DATA SHEET
Preliminary specification
Supersedes data of 1998 Feb 25
File under Integrated Circuits, IC01
2000 Apr 18
INTEGRATED CIRCUITS
TDA8580J
Multi-purpose power amplifier
2000 Apr 18
2
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
FEATURES
General
Supply voltage range from 8 to 24 V
Low distortion
Few external components, fixed gain
High output power
Can be used as a stereo amplifier in Bridge-Tied Load
(BTL) or quad Single-Ended (SE) amplifiers
Single-ended mode without loudspeaker capacitor
Mute and standby mode with one- or two-pin operation
Diagnostic information for Dynamic Distortion Detector
(DDD), high temperature (145
C) and short-circuit
No switch on/off plops when switching between standby
and mute or mute and on; an external RC-network is
prescribed to ensure plop-free operation
Low offset variation at outputs between mute and on
Fast mute on supply voltage drops.
Protection
Short-circuit proof to ground, positive supply voltage and
across load; the supply voltage ranges where the
different short circuit conditions are guaranteed are
given in Chapter "Limiting values"
ESD protected on all pins
Thermal protection against temperatures exceeding
150
C.
GENERAL DESCRIPTION
The TDA8580J is a stereo Bridge-Tied Load (BTL) or a
quad Single-Ended (SE) amplifier that operates over a
wide supply voltage range from 8 to 24 V. This makes it
suitable for applications such as television, home-sound
systems and active speakers.
Because of an internal voltage buffer, this device can be
used without a capacitor connected in series with the load
(SE application). A combined BTL and 2
SE application
can also be configured (one chip stereo and subwoofer
application).
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8580J
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
2000 Apr 18
3
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
P
operating supply voltage
8.0
14.4
24
V
I
q(tot)
total quiescent current
V
P
= 14.4 V
-
140
170
mA
I
stb
standby supply current
V
P
= 14.4 V
-
1
50
A
Bridge-tied load application
G
v
voltage gain
31
32
33
dB
P
o
output power
THD = 0.5%; V
P
= 14.4 V; R
L
= 4
14
15
-
W
THD = 0.5%; V
P
= 24 V; R
L
= 8
21
23
-
W
THD
total harmonic distortion
f
i
= 1 kHz; P
o
= 1 W; V
P
= 14.4 V;
R
L
= 4
-
0.05
0.1
%
f
i
= 1 kHz; P
o
= 10 W; V
P
= 24 V;
R
L
= 8
-
0.02
0.05
%
V
offset(DC)
DC output offset voltage
V
P
= 14.4 V; mute condition; R
L
= 4
-
10
20
mV
V
P
= 14.4 V; on condition
-
0
140
mV
V
no
noise output voltage
R
s
= 1 k
; V
P
= 14.4 V
-
100
150
V
SVRR
supply voltage ripple rejection
f
i
= 1 kHz; V
ripple(p-p)
= 2 V; on or mute
condition; R
s
= 0
50
60
-
dB
Single-ended application
G
v
voltage gain
25
26
27
dB
P
o
output power
THD = 0.5%; V
P
= 14.4 V; R
L
= 4
3.8
4.0
-
W
THD = 0.5%; V
P
= 24 V; R
L
= 4
10.5
11.5
-
W
V
offset(DC)
DC output offset voltage
V
P
= 14.4 V; mute condition; R
L
= 4
-
10
20
mV
V
P
= 14.4 V; on condition
-
0
100
mV
V
no
noise output voltage
R
s
= 1 k
; V
P
= 14.4 V
-
80
120
V
SVRR
supply voltage ripple rejection
f
i
= 1 kHz; V
ripple(p-p)
= 2 V; on or mute
condition; R
s
= 0
40
45
-
dB
2000 Apr 18
4
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGE010
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
VP1
VP2
2
16
PGND1
PGND2
TDA8580J
2000 Apr 18
5
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
PINNING
SYMBOL
PIN
DESCRIPTION
OUT1+
1
non-inverting output 1
PGND1
2
power ground 1
V
P1
3
supply voltage 1
OUT2
-
4
inverting output 2
STANDBY
5
standby/mute/on selection input
DIAG
6
diagnostic output
IN1
7
input 1
IN2
8
input 2
BUFFER
9
single-ended buffer output
IN3
10
input 3
IN4
11
input 4
IN5
12
input 5; signal ground capacitor
connection
MUTE
13
mute/on selection input
OUT3
-
14
inverting output 3
V
P2
15
supply voltage 2
PGND2
16
power ground 2
OUT4+
17
non-inverting output 4
handbook, halfpage
TDA8580J
MGE009
OUT1
+
PGND1
VP1
OUT2
-
STANDBY
DIAG
IN1
IN2
BUFFER
IN3
IN4
IN5
MUTE
OUT3
-
VP2
PGND2
OUT4
+
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
Fig.2 Pin configuration.
