1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

FEATURES

The tuning system has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio

The tuning quality is superior and requires no IF-counter
for stop-detection; it is insensitive to ceramic filter
tolerances

In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible

The local (internal) controller function facilitates reduced
and simplified microcontroller software

The high integration level (radio and tuning synthesizer
on one chip) means fewer external components with
regard to the communication between the radio and the
microcontroller (90% less components compared to the
digital tuning application of a radio IC with external PLL
tuning function) and a simple and small printed-circuit
board

There will be no application considerations for the tuning
system, with regards to quality and high integration
level, since there will be no external 110 MHz buffers,
loop filter or false lock elimination

The inherent FUZZY LOGIC behaviour of the Self
Tuned Radio (STR), which mimics hand tuning, yields a
potentially fast yet reliable tuning operation

The level of the incoming signal at which the radio must
lock is software programmable

Two programmable ports

High selectivity with distributed IF gain

Soft mute

Signal dependent stereo-blend

High impedance MOSFET input on AM

Wide supply voltage range of 2.5 to 12 V

Low current consumption 18 mA at AM and FM
(including tuning synthesizer)

High input sensitivity

Low output distortion

Due to the new tuning concept, the tuning is
independent of the channel spacing.

GENERAL DESCRIPTION

The TEA5757; TEA5759 is a 44-pin integrated AM/FM
stereo radio circuit including a novel tuning concept.
The radio part is based on the TEA5712.

The TEA5757 is used in FM-standards in which the local
oscillator frequency is above the radio frequency
(e.g. European and American standards).

The TEA5759 is the version in which the oscillator
frequency is below the radio frequency
(e.g. Japanese standard).

The new tuning concept combines the advantages of hand
tuning with electronic facilities and features. User
`intelligence' is incorporated into the tuning algorithm and
an improvement of the analog signal processing is used for
the AFC function.

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

TEA5757H

QFP44

plastic quad flat package; 44 leads (lead length 1.3 mm); body
10

1.75 mm

SOT307-2

TEA5759H

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

QUICK REFERENCE DATA

Notes

1. V

CC1

= 3 V; V

CC2

= 12 V; V

DDD

= 3 V; f

= 1 MHz; m = 0.3; f

= 1 kHz; measured in Fig.9 with S1 in position A and S2

in position B; V

refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9).

2. V

CC1

= 3 V; V

CC2

= 12 V; V

DDD

= 3 V; f

= 100 MHz;

= 22.5 kHz; f

= 1 kHz; measured in Fig.9 with S2, S3

and S5 in position A; V

refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9).

3. V

CC1

= 3 V; V

CC2

= 12 V; V

DDD

= 3 V; V

i3(L + R)

= 155 mV; V

pilot

= 15.5 mV; f

= 1 kHz; measured in Fig.9 with S2

and S3 in position B.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

CC1

supply voltage

2.5

CC2

supply voltage for tuning

tune

tuning voltage

0.7

CC2

0.75

CC1

supply current

AM mode

FM mode

supply current

AM mode

3.3

FM mode

2.7

CC2

supply current for tuning in preset
mode (band-end to band-end)

800

amb

ambient temperature

+60

AM performance; note 1

AF output voltage

= 5 mV

RF sensitivity input voltage

(S+N)/N = 26 dB

THD

total harmonic distortion

= 1 mV

0.8

2.0

FM performance; note 2

AF output voltage

= 1 mV

RF limiting sensitivity

3 dB;

is 0 dB at V

= 1 mV

0.4

1.2

3.8

THD

total harmonic distortion

IF filter
SFE10.7MS3A20K-A

0.3

0.8

MPX performance; note 3

channel separation

1999

Aug

Philips Semiconductors

Product specification

Self T

uned Radio (STR)

