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Электронный компонент: TDA1517A

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DATA SHEET
Product specification
Supersedes data of 2001 Feb 14
File under Integrated Circuits, IC01
2001 Apr 17
INTEGRATED CIRCUITS
TDA1517ATW
8 W BTL or 2
4 W SE power
amplifier
2001 Apr 17
2
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
FEATURES
Requires very few external components
Flexibility in use: mono Bridge-Tied Load (BTL) and
stereo Single-Ended (SE); it should be noted that in
stereo applications the outputs of both amplifiers are in
opposite phase
High output power
Low offset voltage at output (important for BTL)
Fixed gain
Good ripple rejection
Mode select switch (operating, mute and standby)
AC and DC short-circuit safe to ground and V
P
Electrostatic discharge protection
Thermal protection
Reverse polarity safe
Capable of handling high energy on outputs (V
P
= 0 V)
No switch-on/switch-off plop
Low thermal resistance.
GENERAL DESCRIPTION
The TDA1517ATW is an integrated class-AB output
amplifier contained in a plastic heatsink thin shrink small
outline package (HTSSOP20). The device is primarily
developed for multimedia applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
P
supply voltage
6
12
18
V
I
ORM
repetitive peak output current
-
-
2.5
A
I
q(tot)
total quiescent current
-
40
80
mA
I
stb
standby current
-
0.1
100
A
SE application
P
o
output power
THD = 10%; R
L
= 4
-
4
-
W
SVRR
supply voltage ripple rejection
R
S
= 0
46
-
-
dB
cs
channel separation
R
S
= 10 k
40
55
-
dB
V
n(o)
noise output voltage
R
S
= 0
-
50
-
V
Z
i
input impedance
50
-
-
k
BTL application
P
o
output power
THD = 10%; R
L
= 8
-
8
-
W
SVRR
supply voltage ripple rejection
R
S
= 0
50
-
-
dB
V
OO
output offset voltage
-
-
150
mV
V
n(o)(offset)
noise output offset voltage
R
S
= 0
-
70
-
V
Z
i
input impedance
25
-
-
k
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA1517ATW
HTSSOP20
plastic, heatsink thin shrink small outline package; 20 leads; body
width 4.4 mm
SOT527-1
2001 Apr 17
3
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
BLOCK DIAGRAM
handbook, full pagewidth
MODE
MGU303
OUT1a
OUT1b
15 k
15 k
x 1
VA
standby
switch
VP
mute
switch
standby
reference
voltage
18 k
18 k
2
k
60
k
mute switch
Cm
Cm
power stage
8
9
15
VP1
VP2
16
17
not
connected
1
2
6
7
14
19
20
mute switch
VA
VA
2
k
60
k
power stage
12
13
4
10
11
SGND
PGND1
PGND2
OUT2a
OUT2b
non-inverting
input 1
inverting
input 2
18
SVRR
5
+
-
+
-
+
-
+
+
-
+
-
3
TDA1517ATW
mute
reference
voltage
input
reference
voltage
Fig.1 Block diagram.
2001 Apr 17
4
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
PINNING
SYMBOL
PIN
DESCRIPTION
n.c.
1
not connected
n.c.
2
not connected
IN1+
3
non-inverting input 1
SGND
4
signal ground
SVRR
5
supply voltage ripple rejection
n.c.
6
not connected
n.c.
7
not connected
OUT1a
8
output 1a
OUT1b
9
output 1b
PGND1
10
power ground 1
PGND2
11
power ground 2
OUT2a
12
output 2a
OUT2b
13
output 2b
n.c.
14
not connected
V
P1
15
supply voltage 1
V
P2
16
supply voltage 2
MODE
17
mode select switch
IN2
-
18
inverting input 2
n.c.
19
not connected
n.c.
20
not connected
handbook, halfpage
TDA1517ATW
MGU302
1
2
3
4
5
6
7
8
9
10
n.c.
n.c.
IN1
+
SGND
SVRR
n.c.
n.c.
OUT1a
OUT1b
PGND1
n.c.
n.c.
IN2
-
MODE
VP2
VP1
n.c.
