Document Outline
- FEATURES
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- ORDERING INFORMATION
- BLOCK DIAGRAM
- PINNING
- FUNCTIONAL DESCRIPTION
- Laser control circuit section
- Photo diode signal filter and amplification section
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- QUALITY SPECIFICATION
- CHARACTERISTICS
- INTERNAL PIN CONFIGURATION
- APPLICATION INFORMATION
- PACKAGE OUTLINES
- SOLDERING
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Preliminary specification
Supersedes data of 1995 Nov 16
File under Integrated Circuits, IC01
1997 Jul 15
INTEGRATED CIRCUITS
TDA1300T; TDA1300TT
Photodetector amplifiers and laser
supplies
1997 Jul 15
2
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
FEATURES
Six input buffer amplifiers with low-pass filtering with
virtually no offset
HF data amplifier with a high or low gain mode
Two built-in equalizers for single or double speed mode
ensuring high playability in both modes
Full automatic laser control including stabilization and
an on/off switch and containing a separate supply V
DDL
for power reduction
Applicable with N-sub laser with N-sub or P-sub monitor
diode
Adjustable laser bandwidth and laser switch-on current
slope
Protection circuit preventing laser damage due to supply
voltage dip
Optimized interconnect between pick-up detector and
TDA1301
Wide supply voltage range
Wide temperature range
Low power consumption.
GENERAL DESCRIPTION
The TDA1300 is an integrated data amplifier and laser
supply for three beam pick-up detectors applied in a wide
range of mechanisms for Compact Disc (CD) and read
only optical systems. It offers 6 amplifiers which amplify
and filter the focus and radial diode signals adequately and
provides an equalized RF signal for single or double speed
mode which can be switched by means of the speed
control pin.
The device can handle astigmatic, single Foucault and
double Foucault detectors and is applicable with all N-sub
lasers and N-sub or P-sub monitor diode units.
After a single initial adjustment the circuit keeps control
over the laser diode current resulting in a constant light
output power independent of ageing. The chip is mounted
in a small SO24 or TSSOP24 package enabling mounting
close to the laser pick-up unit on the sledge.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DD
supply voltage
3
-
5.5
V
Diode current amplifiers (n = 1 to 6)
G
d(n)
diode current gain
1.43
1.55
1.67
I
O(d)
diode offset current
-
-
100
nA
B
3 dB bandwidth
I
i(d)
= 1.67
A
50
-
-
kHz
RFE amplifier (built-in equalizer)
t
d(eq)
equalization delay
f
i
= 0.3 MHz
-
320
-
ns
t
d(f)
flatness delay
double speed
-
5
-
ns
Laser supply
I
o(L)
output current
V
DDL
= 3 V
-
-
-
100
mA
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA1300T
SO24
plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
TDA1300TT
TSSOP24
plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
1997 Jul 15
3
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
1.5x
I/V
1.5x
1.5x
1.5x
1.5x
1.5x
1
2
3
4
5
6
I6in
Id6out
I5in
I4in
I3in
I2in
I1in
I6
23
2
O6
Id5out
5
O5
Id4out
1
O4
Id3out
3
O3
Id2out
6
O2
Id1out
4
9
10
8
VDDL
16
LO
7
LDON
RF
RFE
O1
95, 120, 134 or
240 k
I5
20
I4
24
I3
22
I2
19
I1
HG
LS
MI
13
CL
VDD
VDD
GND
21
Vgap
OTA
ILO
ON/OFF
SUPPLY
TDA1300T
ADJ
11
12
17
18
15
14
-4
Ii(central)
(N-sub) or
IADJ (P-sub)
Vmon (N-sub) or
Imon (P-sub)
MBG474
1997 Jul 15
4
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
PINNING
SYMBOL PIN
DESCRIPTION
O4
1
current amplifier 4 output
O6
2
current amplifier 6 output
O3
3
current amplifier 3 output
O1
4
current amplifier 1 output
O5
5
current amplifier 5 output
O2
6
current amplifier 2 output
LDON
7
control pin for switching the laser on
and off
V
DDL
8
laser supply voltage
RFE
9
equalized output voltage of sum signal
of amplifiers 1 to 4
RF
10
unequalized output
HG
11
control pin for gain switch
LS
12
control pin for speed switch
CL
13
external capacitor
ADJ
14
P-sub monitor (if connected via
resistor to GND);
N-sub monitor (if connected to V
DD
)
GND
15
ground (substrate connection)
LO
16
laser output; current output
MI
17
monitor diode input (laser)
V
DD
18
supply
I2
19
photo detector input 2 (central)
I5
20
photo detector input 5 (satellite)
I1
21
photo detector input 1 (central)
I3
22
photo detector input 3 (central)
I6
23
photo detector input 6 (satellite)
I4
24
photo detector input 4 (central)
Fig.2 Pin configuration.