2000 Apr 18
6
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
FUNCTIONAL DESCRIPTION
The TDA8580J is a multi-purpose power amplifier with four
amplifiers which can be connected in the following
configurations with high output power and low distortion (at
minimum quiescent current):
Dual bridge-tied load amplifiers
Quad single-ended amplifiers
Dual single-ended amplifiers and one bridge-tied load
amplifier.
The amplifier can be switched in on, mute and off
(standby) by the MUTE and STANDBY pins (for interfacing
directly with a microcontroller). One-pin operation is also
possible by applying a voltage greater than 8 V to the
STANDBY pin to switch the amplifier in on mode.
Special attention is given to the dynamic behaviour as
follows:
Slow offset change between mute and on (controlled by
MUTE and STANDBY pins)
Low noise levels, which are independent of the supply
voltage.
Protections are included to avoid the IC being damaged at:
Over temperature: T
j
> 150
C
Short-circuit of the output pin(s) to ground or supply rail;
when short-circuited, the power dissipation is limited
ESD protection (Human Body Model 3000 V, Machine
Model 300 V)
Energy handling. A DC voltage of 6 V can be connected
to the output of any amplifier while the supply pins are
short-circuited to ground.
Diagnostics are available for the following conditions
(see Figs 3, 4 and 5):
Chip temperature above 145
C
Distortion over 2% due to clipping
Short-circuit protection active.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
operating
-
24
V
no signal condition
-
28
V
V
DIAG
voltage on pin DIAG
-
18
V
I
OSM
non-repetitive peak output current
-
6
A
I
ORM
repetitive peak output current
-
4.5
A
V
P(scol)
supply voltage with short-circuit across load
-
28
V
V
P(scg)
supply voltage with short-circuit from output
to ground
-
26
V
V
P(scs)
supply voltage with short-circuit from output
to supply
-
16
V
V
P(rp)
reverse polarity
-
6
V
P
tot
total power dissipation
-
75
W
T
j
junction temperature
-
150
C
T
stg
storage temperature
-
55
+150
C
T
amb
ambient temperature
-
40
+85
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
40
K/W
R
th(j-c)
thermal resistance from junction to case
1.5
K/W
2000 Apr 18
7
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
CHARACTERISTICS
V
P
= 14.4 V; T
amb
= 25
C; f
i
= 1 kHz; R
L
=
; measured in test circuit of Fig.28; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
operating supply voltage
8.0
14.4
24
V
I
q(tot)
total quiescent current
-
140
170
mA
I
stb
standby current
-
1
50
A
V
O
DC output voltage
-
7.0
-
V
V
P(mute)
low supply voltage mute
6.0
7.0
8.0
V
V
I
DC input voltage
-
4.0
-
V
Control pins
S
TANDBY PIN
(see Table 1)
V
5(stb)
voltage at STANDBY pin for standby
condition
0
-
0.8
V
V
hys(5)(stb)
hysteresis voltage at STANDBY pin
for standby condition
note 1
-
0.2
-
V
V
5(mute)
voltage at STANDBY pin for mute
condition
V
13
< 0.8 V
2.0
-
5.3
V
V
5(on)
voltage at STANDBY pin for on
condition
V
P
> 9 V; note 2
8.0
-
18
V
M
UTE PIN
(see Table 1)
V
13(mute)
voltage at MUTE pin for mute
condition
V
5
= 5 V
0
-
0.8
V
V
13(on)
voltage at MUTE pin for on condition V
5
= 5 V
2.5
-
5.3
V
Diagnostic; output buffer (open-collector); see Figs 3, 4 and 5
V
OL
LOW-level output voltage
I
sink
= 1 mA
-
0.2
0.8
V
I
LI
leakage current
