000
S (dB)
21
10
20
30
40
50
60
70
80
SR00593
Figure 16. Isolation Matching vs. Frequency for N-Package
(DIP)
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
9
TA = +25
C
CH2
CH1
FREQUENCY (MHz)
0
10
100
1000
2000
S (dB)
21
10
20
30
40
50
60
70
80
VDD = +5V
SR00594
Figure 17. Isolation Matching vs. Frequency; CH1 vs. CH2 for
D-Package
TA = +25
C
3V
4V
5V
FREQUENCY (MHz)
0
5
10
15
20
25
30
10
100
1000
2000
S (dB)
11
SR00595
Figure 18. Input Match On-Channel vs. Frequency and V
DD
VDD = 5V
TA = +25
C
FREQUENCY (MHz)
0
5
10
15
20
25
30
10
100
1000
2000
S (dB)
22
SR00597
Figure 19. Output Match On-Channel vs. Frequency
FREQUENCY (MHz)
TA = +25
C
CH1: 3V
CH1: 5V
CH2: 5V
0
5
10
15
20
25
30
10
100
1000
2000
S (dB)
22
SR00597
Figure 20. OFF-Channel Match vs. Frequency and V
DD
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
10
FREQUENCY (MHz)
VDD = 5V
+85
C
+25
C
-40
C
0
5
10
15
20
25
30
10
100
1000
2000
S (dB)
22
SR00598
Figure 21. OFF Channel Match vs. Frequency and
Temperature
TA = +25
C
3V
4V
5V
20
18
16
14
12
10
8
6
4
2
0
10
100
1000
2000
FREQUENCY (MHz)
P
(dBm) -1
SR00599
Figure 22. P
-1
dB vs. Frequency and V
DD
3
3.5
4
4.5
5
5.5
6
IP2
IP3
60
50
40
30
20
10
0
SUPPLY VOLTAGE (V)
INTERCEPT
POINT
(dBm)
TA = +25
C
SR00633
Figure 23. Intercept Points vs.V
DD
10
100
1000
2000
FREQUENCY (MHz)
TA = +25
C
ZO = 50
3V
4V
5V
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
NOISE FIGURE (dB)
SR00634
Figure 24. Noise Figure vs. Frequency and V
DD
for D-Package
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
11
ENCH1 (Pin4)
OUT1 (Pin 8)
SR00635
Figure 25. Switching Speed; f
IN
= 100MHz at -6dBm, V
DD
= 5V
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
12
SO8:
plastic small outline package; 8 leads; body width 3.9mm
SOT96-1
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
13
DIP8:
plastic dual in-line package; 8 leads (300 mil)
SOT97-1
Philips Semiconductors
Product specification
SA630
Single pole double throw (SPDT) switch
1997 Nov 07
14
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 940883409
Telephone 800-234-7381
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
Philips
Semiconductors
PDF 
ZIP