Document Outline
- FEATURES
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- APPLICATIONS
- ORDERING INFORMATION
- BLOCK DIAGRAM
- PINNING
- FUNCTIONAL DESCRIPTION
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- QUALITY SPECIFICATION
- CHARACTERISTICS
- APPLICATION INFORMATION
- PACKAGE OUTLINES
- SOLDERING
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
File under Integrated Circuits, IC11
2001 Apr 25
INTEGRATED CIRCUITS
TEA1610P; TEA1610T
Zero-voltage-switching
resonant converter controller
2001 Apr 25
2
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
FEATURES
Integrated high voltage level-shift function
Integrated high voltage bootstrap diode
Transconductance error amplifier for ultra high-ohmic
regulation feedback
Latched shut-down circuit for overcurrent and
overvoltage protection
Low start-up current (green function)
Adjustable minimum and maximum frequencies
Adjustable dead time
Undervoltage lockout.
GENERAL DESCRIPTION
The TEA1610 is a monolithic integrated circuit
implemented in a high-voltage DMOS process. The circuit
is a high voltage controller for a zero-voltage switching
resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge
configuration. It also includes a level-shift circuit, an
oscillator with accurately-programmable frequency range,
a latched shut-down function and a transconductance
error amplifier.
To guarantee an accurate 50% switching duty factor, the
oscillator signal passes through a divide-by-two flip-flop
before being fed to the output drivers.
The circuit is very flexible and enables a broad range of
applications for different mains voltages.
APPLICATIONS
TV and monitor power supplies
High voltage power supplies.
MGU336
handbook, halfpage
TEA1610
HALF-
BRIDGE
CIRCUIT
RESONANT
CONVERTER
MOSFET
SWITCH
bridge voltage
supply
(high side)
VHS
VDD
power ground
signal
ground
Fig.1 Basic configuration.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
HS
bridge voltage supply (high side)
600
V
I
GH(source)
; I
GL(source)
gate driver source current
-
225
mA
I
GH(sink)
; I
GL(sink)
gate driver sink current
300
mA
f
bridge(max)
maximum bridge frequency
C
f
= 100 pF (see
Fig.10)
550
kHz
V
I(CM)
error amplifier common mode input voltage
2.5
V
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TEA1610P
DIP16
plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
TEA1610T
SO16
plastic small outline package; 16 leads; body width 3.9 mm;
low stand-off height
SOT109-2
2001 Apr 25
3
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
BLOCK DIAGRAM
handbook, full pagewidth
MGU337
TEA1610
1
2
3
8
7
6
10
4
15
16
14
13
12
11
9
I
-
I
+
VCO
PGND
SH
GH
2.5 V
VDD(F)
SGND
GL
VDD
IFS
CF
IRS
SD
VREF
3 V
0.6 V
2.33 V
BOOTSTRAP
SUPPLY
LOGIC
OSCILLATOR
LEVEL
SHIFTER
HIGH SIDE
DRIVER
LOW SIDE
DRIVER
gm
reset
shut-down
start-up
start/stop oscillation
ERROR
AMPLIFIER
2
2
5
n.c.
Icharge
Idischarge
Fig.2 Block diagram.
2001 Apr 25
4
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
PINNING
SYMBOL PIN
DESCRIPTION
I
-
1
error amplifier inverting input
I+
2
error amplifier non-inverting input
VCO
3
error amplifier output
PGND
4
power ground
n.c.
5
not connected (high voltage spacer)
SH
6
high side switch source
GH
7
gate of the high side switch
V
DD(F)
8
floating supply voltage for the high side
driver
SGND
9
signal ground
GL
10
gate of the low side switch
V
DD
11
supply voltage
IFS
12
oscillator discharge current input
CF
13
oscillator capacitor
IRS
14
oscillator charge current input
SD
15
shut-down input
V
REF
16
reference voltage
handbook, halfpage
TEA1610P
MGU338
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I
-
I
+
VCO
PGND
n.c.
SH
GH
VDD(F)
SGND
GL
VDD
IFS
CF
IRS
SD
VREF
Fig.3 Pin configuration: TEA1610P.
handbook, halfpage
TEA1610T
MGU347
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
I
-
I
+
VCO
PGND
n.c.