V
DIAG
= 14.4 V
-
-
1
A
CD
clip detector
V
DIAG
< 0.8 V
1
2
4
%
T
j(diag)
junction temperature for high
temperature warning
V
DIAG
< 0.8 V
-
145
-
C
Stereo BTL application; see Figs 6, 7, 10, 11, 14, 15, 18, 19, 21, 22, 23, 24, 26 and 28
THD
total harmonic distortion
f
i
= 10 kHz; P
o
= 1 W; R
L
= 4
;
filter: 22 Hz < f < 30 kHz
-
0.2
0.3
%
f
i
= 1 kHz; P
o
= 1 W; V
P
= 14.4 V;
R
L
= 4
-
0.05
0.1
%
f
i
= 1 kHz; P
o
= 10 W; V
P
= 24 V;
R
L
= 8
-
0.02
0.05
%
P
o
output power
THD = 0.5%; V
P
= 14.4 V; R
L
= 4
14
15
-
W
THD = 0.5%; V
P
= 24 V; R
L
= 8
21
23
-
W
THD = 10%; V
P
= 14.4 V; R
L
= 4
18
20
-
W
THD = 10%; V
P
= 24 V; R
L
= 8
28
30
-
W
G
v
voltage gain
V
o(rms)
= 3 V
31
32
33
dB
2000 Apr 18
8
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
Notes
1. Hysteresis between the rise and fall voltage when pin STANDBY is controlled with low ohmic voltage source.
2. At lower V
P
the voltage at the STANDBY pin for on condition will be adjusted automatically to maintain an
on condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
cs
channel separation
P
o
= 2 W; f
i
= 1 kHz; R
L
= 4
60
65
-
dB
G
v
channel unbalance
-
-
1
dB
V
offset(DC)
DC output offset voltage
on condition
-
0
140
mV
mute condition; R
L
= 4
-
10
20
mV
V
no
noise output voltage
R
s
= 1 k
; V
P
= 14.4 V; note 3
-
100
150
V
V
no(mute)
noise output voltage mute
note 3
-
0
20
V
V
o(mute)
output voltage mute
V
i(rms)
= 1 V
-
3
500
V
SVRR
supply voltage ripple rejection
R
s
= 0
; f
i
= 1 kHz;
V
ripple(p-p)
= 2 V; on or mute
condition
50
60
-
dB
Z
i
input impedance
23
30
37
k
CMRR
common mode rejection ratio
R
s
= 0
; V
i(rms)
= 0.5 V; f
i
= 1 kHz
-
60
-
dB
Quad SE application; see Figs 8, 9, 12, 13, 16, 17, 20, 25, 27 and 29
THD
total harmonic distortion
f
i
= 1 kHz; P
o
= 1 W; R
L
= 4
-
0.05
0.1
%
f
i
= 10 kHz; P
o
= 1 W; R
L
= 4
;
filter: 22 Hz < f < 30 kHz
-
0.2
0.3
%
f
i
= 1 kHz; P
o
= 1 W; V
P
= 24 V,
R
L
= 4
; filter: 22 Hz < f < 30 kHz
-
0.05
0.1
%
P
o
output power
THD = 0.5%; V
P
= 14.4 V; R
L
= 4
3.8
4.0
-
W
THD = 0.5%; V
P
= 24 V; R
L
= 4
10.5
11.5
-
W
THD = 10%; V
P
= 14.4 V; R
L
= 4
4.9
5.2
-
W
THD = 10%; V
P
= 24 V; R
L
= 4
14
15
-
W
G
v
voltage gain
V
o(rms)
= 3 V
25
26
27
dB
cs
channel separation
P
o
= 2 W; f
i
= 1 kHz; R
L
= 4
40
46
-
dB
G
v
channel unbalance
-
-
1
dB
V
offset(DC)
DC output offset voltage
V
P
= 14.4 V; on condition
-
0
100
mV
V
P
= 14.4 V; mute condition;
R
L
= 4
-
10
20
mV
V
no
noise output voltage
R
s
= 1 k
; V
P
= 14.4 V; note 3
-
80
120
V
V
no(mute)
noise output voltage mute
note 3
-
0
20
V
V
o(mute)
output voltage mute
V
i(rms)
= 1 V
-
3
500
V
SVRR
supply voltage ripple rejection
f
i
= 1 kHz; V
ripple(p-p)
= 2 V, on or
mute condition; R
s
= 0
40
45
-
dB
Z
i
input impedance
46
60
74
k
CMRR
common mode rejection ratio
V
i(rms)
= 0.5 V; f
i
= 1 kHz; R
s
= 0
-
60
-
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2000 Apr 18
9
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
Table 1
Selection of standby, mute and on
VOLTAGE AT PIN STANDBY
VOLTAGE AT PIN MUTE
FUNCTION
< 0.8 V
don't care
standby (off)
2 to 5.3 V
< 0.8 V
mute (DC settled)
2 to 5.3 V
2.5 to 5.3 V
on (AC operating)
8.0 V
don't care
on (AC operating)
handbook, halfpage
MGE020
DIAG
amplifier
output
temperature
overload
Fig.3 Diagnostic waveform: temperature overload.