handbook, halfpage
TDA1300T
1
2
3
4
5
6
7
8
9
10
11
12
O4
O6
O3
O1
O5
O2
LDON
VDDL
RFE
RF
HG
LS
I4
I6
I3
I1
I5
I2
VDD
MI
LO
GND
ADJ
CL
24
23
22
21
20
19
18
17
16
15
14
13
MBG472
1997 Jul 15
5
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
FUNCTIONAL DESCRIPTION
The TDA1300T; TDA1300TT can be divided into two main
sections:
Laser control circuit section
Photo diode signal filter and amplification section.
Laser control circuit section
The main function of the laser control circuit is to control
the laser diode current in order to achieve a constant light
output power. This is done by monitoring the monitor
diode. There is a fixed relation between light output power
of the laser and the current of the monitor diode. The circuit
can handle P-sub or N-sub monitor diodes.
N-sub
MONITOR
In this event pin 14 (ADJ) must be connected to the
positive supply voltage V
DD
to select the N-sub mode. With
an adjustable resistor (R
ADJn
) across the diode the monitor
current can be adjusted (and so the laser light output
power) if one knows that the control circuit keeps the
monitor voltage V
mon
at a constant level of
approximately 150 mV.
P-sub
MONITOR
In this event pin 14 (ADJ) is connected via resistor R
ADJp
to ground. The P-sub mode is selected and pin 14 (ADJ)
acts as reference band gap voltage, providing together
with R
ADJp
an adjustable current l
ADJ
. Now the control
circuit keeps the monitor current at a level which is 10l
ADJ
.
The circuit is built up in three parts:
The first part is the input stage which is able to switch
between both modes (N-sub or P-sub).
The second part is the integrator part which makes use
of an external capacitor C
L
. This capacitor has two
different functions:
During switch-on of the laser current, it provides a
current slope of typically:
(A/s)
After switch-on it ensures that the bandwidth equals
(Hz)
in case of P-sub monitor or
I
o(L)
t
--------------
10
6
C
L
-----------
B
P
K
G
ext
90
9
10
C
L
I
mon
--------------------------------------------------
(Hz)
in case of N-sub monitor, where
G
ext
represents the AC gain of an extra loop amplifier,
if applied, and K =
I
mon
/
I
L
which is determined by
the laser/monitor unit. I
mon
is the average current
(pin 17) at typical light emission power of the laser
diode.
The third part is the power output stage, its input being
the integrator output signal. This stage has a separate
supply voltage (V
DDL
), thereby offering the possibility of
reduced power consumption by supplying this pin with
the minimum voltage necessary.
It also has a laser diode protection circuit which comes into
action just before the driving output transistor will get
saturated due to a large voltage dip on V
DDL
. Saturation
will result in a lower current of the laser diode, which
normally is followed immediately by an increment of the
voltage of the external capacitor C
L
. This could cause
damage to the laser diode at the end of the dip.