OUT2b
OUT2a
PGND2
20
19
18
17
16
15
14
13
12
11
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
The TDA1517ATW contains two identical amplifiers with differential input stages. This device can be used for
Bridge-Tied Load (BTL) or Single-Ended (SE) applications. The gain of each amplifier is fixed at 20 dB. A special feature
of this device is the mode select switch. Since this pin has a very low input current (<40
A), a low cost supply switch
can be used. With this switch the TDA1517ATW can be switched into three modes:
Standby: low supply current
Mute: input signal suppressed
Operating: normal on condition.
2001 Apr 17
5
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
P
= 12 V; T
amb
= 25
C; measured in Fig.3; unless otherwise specified.
Note
1. The circuit is DC adjusted at V
P
= 6 to 18 V and AC operating at V
P
= 8.5 to 18 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT.
V
P
supply voltage
-
18
V
V
PSC
AC and DC short-circuit-safe voltage
-
18
V
V
rp
reverse polarity voltage
-
6
V
ERG
o
energy handling capability at outputs
V
P
= 0 V
-
200
mJ
I
OSM
non-repetitive peak output current
-
4
A
I
ORM
repetitive peak output current
-
2.5
A
P
tot
total power dissipation
-
5
W
T
vj
virtual junction temperature
-
150
C
T
stg
storage temperature
-
55
+150
C
T
amb
ambient temperature
-
40
+85
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
tbf
-
-
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
P
supply voltage
note 1
6.0
12
18
V
I
q
quiescent current
R
L
=
-
40
80
mA
Operating condition
V
MODE(oper)
mode switch voltage level
8.5
-
V
P
V
I
MODE(oper)
mode switch current
V
MODE
= 12 V
-
15
40
A
V
O
DC output voltage
-
5.7
-
V
V
OO
DC output offset voltage
-
-
150
mV
Mute condition
V
MODE(mute)
mode switch voltage level
3.3
-
6.4
V
V
O
DC output voltage
-
5.7
-
V
V
OO
DC output offset voltage
-
-
150
mV
Standby condition
V
MODE(stb)
mode switch voltage level
0
-
2
V
I
stb
standby current
-
0.1
100
A
2001 Apr 17
6
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
AC CHARACTERISTICS
V
P
= 12 V; f = 1 kHz; T
amb
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
SE application; note 1
P
o
output power
note 2
THD = 1%
2.5
3.3
-
W
THD = 10%
3
4
-
W
THD
total harmonic distortion
P
o
= 1 W
-
0.1
-
%
f
ro(L)
low frequency roll-off
-
1 dB; note 3
-
25
-
Hz
f
ro(H)
high frequency roll off
-
1 dB
20
-
-
kHz
G
V
voltage gain
19
20
21
dB
G
V
channel balance
-
-
1
dB
SVRR
supply voltage ripple rejection
note 4
on
46
-
-
dB
mute
46
-
-
dB
standby
80
-
-
dB
Z
i
input impedance
50
60
75
k
V
n(o)(rms)
noise output voltage (RMS value)
note 5
on; R
S
= 0
-
50
-
V
on; R
S
= 10 k
-
70
100
V
mute; note 6
-
50
-
V
cs
channel separation
R
S
= 10 k
40
55
-
dB
V
o(mote)
output voltage in mute
note 7
-
-
2
mV
BTL application; note 8
P
O
output power
note 2
THD = 1%
5
6.6
-
W
THD = 10%
6.5
8.0
-
W
THD
total harmonic distortion
P
o
= 1 W
-
0.03
-
%
f
ro(L)
low frequency roll-off
-
1 dB; note 3
-
25
-
Hz
f
ro(H)
high frequency roll off
-
1 dB
20
-
-
kHz
G
V
voltage gain
25
26
27
dB
SVRR
supply voltage ripple rejection
note 4
on
50
-
-
dB
mute
50
-
-
dB
standby
80
-
-
dB
Z
i
input impedance
25
30
38
k
V
n(o)(rms)
noise output voltage (RMS value)
note 5
on; R
S
= 0
-
70
-
V
on; R
S
= 10 k
-
100
200
V
mute; note 6
-
60
-
V
V
o(mute)
output voltage in mute
note 7
-
-
2
mV
2001 Apr 17
7
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
Notes to the characteristics
1. R
L
= 4
, measured in Fig.4.
2. Output power is measured directly at the output pins of the IC.
3. Frequency response externally fixed.
4. V
ripple
= V
ripple(max)
= 2 V (p-p); R
S
= 0
.
5. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
6. Noise output voltage independent of R
S
.
7. V
i
= V
i(max)
= 1 V (RMS).
8. R
L
= 8
, measured in Fig.3.
APPLICATION INFORMATION
handbook, full pagewidth
MGU304
15
4
10
11
16
8
+
OUT
-
OUT
PGND
SGND
9
100
nF
1000
F
RL
8
VCC
TDA1517ATW
15 k
10 k
8.2
k
15 k
12
13
+
IN1
3
18
17
MODE
5
470 nF
A
Ri
60 k
B
VCC
VCC
STANDBY/
MUTE LOGIC
MICRO-
CONTROLLER
c1
c2
c1
0
0
1
On
Mute
Standby
c2
0
1
0
SHORT CIRCUIT
AND
TEMPERATURE
PROTECTION
input
reference
voltage
Ri
60 k
Fig.3 BTL application block diagram.
2001 Apr 17
8
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
handbook, full pagewidth
MGU305
15
4
10
11
16
8
+
OUT
-
OUT
PGND
SGND
9
100
nF
1000
F
RL
4
VCC
TDA1517ATW
15 k
10 k
8.2
k
15 k
100
F
1000
F
RL
4
1000
F
12
13
IN1
+
3
18
17
MODE
5
220 nF
A
Ri
60 k
IN2
-
220 nF
B
VCC
VCC
STANDBY/
MUTE LOGIC
MICRO-
CONTROLLER
c1
c2
c1
0
0
1
On
Mute
Standby
c2
0
1
0
SHORT CIRCUIT
AND
TEMPERATURE
PROTECTION
input
reference
voltage
Ri
60 k
Fig.4 SE application block diagram.
Test conditions
T
amb
= 25
C; unless otherwise specified: V
P
= 12 V, BTL
application, f = 1 kHz, R
L
= 8
, fixed gain = 26 dB, audio
band-pass: 22 Hz to 22 kHz. In the figures as a function of
frequency a band-pass of 10 Hz to 80 kHz was applied.
The BTL application block diagram is shown in Fig.3. The
PCB layout [which accommodates both the mono (BTL)
and stereo (single-ended) application] is shown in Fig.6.
Printed-Circuit Board (PCB) layout and grounding
For high system performance levels certain grounding
techniques are imperative. The input reference grounds
have to be tied to their respective source grounds and
must have separate traces from the power ground traces;
this will separate the large (output) signal currents from
interfering with the small AC input signals. The small
signal ground traces should be located physically as far as
possible from the power ground traces. Supply and output
traces should be as wide as possible for delivering
maximum output power.
Proper supply bypassing is critical for low noise
performance and high power supply rejection. The
respective capacitor locations should be as close as
possible to the device and grounded to the power ground.
Decoupling the power supply also prevents unwanted
oscillations. For suppressing higher frequency transients
(spikes) on the supply line a capacitor with low ESR
(typical 0.1
F) has to be placed as close as possible to the
device. For suppressing lower frequency noise and ripple
signals, a large electrolytic capacitor (e.g. 1000
F or
greater) must be placed close to the IC.
In single-ended (stereo) application a bypass capacitor
connected to pin SVR reduces the noise and ripple on the
midrail voltage. For good THD and noise performance a
low ESR capacitor is recommended.
Input configuration
It should be noted that the DC level of the input pins is
approximately 2.1 V; a coupling capacitor is therefore
necessary.
2001 Apr 17
9
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
The formula for the cut-off frequency at the input is as
follows:
thus
As can be seen it is not necessary to use high capacitor
values for the input; so the delay during switch-on, which
is necessary for charging the input capacitors, can be
minimized. This results in a good low frequency response
and good switch-on behaviour.
In stereo applications (single-ended) coupling capacitors
on both input and output are necessary. It should be noted
that the outputs of both amplifiers are in opposite phase.
Built-in protection circuits
The IC contains two types of protection circuits:
Short-circuits the outputs to ground, the supply to
ground and across the load: short-circuit is detected and
controlled by a SOAR protection circuit
Thermal shut-down protection: the junction temperature
is measured by a temperature sensor. Thermal foldback
is activated at a junction temperature of >150
C.
