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Электронный компонент: SI2304DS

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SI2304DS
N-channel enhancement mode field-effect transistor
Rev. 01 -- 17 August 2001
Product data
M3D088
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM
1
technology
Product availability:
SI2304DS in SOT23.
2.
Features
s
TrenchMOSTM technology
s
Very fast switching
s
Subminiature surface mount package.
3.
Applications
s
Battery management
s
High speed switch
s
Low power DC to DC converter.
4.
Pinning information
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT23
2
source (s)
3
drain (d)
MSB003
Top view
1
2
3
s
d
g
MBB076
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
2 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
-
30
V
I
D
drain current (DC)
T
sp
= 25
C; V
GS
= 5 V
-
-
1.7
A
P
tot
total power dissipation
T
sp
= 25
C
-
-
0.83
W
T
j
junction temperature
-
-
150
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 500 mA
-
-
117
m
V
GS
= 4.5 V; I
D
= 500 mA
-
-
190
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
30
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 150
C; R
GS
= 20 k
-
30
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
sp
= 25
C; V
GS
= 5 V;
Figure 2
and
3
-
1.7
A
T
sp
= 100
C; V
GS
= 5 V;
Figure 2
and
3
-
1.1
A
I
DM
peak drain current
T
sp
= 25
C; pulsed; t
p
10
s
-
7.5
A
P
tot
total power dissipation
T
sp
= 25
C;
Figure 1
-
0.83
W
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
65
+150
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
sp
= 25
C
-
0.83
A
I
SM
peak source (diode forward) current T
sp
= 25
C; pulsed; t
p
10
s
-
3.3
A
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
3 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
V
GS
10 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
T
sp
= 25
C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0
50
100
150
200
Tsp (
o
C)
Pder
(%)
03aa25
0
20
40
60
80
100
120
0
50
100
150
200
Tsp
(
o
C)
Ider
(%)
P
der
P
tot
P
tot 25 C
(
)
-----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
tp
tp
T
P
t
T
=
102
ID
(A)
10
1
10-1
10-2
VDS (V)
1
10
102
10-1
RDSon = VDS / ID
tp = 10
s
1 ms
10 ms
100 ms
D.C.
003aaa120
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
4 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value
Unit
R
th(j-sp)
thermal resistance from junction to solder point
mounted on a metal clad substrate;
Figure 4
100
K/W
Fig 4.
Transient thermal impedance from junction to solder point as a function of
pulse duration.
tp
tp
T
P
t
T
=
=
0.02
0.05
0.2
0.1
0.5
Single pulse
Zth(j-sp)
(K/W)
tp (s)
102
103
10
1
10
1
10-1
10-2
10-3
10-4
003aaa121
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
5 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 10
A; V
GS
= 0 V
T
j
= 25
C
30
40
-
V
T
j
=
-
55
C
27
-
-
V
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
C
1.5
2
-
V
T
j
= 150
C
0.5
-
-
V
T
j
=
-
55
C
-
-
2.7
V
I
DSS
drain-source leakage current
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
C
-
0.01
0.5
A
T
j
= 150
C
-
-
10
A
I
GSS
gate-source leakage current
V
GS
=
10 V; V
DS
= 0 V
-
10
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 500 mA;
Figure 7
and
8
T
j
= 25
C
-
-
117
m
V
GS
= 4.5 V; I
D
= 500 mA
T
j
= 25
C
-
-
190
m
T
j
= 150
C
-
-
300
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 10 V; I
D
= 1 A
1.4
2.5
-
S
Q
g(tot)
total gate charge
V
DD
= 15 V; V
GS
= 10 V; I
D
= 0.5 A;
Figure 13
-
4.6
nC
Q
gs
gate-source charge
-
0.6
-
nC
Q
gd
gate-drain (Miller) charge
-
1.35
1.83
nC
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
Figure 11
-
147
195
pF
C
oss
output capacitance
-
65
78
pF
C
rss
reverse transfer capacitance
-
41
56
pF
t
d(on)
turn-on delay time
V
DD
= 15 V; R
L
= 15
; V
GS
= 10 V
-
4
6
ns
t
r
rise time
-
7.5
12
ns
t
d(off)
turn-off delay time
-
18
35
ns
t
f
fall time
-
13
19
ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 0.83 A; V
GS
= 0 V;
Figure 12
-
0.7
1.2
V
t
rr
reverse recovery time
I
S
= 1 A; dI
S
/dt =
-
100 A/
s; V
GS
= 0 V;
V
DS
= 25 V
-
69
-
ns
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
6 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
C
T
j
= 25
C and 175
C; V
DS
>
I
D
R
DSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
2.5
VGS (V) =
3.0
4.0
5.0
8.0
3.5
10.0
ID
(A)
4
3
2
1
0
VDS (V)
0
0.5
1.0
1.5
003aaa122
VDS > ID x RDSon
Tj = 25
oC
= 150 oC
5
4
3
2
1
0
ID
(A)
0
1
2
3
4
5
VGS (V)
003aaa123
3.5
5.0
8.0
10.0
RDSon
(
)
0.5
0.4
0.3
0.2
0.1
0
ID (A)
1
2
3
003aaa124
VGS (V) =
0
003aaa125
0
0.4
0.8
1.2
1.6
2.0
-60
-20
20
60
100
140
180
a
Tj (
oC)
a
R
DSon
R
DSon 25
C
(
)
------------------------------
=
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
7 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
C; V
DS
= 5 V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
Tj (
o
C)
VGS(th)
(V)
max
min
typ
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
1
2
3
4
5
VGS (V)
ID
(A)
max
typ
min
C
(pF)
10
102
103
VDS (V)
1
10
102
10-1
Crss
Coss,
Ciss,
003aaa126
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
8 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
o
C and 150
o
C; V
GS
= 0 V
I
D
= 0.5 A; V
DD
= 15 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
0
1.0
2.0
IS
(A)
Tj = 150
o
C
Tj = 25
o
C
0.2
0.4
0.6
0.8
VSD (V)
003aaa127
10
8
6
4
2
0
0
2
4
6
8
QG (nC)
VGS
(V)
003aaa128
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
9 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9.
Package outline
Fig 14. SOT23.
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 17 August 2001
10 of 12
9397 750 08526
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
01
20010817
-
Product data; initial version
9397 750 08526
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 17 August 2001
11 of 12
9397 750 08526
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 17 August 2001
11 of 12
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
11. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Data sheet status
[1]
Product status
[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 17 August 2001
Document order number: 9397 750 08526
Contents
Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1
Transient thermal impedance . . . . . . . . . . . . . . 4
8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11