The protection circuit prevents an increment of the
capacitor voltage and thus offers full protection to the laser
diode under these circumstances.
Photo diode signal filter and amplification section
This section has 6 identical current amplifiers.
Amplifiers 1 to 4 are designed to amplify the focus photo
diode signals. Each amplifier has two outputs: an
LF output and an internal RF output. Amplifiers 5 and 6
are used for the radial photo diode currents and only have
an LF output. All 6 output signals are low-pass filtered with
a corner frequency at 69 kHz. The internal RF output
signals are summed together and converted to a voltage
afterwards by means of a selectable transresistance.
This transresistance R
RF
can be changed between 140 k
(3.3 V application) or 240 k
(5 V application) in
combination with the P-sub monitor. In the event of the
N-sub monitor selection, R
RF
can be changed between
70 k
(3.3 V application) and 120 k
(5 V application).
The RF signal is available directly at pin 10 but there is
also an unfiltered signal available at pin 9.
The used equalization filter has 2 different filter curves:
One for single-speed mode
One for double-speed mode.
B
N
R
ADJn
C
L
---------------- K
G
ext
870
9
10
1997 Jul 15
6
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Table 1
Gain and monitor modes
Note
1. Logic 1 or not connected.
Table 2
Speed and laser modes; note 1
Notes
1. 1 = HIGH voltage (V
DD
); 0 = LOW voltage (GND); X = don't care.
2. If not connected.
3. X = don't care.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Classification A: human body model; C = 100 pF; R = 1500
; V
es
=
2000 V.
Charge device model: C = 200 pF; L = 2.5
H; R = 0
; V
es
= 250 V.
2. Equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
PIN
MONITOR MODE
R
RF
(k
)
INTENDED APPLICATION AREA
HG
ADJ
0
R
ADJp
connected
to ground
P-sub
140
3.3 V
0
1
N-sub
70
1
(1)
R
ADJp
connected
to ground
P-sub
240
5 V
1
(1)
1
N-sub
120
PIN
DEFAULT
VALUE
(2)
MODE
SPEED
LASER
SINGLE
DOUBLE
on
off
LS
1
1
0
X
(3)
X
(3)
LDON
1
X
(3)
X
(3)
1
0
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
supply voltage
-
8
V
P
max
maximum power dissipation
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
amb
operating ambient temperature
TDA1300T
-
40
+85
C
TDA1300TT
-
40
+70
C
V
es
(1)
electrostatic handling pin 16
note 2
-
2
+2
kV
electrostatic handling (all other pins)
-
3
+3
kV
1997 Jul 15
7
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
"SNW-FQ-611 part E". The numbers of the quality specification can be found in the "Quality
Reference Handbook". The handbook can be ordered using the code 9397 750 00192.
CHARACTERISTICS
V
DD
= 3.3 V; V
DDL
= 2.5 V; T
amb
= 25
C; R
ADJ
= 48 k
; HG = logic 1; LS = logic 1; with an external low-pass filter
(R
ext
= 750
; C
ext
= 47 pF) connected at the RFE output pin.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
TDA1300T
60
K/W
TDA1300TT
128
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
I
DD
supply current
laser off
-
7
-
mA
V
DD
amplifier supply voltage
3
-
5.5
V
V
DDL
laser control supply voltage
2.5
-
5.5
V
P
power dissipation
laser off; V
DD
= 3 V
-
20
-
mW