handbook, halfpage
MGE021
DIAG
amplifier
output
normal
active
DDD
normal
Fig.4 Diagnostic waveform: DDD function.
2000 Apr 18
10
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
DIAG
amplifier
output
short-circuit to
GND
VP
MGE022
Fig.5
Diagnostic waveform: short-circuit to GND
or V
P
.
handbook, halfpage
1
10
-
1
10
-
2
MGS700
10
10
2
10
3
10
4
10
5
fi (Hz)
THD
(%)
(2)
(1)
Fig.6
Total harmonic distortion as a function of
frequency; BTL mode.
R
L
= 4
; V
P
= 14.4 V; 2 channel driven.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
handbook, halfpage
1
10
-
1
10
-
2
MGS701
THD
(%)
(2)
(1)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.7
Total harmonic distortion as a function of
frequency; BTL mode.
R
L
= 8
; V
P
= 24 V; 2 channel driven.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
handbook, halfpage
1
10
-
1
10
-
2
MGS702
THD
(%)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.8
Total harmonic distortion as a function of
frequency; SE mode.
P
o
= 1 W; R
L
= 4
; V
P
= 14.4 V; 4 channel driven.
2000 Apr 18
11
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
1
10
-
1
10
-
2
MGS703
THD
(%)
(1)
(2)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.9
Total harmonic distortion as a function of
frequency; SE mode.
R
L
= 4
; V
P
= 24 V; 4 channel driven.
(1) P
o
= 5 W.
(2) P
o
= 1 W.
handbook, halfpage
10
2
10
1
10
-
1
10
-
2
MGS704
10
-
1
Po (W)
THD
(%)
1
10
10
2
(1)
(1)
(3)
(3)
(2)
(2)
Fig.10 Total harmonic distortion as a function of
output power; BTL mode.
R
L
= 4
; V
P
= 14.4 V; 2 channel driven.
(1) f
i
= 10 kHz.
(2) f
i
= 1 kHz.
(3) f
i
= 100 Hz.
handbook, halfpage
10
2
10
1
10
-
1
10
-
2
MGS705
10
-
1
Po (W)
THD
(%)
1
10
10
2
(1)
(1)
(3)
(3)
(2)
(2)
Fig.11 Total harmonic distortion as a function of
output power; BTL mode.
R
L
= 8
; V
P
= 24 V; 2 channel driven.
(1) f
i
= 10 kHz.
(2) f
i
= 1 kHz.
(3) f
i
= 100 Hz.
handbook, halfpage
MGS706
1
10
Po (W)
THD
(%)
10
2
10
1
10
-
1
10
-
2
10
-
1
(1)
(3)
(3)
(1)
(2)
(2)
Fig.12 Total harmonic distortion as a function of
output power; SE mode.
R
L
= 4
; V
P
= 14.4 V; 4 channel driven
(1) f
i
= 10 kHz.
(2) f
i
= 1 kHz.
(3) f
i
= 100 Hz.