Output power
The output power as a function of supply voltage has been
measured on the output pins and at THD = 10%. The
maximum output power is limited by the maximum
allowable power dissipation and the maximum available
output current, 2.5 A repetitive peak current.
Supply voltage ripple rejection
The SVRR has been measured without an electrolytic
capacitor on pin 5 and at a bandwidth of 10 Hz to 80 kHz.
The curves for operating and mute condition (respectively)
were measured with R
source
= 0
. Only in single-ended
applications is an electrolytic capacitor (e.g. 100
F) on
pin 5 necessary to improve the SVRR behaviour.
Headroom
A typical music CD requires at least 12 dB (is factor 15.85)
dynamic headroom (compared with the average power
output) for passing the loudest portions without distortion.
The following calculation can be made for this application
at V
P
= 12 V and R
L
= 8
: P
o
at THD = 0.1% is
approximately 5 W (see Fig.7).
Average listening level without any distortion yields:
The power dissipation can be derived from Fig.11 for 0 dB
and 12 dB headroom.
Table 1
Power rating
Thus for the average listening level (music power) a power
dissipation of 2.0 W can be used for the thermal PCB
calculation; see Section "Thermal behaviour (PCB design
considerations)".
Mode pin
For the 3 functional modes: standby, mute and operate,
the MODE pin can be driven by a 3-state logic output
stage, e.g. a microcontroller with some extra components
for DC-level shifting; see Fig.10 for the respective
DC levels.
Standby mode is activated by a low DC level between
0 and 2 V. The power consumption of the IC will be
reduced to <0.12 mW.
Mute mode is activated by a DC level between
3.3 and 6.4 V. The outputs of the amplifier will be muted
(no audio output); however the amplifier is DC biased
and the DC level of the output pins stays at half the
supply voltage. The input coupling capacitors are
charged when in mute mode to avoid pop-noise.
The IC will be in the operating condition when the
voltage at pin MODE is between 8.5 V and V
CC
.
Switch-on/switch-off
To avoid audible plops during switch-on and switch-off of
the supply voltage, the MODE pin has to be set in standby
condition (V
CC
level) before the voltage is applied
(switch-on) or removed (switch-off). The input and SVRR
capacitors are smoothly charged during mute mode.
The turn-on and turn-off time can be influenced by an
RC-circuit connected to the MODE pin. Switching the
device or the MODE pin rapidly on and off may cause `click
and pop' noise. This can be prevented by proper timing on
the MODE pin. Further improvement in the BTL application
can be obtained by connecting an electrolytic capacitor
(e.g. 100
F) between the SVRR pin and signal ground.
f
IC
1
2
R
i
C
i
------------------------------
=
f
IC
1
2
30
10
3
470
10
9
------------------------------------------------------------------------------
11 Hz
=
=
RATING
HEADROOM
POWER
DISSIPATION
P
o
= 5 W
(THD = 0.1%)
0 dB
3.5 W
12 dB
2.0 W
P
ALL
P
tot
factor
-----------------
5
15.85
---------------
315 mW
=
=
=
2001 Apr 17
10
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
Thermal behaviour (PCB design considerations)
The typical thermal resistance [R
th(j-a)
] of the IC in the
HTSSOP20 package is 37 K/W if the IC is soldered on a
printed-circuit board with double sided 35
m copper with
a minimum area of approximately 30 cm
2
. The actual
usable thermal resistance depends strongly on the
mounting method of the device on the printed-circuit
board, the soldering method and the area and thickness of
the copper on the printed-circuit board.
The bottom `heat-spreader' of the IC has to be soldered
efficiently on the `thermal land' of the copper area of the
printed-circuit board using the re-flow solder technique.
A number of thermal vias in the `thermal land' provide a
thermal path to the opposite copper site of the
printed-circuit board. The size of the surface layers should
be as large as needed to dissipate the heat.
The thermal vias (0.3 mm
) in the `thermal land' should
not use web construction techniques, because those will
have high thermal resistance; continuous connection
completely around the via-hole is recommended.
For a maximum ambient temperature of 60
C the
following calculation can be made: for the application at
V
P
= 12 V and R
L
= 8
the (ALL-) music power
dissipation approximately 2.0 W;
T
j(max)
= T
amb
+ P
R
th(j-a)
= 60
C + 2.0
37 = 134
C.