Diode current amplifiers (n = 1 to 6; m = 1 to 6)
I
i(d)
diode input current
note 1
-
-
10
A
I
n(i)(eq)
equivalent noise input current
-
1
-
pA/
Hz
V
i(d)
diode input voltage
I
i(d)
= 1.67
A
-
0.9
-
V
V
o(d)
diode output voltage
-
0.2
-
V
DD
-
1
V
G
d(n)
diode current gain
I
i(d)
= 1.67
A;
V
o(d(n))
= 0 V; note 2
1.43
1.55
1.67
I
O(d)
diode offset current
I
i(central)
= I
i(satellite)
= 0;
note 3
-
-
100
nA
Z
o(d)
output impedance
I
i(d)
= 1.67
A;
V
o(d(n))
= 0 V
500
-
-
k
B
3 dB bandwidth
I
i(d)
= 1.67
A
50
68
-
kHz
G
mm
mismatch in gain between
amplifiers
I
i(d)
= 1.67
A;
V
o(d(n))
= V
o(d(m))
-
-
3
%
1997 Jul 15
8
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Data amplifier; equalized single and double speed
V
O(RF)
DC output voltage
I
i(central)
= 0
-
0.3
-
V
R
RF
transresistance
N-sub monitor mode
(low gain); note 3
56
70
84
k
N-sub monitor mode
(high gain); note 3
96
120
144
k
P-sub monitor mode
(low gain); note 4
112
140
168
k
P-sub monitor mode
(high gain); note 4
200
240
285
k
V
O(RF)(max)
maximum output voltage
note 5
-
-
V
DD
-
1.2
V
SR
RF
RF slew rate
V
SR
= 1 V (peak-to-peak)
-
6
-
V/
s
Z
o(RF)
RF output impedance
f
i
= 1 MHz
-
100
-
t
d(eq)
equalization delay
-
320
-
ns
t
d(f)
flatness delay (
/
)
LS = 1; note 6
-
10
-
ns
LS = 0; note 6
-
5
-
ns
G/G
data amplifier gain ratio
note 6
4.5
6
-
dB
B
RF
unequalized output bandwidth I
i(d)
= 1.67
A
3
5
-
MHz
Control pins LDON, LS and HG (with 47 k
internal pull-up resistor)
V
IL
LOW level input voltage
-
0.2
-
+0.5
V
V
IH
HIGH level input voltage
V
DD
-
1
-
V
DD
+ 0.2
V
I
IL
LOW level input current
-
-
100
A
Laser output
V
o(L)
output voltage
I
o(L)
= 100 mA
-
0.2
-
V
DDL
-
0.7 V
I
o(L)
output current
-
-
-
100
mA
I
o(L)
/
t
slew rate output current
C
L
= 1 nF (see Fig.8)
-
3.4
-
mA/
s
Monitor diode input
V
ref
virtual reference voltage
N-sub monitor mode
130
150
170
mV
I
L
leakage current
N-sub monitor mode
-
1
-
nA
V
i(mon)
monitor input voltage
P-sub monitor mode
-
V
DD
-
0.7
-
V
I
i(mon)
monitor input current
P-sub monitor mode
-
-
2
mA
T
reference temperature drift
N-sub monitor mode
-
40
-
ppm
RS
ref
reference supply rejection
N-sub monitor mode
-
-
1
%
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Jul 15
9
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Notes to the characteristics
1. The maximum input current is defined as the current in which the gain G
d(n)
reaches its minimum. Increasing the
supply voltage to V
DD
= 5 V increases the maximum input current (see also Figs 4 and 5).
2. The gain increases if a larger supply voltage is used (see Fig.6).
3. Transresistance of 70 k
and 120 k
(typical) is only available in N-sub monitor mode (see Table 1).
4. Transresistance of 140 k
and 240 k
(typical) is only available in P-sub monitor mode (see Table 1).
5. Output voltage swing will be: V
O(RF)(swing)
= V
O(RF)(max)
-
V
O(RF)(p-p)
.
6. For single speed the data amplifier gain ratio is defined as gain difference between 1 MHz and 100 kHz, while the
flatness delay is defined up to 1 MHz (see Fig.7). For double speed the data amplifier gain ratio is defined as gain
difference between 2 MHz and 200 kHz, while the flatness delay is defined up to 2 MHz.