2000 Apr 18
12
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
10
2
10
1
10
-
1
10
-
2
MGS707
(1)
(1)
(3)
(3)
(2)
(2)
10
-
1
1
10
10
2
Po (W)
THD
(%)
Fig.13 Total harmonic distortion as a function of
output power; SE mode.
R
L
= 4
; V
P
= 24 V; 4 channel driven.
(1) f
i
= 10 kHz.
(2) f
i
= 1 kHz.
(3) f
i
= 100 Hz.
handbook, halfpage
0
10
20
30
30
10
0
20
MGS708
Pd
(W)
Po (W)
Fig.14 Power dissipation as a function of output
power; BTL mode.
f
i
= 1 kHz; R
L
= 4
; V
P
= 14.4 V; 2 channel driven.
handbook, halfpage
0
10
20
40
40
30
10
0
20
MGS709
30
Po (W)
Pd
(W)
Fig.15 Power dissipation as a function of output
power; BTL mode.
f
i
= 1 kHz; R
L
= 8
; V
P
= 24 V; 2 channel driven.
handbook, halfpage
0
2
4
6
16
12
4
0
8
MGS710
Po (W)
Pd
(W)
f
i
= 1 kHz; R
L
= 4
; V
P
= 14.4 V; 4 channel driven.
Fig.16 Power dissipation as a function of output
power; SE mode.
2000 Apr 18
13
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
0
4
8
16
40
30
10
0
20
MGS711
12
Po (W)
Pd
(W)
f
i
= 1 kHz; R
L
= 4
; V
P
= 24 V; 4 channel driven.
Fig.17 Power dissipation as a function of output
power; SE mode.
handbook, halfpage
8
12
16
20
40
30
10
0
20
MGS712
VP (V)
Po
(W)
(1)
(2)
Fig.18 Output power as a function of supply
voltage; BTL mode.
f
i
= 1 kHz; R
L
= 4
; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%.
handbook, halfpage
8
12
16
24
40
30
10
0
20
MGS713
20
VP (V)
Po
(W)
(1)
(2)
Fig.19 Output power as a function of supply
voltage; BTL mode.
f
i
= 1 kHz; R
L
= 8
; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%
handbook, halfpage
8
12
16
24
16
12
4
0
8
MGS714
20
VP (V)
Po
(W)
(1)
(2)
Fig.20 Output power as a function of supply
voltage; SE mode.
f
i
= 1 kHz; R
L
= 4
; 2 channel driven.
(1) THD = 0.5%.
(2) THD = 10%
2000 Apr 18
14
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
30
31
32
33
34
MGS717
Gv
(dB)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.21 Gain as a function of input frequency;
BTL mode.
C
i
= 470 nF.
-
0.8
-
0.4
0
0.4
0.8
MGS715
Po
(W)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.22 Power bandwidth as a function of
frequency; BTL mode.
THD = 0.5%; R
L
= 4
; V
P
= 14.4 V.
handbook, halfpage
-
0.8
-
0.4
0
0.4
0.8
MGS716
Po
(W)
10
10
2
10
3
10
4
10
5
fi (Hz)
THD = 0.5%; R
L
= 8
; V
P
= 24 V.
Fig.23 Power bandwidth as a function of
frequency; BTL mode.
handbook, halfpage
-
70
-
66
-
58
-
62
-
54
-
50
MGS718
cs
(dB)
(2)
(1)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.24 Channel separation as a function of
frequency; BTL mode.
P
o
= 2 W; R
L
= 4
; V
P
= 14.4 V.
(1) Channels 3 and 4 to channels 1 and 2.
(2) Channels 1 and 2 to channels 3 and 4.
2000 Apr 18
15
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, halfpage
-
60
-
40
-
50
-
30
-
20
MGS719
cs
(dB)
(2)
(3)
(1)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.25 Channel separation as a function of
frequency; SE mode.
P
o
= 2 W; R
S
= 0
; R
L
= 4
; V
P
= 14.4 V.
(1) Channel 1 to channel 2.
(2) Channel 1 to channel 3.
(3) Channel 1 to channel 4.
handbook, halfpage
-
80
-
40
-
60
-
20
MGS720
SVRR
(dB)
(2)
(1)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.26 SVRR as a function of frequency;
BTL mode.
R
s
= 0
; V
ripple(p-p)
= 2 V.