SH
GH
VDD(F)
SGND
GL
VDD
IFS
CF
IRS
SD
VREF
Fig.4 Pin configuration: TEA1610T.
2001 Apr 25
5
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
FUNCTIONAL DESCRIPTION
Start-up
When the applied voltage at V
DD
reaches V
DD(initial)
(see
Fig.5), the low side power switch is turned-on while the
high side power switch remains in the non-conducting
state. This start-up output state guarantees the initial
charging of the bootstrap capacitor (C
boot
) used for the
floating supply of the high side driver.
During start-up, the voltage on the frequency capacitor (C
f
)
is zero and defines the start-up state. The output voltage
of the error amplifier is kept constant (typ. 2.5 V) and
switching starts at about 80% of the maximum frequency
at the moment pin V
DD
reaches the start level.
The start-up state is maintained until V
DD
reaches the start
level (13.5 V), the oscillator is activated and the converter
starts operating.
handbook, full pagewidth
MGT998
t
GH-SH
GL
0
0
0
VDD
VDD(start)
VDD(initial)
Fig.5 Start-up.
2001 Apr 25
6
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Oscillator
The internal oscillator is a current-controlled oscillator that
generates a sawtooth output. The frequency of the
sawtooth is determined by the external capacitor C
f
and
the currents flowing into the IFS and IRS pins.
The minimum frequency and the dead time are set by the
capacitor C
f
and resistors R
f(min)
and R
dt
. The maximum
frequency is set by resistor R
f
(see Fig.10). The oscillator
frequency is exactly twice the bridge frequency to achieve
an accurate 50% duty factor. An overview of the oscillator
and driver signals is given in Fig.6.
handbook, full pagewidth
MGT999
t
dead time (high to low)
dead time (low to high)
CF
GH-SH
GL
0
0
Fig.6 Oscillator and driver signals.
2001 Apr 25
7
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Dead time resistor R
dt
(see Fig.10)
The dead time resistor R
dt
is connected between the 3 V
reference pin (V
REF
) and the IFS current input pin. The
voltage on the IFS pin is kept constant at a temperature
independant value of 0.6 V. The current that flows into the
IFS pin is determined by the value of resistor R
dt
and the
2.4 V voltage drop across this resistor. The IFS input
current equals the discharge current of capacitor C
f
and
determines the falling slope of the oscillator.
The falling slope time is used to create a dead time (t
dt
)
between two successive switching actions of the
half-bridge switches:
Minimum frequency resistor (see Fig.10)
The R
f(min)
resistor is connected between the V
REF
pin (3 V
reference voltage) and the IRS current input (held at a
temperature independant voltage level of 0.6 V). The
charge current of the capacitor C
f
is twice the current
flowing into the IRS pin.
The R
f(min)
resistor has a voltage drop of 2.4 V and its
resistance defines the minimum charge current (rising
slope) of the C
f
capacitor if the control current is zero. The
minimum frequency is defined by this minimum charge
current (I
IRS1
) and the discharge current:
Maximum frequency resistor
The output voltage is regulated by changing the frequency
of the half-bridge converter. The maximum frequency is
determined by the R
f
resistor which is connected between
the error amplifier output VCO and the oscillator current
input pin IRS. The current that flows through the R
f
resistor (I
IRS2
) is added to the current flowing through the
R
f(min)
resistor. As a result, the charge current I
CF
increases and the oscillation frequency increases. As the
falling slope of the oscillator is constant, the relationship
between the output frequency and the charge current is
not a linear function (see Figs 7 and 9):
The maximum output voltage of the error amplifier and the
value of R
f
determine the maximum frequency:
Bridge frequency accuracy is optimum in the low
frequency region. At higher frequencies both the dead time
and the oscillator frequency show a decay.
The frequency of the oscillator depends on the value of
capacitor C
f
, the peak-to-peak voltage swing V
Cf
and the
charge and discharge currents. However, at higher
frequencies the accuracy decreases due to delays in the
circuit.