Reference source V
ADJ
and laser adjustment current I
ADJ
V
ref
reference voltage
R
ADJ
= 48 k
1.15
1.24
1.31
mV
T
reference temperature drift
-
40
-
ppm
RS
ref
reference supply rejection
-
-
1
%
I
ADJ
adjustment current
R
ADJ
= 5.6 k
-
-
200
A
Z
i
input impedance
R
ADJ
= 4.8 k
-
1
-
k
M
multiplying factor (I
mon
/I
ADJ
)
-
10
-
-
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Jul 15
10
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Transfer functions; see Fig.6
The equalized amplifier including C
ext
and R
ext
has the following transfer functions, where `RFE' refers to equalized
output only and `RF' refers to equalized and not equalized outputs.
F
OR SINGLE SPEED
(SP =
LOGIC
1)
(1)
F
OR DOUBLE SPEED
(SP =
LOGIC
0)
(2)
The denominator forms the denominator of a Bessel low-pass filter.
Symbols used in equations (1) and (2) are explained in Table 3.
Table 3
Transresistance
SYMBOL
DESCRIPTION
TYP.
UNIT
k
internally defined
4
os
/
1
internally defined
1.094
Q
internally defined
0.691
od
= 2
os
internally defined
17.6
10
-
6
rad/s
R
RF
see Chapter "Characteristics"
-
R
ext
external resistor
750
C
ext
external capacitor
47
pF
V
RFE
I
i(central)
-------------------
R
RF
1
ks
2
2
os
/
1
1 Q
/
s
os
/
s
2
2
os
/
+
+
------------------------------------------------------------------------
1
1
s
1
/
+
-----------------------
1
1
sR
ext
C
ext
+
------------------------------------------
=
V
RFE
I
i(central)
-------------------
R
RF
1
ks
2
2
os
/
1
1 Q
/
s
od
/
s
2
2
od
/
+
+
-------------------------------------------------------------------------
1
1
sR
ext
C
ext
+
------------------------------------------
=
1997 Jul 15
11
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Fig.3 Maximum input current as a function of V
DD
.
= test limit.
handbook, full pagewidth
5.5
24
Ii(max)
(
A)
8
3
3.5
4
4.5
5
VDD (V)
MBG471
12
16
20
handbook, full pagewidth
40
40
Io
(
A)
0
0
10
30
MBG469
20
30
10
20
(1)
Ii (
A)
(2)
(3)
Fig.4 Output current as a function of input current.
= test limit.
(1) G
d(n)
= 1.43.
(2) V
DD
= 5.5 V.
(3) V
DD
= 3.4 V.
1997 Jul 15
12
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
Fig.5 Gain as a function of V
DD
.
= test limit.
handbook, full pagewidth
5.5
1.75
Io/Ii
(mA)
1.35
3
3.5
4
4.5
5
VDD (V)
MBG470
1.45
1.55
1.65
Fig.6 Transfer of equalizer.
(1) Single speed.
(2) Double speed.
handbook, full pagewidth
-
1.0
9.0
MBG468
10
4
10
3
(1)
(1)
(2)
(2)
10
2
10
1.0
3.0
5.0
7.0
gain
(dB)
200
450
250
300
350
400
td
(ns)
f (kHz)
1997 Jul 15
13
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
INTERNAL PIN CONFIGURATION
Fig.7 Equivalent internal pin diagrams.