(1) V
p
= 14.4 V.
(2) V
p
= 24 V.
handbook, halfpage
-
60
-
40
-
50
-
30
-
20
MGS721
SVRR
(dB)
(1)
(2)
10
10
2
10
3
10
4
10
5
fi (Hz)
Fig.27 SVRR as a function of frequency; SE mode.
R
s
= 0
; V
ripple(p-p)
= 2 V.
(1) V
p
= 14.4 V.
(2) V
p
= 24 V.
2000 Apr 18
16
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
APPLICATION INFORMATION
The application circuit depends on the supply voltage
used. For supply voltages below 18 V the application
circuits are shown in Figs 28, 29 and 30.
The typical application circuits for the different supply
voltage ranges are shown in Figs 31, 32 and 33.
Additional information for the applications shown in
Figs 28, 29 and 30
The RC-network connected to pin 5 determines the
amplifier switch on/off behaviour as follows;
Switched from STANDBY to MUTE when V
switching
(typically 9 V) is enabled and the switch SW1 is closed.
During MUTE there is no output noise and no offset.
Switched from MUTE to ON when the switch SW1 is
opened. During switching ON the offset and noise are
gradually built up. The time constant is fixed by R1
C1.
The inputs can be tied together and connected to one input
capacitor. Because the input resistance is decreased by a
factor of 2, the low frequency roll-off is shifted to a higher
frequency when C
i
is kept the same value.
The low frequency cut-off is determined by;
The Boucherot network connected to the buffer (pin 9) is
necessary to guarantee a low output resistance at high
frequencies when the buffer is loaded (only in SE
applications).
Additional information for the applications shown in
Figs 31, 32 and 33
Short circuit behaviour at high supply voltages (V
p
> 18 V):
When V
p
> 18 V it is advisable to use the applications
given in Figs 32 and 33. In these applications the
diagnostics output is tied to pin 5 (one pin operation) or
pin 13 (two pin operation). During a fault condition the
amplifier is soft-muted and the amplitude of the output
signal is reduced at:
over temperature (still large dynamic range)
short to ground and over load (output current
reduced)
The 4.7
F capacitor and the 10 k
resistor connected
to pin 5 or to pin 13 are used to:
provide a stable loop
control the switch on/off behaviour
minimize the effect due to clip detection.
Use of common buffer
In SE applications the buffer output is used in place of a
SE capacitor. To minimize the crosstalk (high channel
separation) and distortion it is advised to connect the
speaker wires as closely as possible to pin 9 without using
a shared wire. Internally in the IC all the efforts have been
taken to minimize the crosstalk by locating the feedback
loops as close as possible to pin 9.
If a common wire is shared by all the speakers, the series
resistance of this shared wire will introduce added signal
voltages resulting from the currents flowing through this
wire when a connected amplifier is driven by a signal.
Optimize the THD performance
The TDA8580J application can be optimized to gain the
lowest THD possible by applying the following guidelines:
SE application: minimize the shared wires to pin 9 (see
section "Use of common buffer").
Because the inputs are quasi differential, ground loops
can be avoided by connecting the negative terminal of
the 100
F signal ground capacitor (connected to
pin 12) to the ground pin of the signal processor.
Note: do not leave the inputs in the open condition to
prevent HF oscillation.
Increase the value of electrolytic supply capacitor
(typical value 1000
F) to the maximum possible to
minimize cross talk and distortion at low signal
frequencies, due to the PSRR (power supply rejection
ratio). For suppressing high frequency transients on the
supply line a capacitor (typical value 100 nF) with a low
ESR is required to be connected in parallel with the
electrolytic capacitor. The capacitor combination must
be placed as close as possible to the IC (using short
interconnection tracks).
Headroom
A typical CD requires at least 12 dB dynamic headroom
(a factor of 15.85), compared with the average power
output, for passing the loudest parts without distortion.
f
3dB
1
2
(
R
i
C
i
)
/
1
2
60
10
3
220
10
9
----------------------------------------------------------------------
12 Hz.
=
=
=
2000 Apr 18
17
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
For BTL application at V
p
= 24 V, R
L
= 8
and P
o
at
THD = 0.5% (see Fig.15), the Average Listening
Level (ALL) for music power without distortion yields:
Table 2
P
d
as a function of headroom (music signals) for
P
o
= 2
23 W (THD = 0.5%).
So for the average music listening level a total power
dissipation of 16 W can be used for calculating the
optimum heat sink thermal resistance.