Note: the above calculation holds for application at
`average listening level' music output signals. Applying (or
testing) with sine wave signals will produce approximately
twice the music power dissipation; at worst case condition
this can activate the maximum temperature protection.
handbook, full pagewidth
60
50
40
30
20
10
0
K/W
1
0
number of 35
m copper layers
2
3
4
CU-LAYER 2-4
MGU306
L
L
ON-BOARD-COOLING
COPPER DESIGN
CU-LAYER 1
Rth(j-a)
Rth(j-p)
Fig.5 Thermal resistance of the HTSSOP20 mounted on printed-circuit board.
R
th(j-p)
curve is given for practical calculation purpose.
L = 30 mm plus vias
2001 Apr 17
11
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
handbook, full pagewidth
MGU312
IN1
sept
-
2000
IN2
-
OUT2
On
Std By
+
OUT1
+
VP
100 nF
220 nF
1000
F
25 V
1000
F
16 V
100
F/16 V
TDA
1517ATW
top view
bottom copper layout
top view
component layout
top view
top copper layout
Fig.6 Printed-circuit board layout for BTL and SE application.
For BTL applications the two 1000
F/16 V capacitors must be replaced by 0
jumpers.
2001 Apr 17
12
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
Typical performance characteristics for BTL
application at V
P
= 12 V and R
L
= 8
handbook, halfpage
10
1
10
-
1
10
-
2
MGU307
10
-
2
10
-
1
1
THD
(%)
Po (W)
10
Fig.7 THD as a function of P
o
.
handbook, halfpage
10
1
10
-
1
10
-
2
MGU308
10
-
2
10
-
1
1
THD
(%)
10
f (kHz)
10
2
Po = 1 W
Fig.8 THD as a function of frequency.
handbook, halfpage
-
80
-
60
-
40
-
20
0
MGU309
10
-
2
10
-
1
1
10
f (kHz)
SVRR
(dB)
10
2
mute
Fig.9 SVRR as a function of frequency.
handbook, halfpage
12
4
0
8
10
Vo
(V)
VMODE (V)
2
6
10
1
10
-
1
10
-
2
10
-
3
10
-
4
MGU310
Fig.10 V
o
as a function of V
MODE
.
2001 Apr 17
13
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
handbook, halfpage
0
10
6
0
2
1
3
4
5
2
P
(W)
4
6
8
Po (W)
MGU311
VP = 15 V
RL = 16
VP = 12 V
RL = 8
Fig.11 Power dissipation as a function of P
o
.
handbook, halfpage
0
2
6
8
Po
(W)
10
12
18
12
10
4
8
6
14
16
VP (V)
MGU323
RL = 4
8
16
Fig.12 P
o
as a function of V
P
.
2001 Apr 17
14
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
PACKAGE OUTLINE
UNIT
A1
A2
A3
bp
c
D
(1)
E
(2)
Z
(1)
Dh
e
L
Lp
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0.05
0.95
0.80
0.30
0.19
0.20
0.09
6.6
6.4
4.3
4.1
Eh
HE
3.1
2.9
4.5
4.3
0.65
6.6
6.2
0.5
0.2
8
0
o
o
0.13
0.1
0.2
1.0
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
0.75
0.50
SOT527-1
99-11-12
00-07-12
w
M
bp
D
Dh
Eh
Z
heathsink side
e
0.25
1
10
20
11
A
A
1
A
2
L
p
detail X
L
(A )
3
H
E
E
c
v
M
A
X
A
y
0
2.5
5 mm
scale
HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm
SOT527-1
A
max.
1.10
pin 1 index
2001 Apr 17
15
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 220
C for
thick/large packages, and below 235
C for small/thin
packages.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
2001 Apr 17
16
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
BGA, HBGA, LFBGA, SQFP, TFBGA
not suitable
suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS
not suitable
(2)
suitable
PLCC
(3)
, SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended
(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended
(5)
suitable
2001 Apr 17
17
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Apr 17
18
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
NOTES
2001 Apr 17
19
Philips Semiconductors
Product specification
8 W BTL or 2
4 W SE power amplifier
TDA1517ATW
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2001
72
Philips Semiconductors a worldwide company
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Printed in The Netherlands
753503/02/pp
20
Date of release:
2001 Apr 17
Document order number:
9397 750 08264