dbook, full pagewidth
VDD
VDD
VDDL
LO
ADJ
VDD
VDD
VDD
VDD
VDD
GND
LDON
HG
LS
from
LDON
circuitry
CL
47 k
RF
RFE
VDD
MI
P-sub mode
VDD
MI
N-sub mode
I1
I2
I3
I4
I5
I6
O1
O2
O3
O4
O5
O6
VDD
MBG475
1997 Jul 15
14
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
APPLICATION INFORMATION
handbook, full pagewidth
DIODE
AMPLIFIER
AND
LASER
SUPPLY
I1
I2
I3
I4
I5
I6
MI
LO
O1
O2
O3
O4
O5
O6
D1
D2
D3
D4
R1
LDON
R2
V
RL
V
RH
NRST
OTD
CLO
XTLI
XTLO
SICL
SIDA
focus
actuator
radial
actuator
sledge
SILD
XTLR
TS1
TS2
LDON
TDA1300
TDA1301
DIGITAL SERVO IC
POWER AMPLIFIER
(TDA7072/7073)
PLL
photo-
diodes
mon
la
N-sub monitor
configuration
2.5 to 5 V
V
DD
V
DD
V
DDA
V
DDD
V
DDA
V
DDD
V
DDL
CL
C
L
ADJ
GND
1 nF
CL
C
L
1 nF
HG
LS
RF/
RFE
HG
LS
RF/
RFE
DIODE
AMPLIFIER
AND
LASER
SUPPLY
I1
I2
I3
I4
I5
I6
MI
LO
O1
O2
O3
O4
O5
O6
LDON
TDA1300
photo-
diodes
mon
la
P-sub monitor
configuration
2.5 to 5 V
V
DD
V
DDL
ADJ
GND
clk
DECODER
(SAA7345)
MOTOR
CONTROL
SUBCODE
DECODER
POWER
AMP
left
right
DISPLAY
PROCESSOR
KEYBORD
DISPLAY
to
spindle
motor
end_stop_switch
clk
R
ADJp
R
ADJn
RA
FO
SL
V
SSD
V
SSK
MBG473
Fig.8 Application diagram for CD player.
1997 Jul 15
15
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
PACKAGE OUTLINES
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
2.65
0.30
0.10
2.45
2.25
0.49
0.36
0.32
0.23
15.6
15.2
7.6
7.4
1.27
10.65
10.00
1.1
1.0
0.9
0.4
8
0
o
o
0.25
0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.1
0.4
SOT137-1
X
12
24
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
c
L
v
M
A
13
(A )
3
A
y
0.25
075E05
MS-013AD
pin 1 index
0.10
0.012
0.004
0.096
0.089
0.019
0.014
0.013
0.009
0.61
0.60
0.30
0.29
0.050
1.4
0.055
0.419
0.394
0.043
0.039
0.035
0.016
0.01
0.25
0.01
0.004
0.043
0.016
0.01
e
1
0
5
10 mm
scale
SO24: plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
95-01-24
97-05-22
1997 Jul 15
16
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
UNIT
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0.05
0.95
0.80
0.30
0.19
0.2
0.1
7.9
7.7
4.5
4.3
0.65
6.6
6.2
0.4
0.3
8
0
o
o
0.13
0.1
0.2
1.0
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
0.75
0.50
SOT355-1
MO-153AD
93-06-16
95-02-04
0.25
0.5
0.2
w
M
b
p
Z
e
1
12
24
13
pin 1 index
A
A
1
A
2
L
p
Q
detail X
L
(A )
3
H
E
E
c
v
M
A
X
A
D
y
0
2.5
5 mm
scale
TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm
SOT355-1
A
max.
1.10
1997 Jul 15
17
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SO and
TSSOP packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
SO
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
The longitudinal axis of the package footprint must be
parallel to the solder flow.
The package footprint must incorporate solder thieves at
the downstream end.
TSSOP
Wave soldering is not recommended for TSSOP
packages. This is because of the likelihood of solder
bridging due to closely-spaced leads and the possibility of
incomplete solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, do not consider wave
soldering TSSOP packages with 48 leads or more, that
is TSSOP48 (SOT362-1) and TSSOP56 (SOT364-1).
M
ETHOD
(SO
AND
TSSOP)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1997 Jul 15
18
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Jul 15
19
Philips Semiconductors
Preliminary specification
Photodetector amplifiers and laser
supplies
TDA1300T; TDA1300TT
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
547027/50/03/pp20
Date of release: 1997 Jul 15
Document order number:
9397 750 01673
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