Heatsink calculation
The measured thermal resistance of this package R
th(j-c)
is
a maximum of 1.5 K/W. For a maximum ambient
temperature of 60
o
C the required heatsink thermal
resistance can be calculated as shown in the following
example.
EXAMPLE
Measured or given values:
V
p
= 24 V
R
L
= 8
(2
BTL)
Measured worst case P
d
(sine wave) = 32 W
T
j(max)
= 150
o
C
T
amb(max)
= 60
o
C
R
th(j-c)
= 1.5 K/W
Table 3
Heatsink thermal resistance as a function of
headroom for P
o
= 2
23 W (THD = 0.5%).
HEADROOM
P
d
0 dB
32 W
12 dB
16 W
P
o ALL
(
)
23
15.85
---------------
1.45 W.
=
=
HEAD ROOM
P
d
R
th(hs)
0 dB
32 W
1.3 K/W
12 dB
16 W
4.12 K/W
R
th hs
( )
T
j max
(
)
T
amb max
(
)
P
d
--------------------------------------------------
R
th j
c
(
)
150
60
32
----------------------
1.5
1.3 K/W
=
=
=
2000 Apr 18
18
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth
MGU075
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
-
+
-
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
2
16
PGND1
PGND2
TDA8580J
1000
F
16/40 V
100 nF
10
k
100
F
10 V
220 nF
+
5 V
4 or 8
4 or 8
VinL
220 nF
VinR
VP
VP1
VP2
4.7
F
R1
(1)
R2
Vswitching
(9 V typical)
SW1
Fig.28 Stereo bridge-tied load application; V
P
18 V.
(1) R1 and R2 values depend on V
switching
applied; the value of R1 and R2 connected in parallel should be minimum 10 k
.
2000 Apr 18
19
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth
MGU077
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
-
+
-
+
-
+
-
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
-
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
2
16
PGND1
PGND2
TDA8580J
1000
F
16/40 V
100 nF
10
k
100
F
10 V
220 nF
+
5 V
4 or 8
4 or 8
4 or 8
VinR
220 nF
VinL
220 nF
VinL
FRONT
220 nF
VinR
4 or 8
REAR
VP
VP1
VP2
4.7
F
R1
(1)
R2
Vswitching
(9 V typical)
2
220 nF
SW1
Fig.29 Quad single-ended application; V
P
18 V.
(1) R1 and R2 values depend on V
switching
applied; the value of R1 and R2 connected in parallel should be minimum 10 k
.
2000 Apr 18
20
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth
MGU076
30 k
45 k
45
k
45
k
60
k
60
k
BUFFER
INTERFACE
DIAGNOSTIC
5
13
6
MUTE
STANDBY
DIAG
BUFFER
Vpx
Vpx
OA
45 k
-
-
+
+
-
+
-
+
OA
V/I
-
-
+
+
V/I
45 k
60
k
60
k
OA
45 k
2
-
-
+
-
+
+
OA
V/I
-
-
+
+
V/I
7
IN1
8
IN2
10
12
11
IN3
IN5
IN4
1
4
9
14
220 nF
17
OUT4
+
OUT3
-
BUFFER
OUT2
-
OUT1
+
3
15
2
16
PGND1
PGND2
TDA8580J
1000
F
16/40 V
100 nF
10
k
100
F
10 V
220 nF
+
5 V
4 or 8
4 or 8
4 or 8
VinR
220 nF
VinL
220 nF
VinR
VP
VP1
VP2
4.7
F
R1
(1)
R2
Vswitching
(9 V typical)
SW1
Fig.30 Dual single-ended and one bridge-tied load application; V
P
18 V.
(1) R1 and R2 values depend on V
switching
applied; the value of R1 and R2 connected in parallel should be minimum 10 k
.