I
IFS
2.4 V
R
dt
--------------
=
t
dt
C
f
V
Cf
I
IFS
-------------------------
=
t
IFS
t
dt
=
I
IRS1
2.4 V
R
f min
(
)
-----------------
=
t
IRS1
C
f
V
Cf
2
I
IRS1
-------------------------
=
f
min
1
t
dt
t
IRS1
+
------------------------
=
I
IRS2
V
VCO
0.6
R
f
-----------------------------
=
t
IRS2
C
f
V
Cf
I
IRS1
I
IRS2
+
--------------------------------
2
=
I
IRS2 max
(
)
V
VCO max
(
)
0.6
R
f
------------------------------------------
=
t
IRS min
(
)
C
f
V
Cf
I
IRS1
I
IRS2(max)
+
-------------------------------------------
2
=
f
max
1
T
osc
----------
=
T
osc
t
IRS min
(
)
t
IFS
+
=
handbook, halfpage
MGW001
fosc
0
IIRS
fosc(max)
fosc(start)
fosc(min)
Fig.7 Frequency range.
2001 Apr 25
8
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Error amplifier
The error amplifier is a transconductance amplifier. Thus
the output current at pin VCO is determined by the
amplifier transconductance and the differential voltage on
input pins I
+
and I
-
. The output current I
VCO
is fed to the
IRS input of the current-controlled oscillator.
The source capability of the error amplifier increases
current in the IRS pin when the differential input voltage is
positive. Therefore the minimum current is determined by
resistor R
f(min)
and the minimum frequency setting is
independent of the characteristics of the error amplifier.
The error amplifier has a maximum output current of
0.5 mA for an output voltage up to 2.5 V. If the source
current decreases, the oscillator frequency also decreases
resulting in a higher regulated output voltage.
During start-up, the output voltage of the amplifier is held
at a constant value of 2.5 V. This voltage level defines,
together with resistor R
f
, the initial switching frequency of
the TEA1610 after start-up.
Shut-down
The shut-down input (SD) has an accurate threshold level
of 2.33 V. When the voltage on input SD reaches 2.33 V,
both power switches immediately switch off and the
TEA1610 enters shut-down mode.
During shut-down mode, pin V
DD
is clamped by an internal
Zener diode at 12.0 V with 1 mA input current. This clamp
prevents V
DD
rising above the rating of 14 V due to low
supply current to the TEA1610 in shut-down mode.
When the TEA1610 is in the shut-down mode, it can be
activated again only by lowering V
DD
below the V
DD
reset
level (5.3 V typical). The shut-down latch is then reset and
a new start-up cycle can commence (see Fig.8).
handbook, full pagewidth
MGW002
oscillation
shut-
down
VDD
SD
GH-SH
GL
t
0
0
VDD(start)
VDD(sdc)
VDD(reset)
VSD(th)
supply
off
start-up
oscillation
Fig.8 Shut-down.
2001 Apr 25
9
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages are referred to the ground pins
which must be interconnected externally; positive currents flow into the IC.
Notes
1. Human body model class 2: equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
2. Machine model class 2: equivalent to discharging a 200 pF capacitor through a 0.75
H coil and 10
resistor.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
"SNW-FQ-611-E".