2000 Apr 18
21
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth
MGS699
(3)
OUT1
+
1
IN1
7
(1)
OUT2
-
4
IN2
inputs
VP
Vswitching
(9 V typical)
8
3
15
2
16
OUT3
-
14
IN3
10
OUT4
+
+
5 V
17
IN4
11
BUFFER
9
IN5
12
DIAG
PGND2
PGND1
6
STANDBY
SW1
5
R2
15 k
(3)
R1
45 k
2
(2)
10 k
1000
F
100
F
4.7
F
100 nF
220 nF
(2)
TDA8580J
VP1
VP2
Fig.31 Application 1; supply voltage range 8 V < V
P
18 V; 1-pin and 2-pin operation.
(1) Load conditions: quad SE (4 x 4
), or dual BTL (2 x 8
)
, or dual SE (2 x 4
) and one BTL (1 x 8
).
(2) RC combination not required in BTL mode.
(3) R1 and R2 values depend on V
switching
applied; the value of R1 and R2 connected in parallel should be minimum 10 k
.
handbook, full pagewidth
MGS697
(3)
OUT1
+
1
IN1
7
(1)
OUT2
-
4
IN2
inputs
VP
Vswitching
(9 V typical)
8
3
VP1
VP2
15
2
16
OUT3
-
14
IN3
10
OUT4
+
17
IN4
11
BUFFER
9
IN5
12
MUTE
13
DIAG
PGND2
PGND1
3.6 V
6
STANDBY
5
R2
15 k
(3)
R1
45 k
2
(2)
1000
F
100
F
4.7
F
100 nF
220 nF
(2)
TDA8580J
SW1
Fig.32 Application 2; supply voltage range 18 V < V
P
24 V; 1-pin operation.
(1) Load conditions: quad SE (4 x 4
), or dual BTL (2 x 8
)
, or dual SE (2 x 4
) and one BTL (1 x 8
).
(2) RC combination not required in BTL mode.
(3) R1 and R2 values depend on V
switching
applied; the value of R1 and R2 connected in parallel should be minimum 10 k
.
2000 Apr 18
22
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
handbook, full pagewidth
MGS698
OUT1
+
1
IN1
7
(1)
OUT2
-
4
IN2
inputs
VP
8
3
15
2
16
OUT3
-
14
IN3
10
OUT4
+
17
IN4
11
BUFFER
9
IN5
12
DIAG
PGND2
PGND1
6
STANDBY
5
10 k
MSB
MUTE
13
2
(2)
1000
F
100
F
4.7
F
100 nF
220 nF
(2)
TDA8580J
10 k
MUTE
4.7
F
VP1
VP2
Fig.33 Application 3; supply voltage range 18 V < V
P
24 V; 2-pin operation.
(1) Load conditions: quad SE (4 x 4
), or dual BTL (2 x 8
)
, or dual SE (2 x 4
) and one BTL (1 x 8
)
(2) RC combination not required in BTL mode.
INTERNAL PIN CONFIGURATION
PIN
NAME
EQUIVALENT CIRCUIT
7, 8, 10, 11
and 12
Inputs
1, 4, 9, 14
and 17
Outputs
Vint
7, 8, 10 and 11
MGS723
Vint
12
MGL849
VP
0.5 VP
1, 4, 9, 14, and 17
2000 Apr 18
23
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
5
STANDBY
13
MUTE
6
DIAG
PIN
NAME
EQUIVALENT CIRCUIT
MGL848
VP
5
4 V
Vint
MGS724
13
MGS722
6
2000 Apr 18
24
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-1
0
5
10 mm
scale
D
L
E
A
c
A
2
L
3
Q
w
M
b
p
1
d
D
Z
e
e
x
h
1
17
j
Eh
non-concave
97-12-16
99-12-17
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
view B: mounting base side
m
2
e
v
M
B
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
mm
17.0
15.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
v
0.8
12.2
11.8
1.27
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
12.4
11.0
Q
j
0.4
w
0.03
x
2000 Apr 18
25
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our
"Data Handbook IC26; Integrated Circuit
Packages" (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
PACKAGE
SOLDERING METHOD
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable
(1)
2000 Apr 18
26
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2000 Apr 18
27
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com
2000
69
Philips Semiconductors a worldwide company
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands
753503/25/03/pp
28
Date of release:
2000 Apr 18
Document order number:
9397 750 05478
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