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Voltages
V
SH
high side driver voltage
0
600
V
V
DD
supply voltage
0
14
V
V
I+
amplifier non-inverting input voltage
0
5
V
V
I
-
amplifier inverting input voltage
0
5
V
V
SD
shut-down input voltage
0
5
V
Currents
I
IFS
oscillator falling slope input current
-
1
mA
I
IRS
oscillator rising slope input current
-
1
mA
I
REF
V
REF
source current
-
-
2
mA
Power and temperature
P
tot
total power dissipation
T
amb
< 70
C
-
0.8
W
T
amb
ambient temperature
operating
-
25
+70
C
T
stg
storage temperature
-
25
+150
C
Handling
V
ES
electrostatic handling voltage
note 1
-
2000
V
note 2
-
200
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
100
K/W
R
th(j-pin)
thermal resistance from junction to pin
50
K/W
2001 Apr 25
10
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
CHARACTERISTICS
All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC;
V
DD
= 13 V and T
amb
= 25
C; tested in the circuit of Fig.10; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
High voltage pins V
DD(F)
, GH and SH
I
L
leakage current
V
DD(F)
, V
GH
and V
SH
= 600 V
-
-
30
A
Supply pin V
DD
V
DD(initial)
supply voltage for defined driver
output
low side on; high side off
-
4
5
V
V
DD(start)
start oscillator voltage
12.9
13.4
13.9
V
V
DD(stop)
stop oscillator voltage
9.0
9.4
9.8
V
V
DD(hys)
start-stop hysteresis voltage
3.8
4.0
4.2
V
V
DD(sdc)
shut-down clamp voltage
low side off; high side off;
I
DD
= 1 mA
11.0
12.0
13.0
V
V
DD(reset)
reset voltage
4.5
5.3
6.0
V
I
DD
supply current:
start-up
low side on; high side off
130
180
220
A
operating
C
f
= 100 pF; I
IFS
= 0.5 mA;
I
IRS
= 50
A; C
o
= 200 pF;
note 1
-
2.4
-
mA
shut-down
low side off; high side off;
V
DD
= 9 V
-
130
180
A
Reference voltage pin V
REF
V
REF
reference voltage
I
REF
= 0 mA
2.9
3.0
3.1
V
I
REF
current capability
source only
-
1.0
-
-
mA
Z
o(VREF)
output impedance
I
REF
=
-
1 mA
-
5.0
-
temperature coefficient
I
REF
= 0; T
j
= 25 to 150
C
-
-
0.3
-
mV/K
Current controlled oscillator pins IRS, IFS, CF
I
CF(ch)(min)
minimum CF charge current
I
IRS
= 15
A; V
CF
= 2 V
28
30
32
A
I
CF(ch)(max)
maximum CF charge current
I
IRS
= 200
A; V
CF
= 2 V
340
380
420
A
V
IRS
pin IRS voltage
I
IRS
= 200
A
570
600
630
mV
I
CF(dis)(min)
minimum CF discharge current
I
IRS
= 50
A; V
CF
= 2 V
47
50
53
A
I
CF(dis)(max)
maximum CF discharge current
I
IFS
= 1 mA; V
CF
= 2 V
0.93
0.98
1.03
mA
V
IFS
pin IFS voltage
I
IFS
= 1 mA
570
600
630
mV
f
bridge(min)
minimum bridge frequency (for
stable operation)
C
F
= 100 pF; I
IFS
= 0.5 mA;
I
IRS
= 50
A;
188
200
212
kHz
f
bridge(max)
maximum bridge frequency
C
f
= 100 pF; I
IFS
= 1 mA;
I
IRS
= 200
A;
;
note 2
450
500
550
kHz
V
REF
T
------------------
f
bridge
f
osc
2
--------
=
f
bridge
f
osc
2
--------
=
2001 Apr 25
11
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Notes
1. Supply current I
DD
will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs.
Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Q
g(tot)
= 55 nC typ.) and these
will increase the supply current at 150 kHz according to the following formula:
I
DD
= 2
Q
g(tot)
f
bridge
= 2
55 nC
150 kHz = 16.5 mA.
2. The frequency of the oscillator depends on the value of capacitor C
f
, the peak-to-peak voltage swing V
CF
and the
charge/discharge currents I
CF(ch)
and I
CF(dis)
.
V
CF(L)
CF trip level LOW
DC level
-
1.27
-
V
V
CF(H)
CF trip level HIGH
DC level
-
3.0
-
V
V
Cf(p-p)
C
f
voltage (peak-to-peak value)
1.63
1.73
1.83
V
t
dt
dead time
C
f
= 100 pF; I
IFS
= 0.5 mA;
I
IRS
= 50
A
0.37
0.40
0.43
s
Output drivers
I
GH(source)
high side output source current
V
DD(F)
= 13 V; V
SH
= 0; V
GH
= 0
-
135
-
180
-
225
mA
I
GH(sink)
high side output sink current
V
DD(F)
= 13 V; V
SH
= 0;
V
GH
= 13 V
-
300
-
mA
I
GL(source)
low side output source current
V
GL
= 0
-
135
-
180
-
225
mA
I
GL(sink)
low side output sink current
V
GL
= 14 V
-
300
-
mA
V
GH(H)
high side output voltage HIGH
V
DD(F)
= 13 V; V
SH
= 0;
I
GH
= 10 mA
10.8
12
-
V
V
GH(L)
high side output voltage LOW
V
DD(F)
= 13 V; V
SH
= 0;
I
GH
= 10 mA
-
0.2
0.5
V
V
GL(H)
low side output voltage HIGH
I
GL
= 10 mA
10.8
12
-
V
V
GL(L)
low side output voltage LOW
I
GL
= 10 mA
-
0.2
0.5
V
V
d(boot)
bootstrap diode voltage drop
I = 5 mA
1.5
1.8
2.1
V
Shut-down input pin SD
I
SD
input current
V
SD
= 2.33 V
0
0.2
0.5
A
V
SD(th)
threshold level
2.26
2.33
2.40
V
Error amplifier pins I
+
, I
-
, VCO
I
I(CM)
common mode input current
V
I(CM)
= 1 V
-
-
0.1
-
0.5
A
V
I(CM)
common mode input voltage
-
-
2.5
V
V
I(offset)
input offset voltage
V
I(CM)
= 1 V; I
VCO
=
-
10 mA
-
2
0
+2
mV
g
m
transconductance
V
I(CM)
= 1 V; source only
-
330
-
A/mV
A
o
open loop gain
R
L
= 10 k
to GND; V
I(CM)
= 1 V
-
70
-
dB
GB
gain bandwidth product
R
L
= 10 k
to GND; V
I(CM)
= 1 V
-
5
-
MHz
V
VCO(max)
maximum output voltage
operating; R
L
= 10 k
to GND
3.2
3.6
4.0
V
I
VCO(max)
maximum output current
operating; V
VCO
= 1 V
-
0.4
-
0.5
-
0.6
mA
V
VCO(start)
output voltage during start-up
I
VCO
= 0.3 mA
2.30
2.50
2.70
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2001 Apr 25
12
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
APPLICATION INFORMATION
An application example of a zero-voltage-switching
resonant converter application using TEA1610 is shown in
Fig.10. In the off-mode the V
DD
voltage is pulled below the
stop level of 9.4 V by the 7.5 V Zener diode and the
half-bridge is not driven. In the on-mode the TEA1610
starts-up with a high-ohmic bleeder resistor. After passing
the level for start of oscillation, the TEA1610 is in normal
operating mode and consumes the normal supply current
delivered by the 12 V supply. The dead time is set by R
dt
and C
f
. The minimum frequency is adjusted by R
f(min)
and
the frequency range is set by R
f
. The output voltage is
adjusted with a potentiometer connected to the inverting
input of the error amplifier and is regulated via a feedback
circuit. The shut-down input is used for overvoltage
protection. To prevent interference, filter capacitors can be
added on pins IFS, IRS and V
REF
. The maximum value of
each filter capacitor is 100 pF.
Practical values of the application example are given in
Fig.9 in which the measured oscillator frequency with
capacitor C
f
= 220 pF is shown as a function of the charge
current I
IRS
. Note that the slope of the measured frequency
differs from the theoretical frequency (frequency set)
calculated as described in Section "Maximum frequency
resistor".
The measured dead time is directly related to charge
current (total current flowing into pin IRS) and therefore to
oscillator frequency.
The measured frequency graph can be used to determine
the required R
f
resistor for a certain maximum frequency
in an application with the same value of capacitor C
f
.
More application information can be found in application
note
"AN99011".
handbook, full pagewidth
200
IIRS (
A)
800
fosc
(kHz)
tdt
(ns)
0
0
60
80
100
120
40
20
MGW003
140
160
180
200
400
600
1200
0
300
600
900
frequency measured
frequency set
dead time (high to low)
dead time (low to high)
Fig.9 Oscillator frequency and measured dead time as functions of charge current I
IRS
.
f
osc
at I
IFS
= 500
A.
f
osc
= 2
f
bridge
.
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2001
Apr
25
13
Philips Semiconductors
Product specification
Zero-v
oltage-s
witching
resonant con
v
e
r
ter controller
TEA1610P; TEA1610T
handbook, full pagewidth
MGU339
TEA1610
1
2
3
8
7
6
10
4
15
16
14
13
12
11
9
I
-
I
+
VCO
PGND
SH
GH
Cboot
VDD(F)
Lp
Lr(ext)
Cp
Cr
SGND
12 V
7.5 V
bridge voltage supply (high side)
on/off
regulator
feedback
signal
ground
GL
VDD
RVDD
CVDD
IFS
CF
IRS
R
f
Rf(min)
Rdt
SD
overvoltage protection
output voltage
power ground
SGND
VREF
CSS
Cf
3 V
0.6 V
2.33 V
bootstrap diode
SUPPLY
LOGIC
OSCILLATOR
LEVEL
SHIFTER
HIGH SIDE
DRIVER
LOW SIDE
DRIVER
gm
ERROR
AMPLIFIER
2
Fig.10 Application diagram.
2001 Apr 25
14
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
PACKAGE OUTLINES
UNIT
A
max.
1
2
b
1
c
E
e
M
H
L
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
SOT38-1
95-01-19
99-12-27
A
min.
A
max.
b
max.
w
M
E
e
1
1.40
1.14
0.055
0.045
0.53
0.38
0.32
0.23
21.8
21.4
0.86
0.84
6.48
6.20
0.26
0.24
3.9
3.4
0.15
0.13
0.254
2.54
7.62
0.30
8.25
7.80
0.32
0.31
9.5
8.3
0.37
0.33
2.2
0.087
4.7
0.51
3.7
0.15
0.021
0.015
0.013
0.009
0.01
0.10
0.020
0.19
050G09
MO-001
SC-503-16
M
H
c
(e )
1
M
E
A
L
seating plane
A
1
w
M
b
1
e
D
A
2
Z
16
1
9
8
b
E
pin 1 index
0
5
10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
(1)
(1)
D
(1)
Z
DIP16: plastic dual in-line package; 16 leads (300 mil); long body
SOT38-1
2001 Apr 25
15
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.65
0.20
0.05
1.45
1.25
0.25
0.49
0.36
0.25
0.19
10.0
9.8
4.0
3.8
1.27
6.2
5.8
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
1.0
0.4
SOT109-2
076E07
MS-012
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
8
9
1
16
y
pin 1 index
0.065
0.008
0.002
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.39
0.38
0.16
0.15
0.050
1.05
0.041
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.25
0.01
0.004
0.039
0.016
0
2.5
5 mm
scale
SO16: plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height
SOT109-2
97-05-22
99-12-27
2001 Apr 25
16
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
SOLDERING
Introduction
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. Wave soldering can still be used
for certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended.
Through-hole mount packages
S
OLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
M
ANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
Surface mount packages
R
EFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 220
C for
thick/large packages, and below 235
C for small/thin
packages.
W
AVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
M
ANUAL SOLDERING
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320
C.
2001 Apr 25
17
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
Suitability of IC packages for wave, reflow and dipping soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
MOUNTING
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
DIPPING
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
suitable
(2)
-
suitable
Surface mount
BGA, HBGA, LFBGA, SQFP, TFBGA
not suitable
suitable
-
HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, HVQFN, SMS
not suitable
(3)
suitable
-
PLCC
(4)
, SO, SOJ
suitable
suitable
-
LQFP, QFP, TQFP
not recommended
(4)(5)
suitable
-
SSOP, TSSOP, VSO
not recommended
(6)
suitable
-
2001 Apr 25
18
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Apr 25
19
Philips Semiconductors
Product specification
Zero-voltage-switching
resonant converter controller
TEA1610P; TEA1610T
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2001
72
Philips Semiconductors a worldwide company
For all other countries apply to: Philips Semiconductors,
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Printed in The Netherlands
613502/01/pp
20
Date of release:
2001 Apr 25
Document order number:
9397 750 07993
PDF 
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