TEA5757; TEA5759

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BLOCK DIA

GRAM

handbook, full pagewidth

PRESCALER

PROGRAMMABLE

COUNTER

STABILIZER

WINDOW

DETECTOR

LAST-STATION

MEMORY

AM/FM

INDICATOR

IN-LOCK

DETECTOR

PILOT

DETECTOR

CHARGE

PUMP

MULTIPLEXER

CRYSTAL

OSCILLATOR

SHIFT REGISTER

FRONT-END

OSCILLATOR

FM
IF2

FM
IF1

MIXER

SEQUENTIAL

CIRCUIT

STATUS

FRONT-END

OSCILLATOR

DETECTOR

V/I

CONVERTER

MIXER

AGC

AFC

hard mute

level

PLL

DECODER

MATRIX

SDS

MUTE

down
level

RFGND

DATA

BUS-CLOCK

WRITE-ENABLE

FM-RFI

VSTAB(A)
VSTAB(B)

AM-RFI

XTAL

RIPPLE

23
1

AGC

AM-IFI/O2

AM-MIXER

AMOSC

AM-IFI1

27
29

MO/ST

AFRO

MUTE

AFC(n)
AFC(p)
AFC

VCO

LFI

PILFIL

AFLO

stereo

mono

38 kHz

19 kHz

FM-IFI1

FM-IFI2

FM-IFO1

FM-MIXER

FMOSC

FM-RFO

VCC1

VDDD

TEA5757;

TEA5759

DGND

P1
P0

TUNE

RFGND

MPXI

AFO

VCC2

IFGND

FSI

FMDEM

MHA111

Fig.1 Block diagram.

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

PINNING

SYMBOL

PIN

DESCRIPTION

RIPPLE

ripple capacitor input

AM-RFI

AMRF input

FM-RFO

parallel tuned FMRF circuit to ground

RFGND

RF ground and substrate

FMOSC

parallel tuned FM-oscillator circuit to ground

AMOSC

parallel tuned AM-oscillator circuit to ground

CC1

supply voltage

TUNE

tuning current output

VCO

voltage controlled oscillator input

AFO

AM/FM AF output (output impedance typical 5 k

)

MPXI

stereo decoder input (input impedance typical 150 k

)

LFI

loop-filter input

MUTE

mute input

AFLO

left channel output (output impedance typical 4.3 k

)

AFRO

right channel output (output impedance typical 4.3 k

)

PILFIL

pilot detector filter input

IFGND

ground of IF, detector and MPX stage

FMDEM

ceramic discriminator input

AFC

(n)

AFC negative output

AFC

(p)

AFC positive output

FSI

field-strength indicator

CC2

supply voltage for tuning

DDD

digital supply voltage

MO/ST

mono/stereo and tuning indication output

XTAL

crystal input

DGND

digital ground

BUS-CLOCK

bus-clock input

DATA

bus data input/output

WRITE-ENABLE

bus write-enable input

programmable output port (P0)

programmable output port (P1)

AFC

450 kHz LC-circuit

FM-IFI2

FMIF input 2 (input impedance typical 330

)

STAB(B)

internal stabilized supply voltage (B)

FM-IFO1

FMIF output 1 (output impedance typical 330

)

AM-IFI/O2

input/output to IF-Tank (IFT); output: current source

FM-IFI1

FMIF input 1 (input impedance typical 330

)

STAB(A)

internal stabilized supply voltage (A)

FM-MIXER

ceramic filter output (output impedance typical 330

)

AM-MIXER

open-collector output to IFT

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

FUNCTIONAL DESCRIPTION

The TEA5757; TEA5759 is an integrated AM/FM stereo
radio circuit including digital tuning and control functions.

The radio

The AM circuit incorporates a double balanced mixer,
a one-pin low-voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.

The AM input is designed to be connected to the top of
a tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the
AM front-end.

The first AM selectivity can be an IF-Tank (IFT) as well as
an IFT combined with a ceramic filter; the second one is
an IFT.

The FM circuit incorporates a tuned RF stage, a double
balanced mixer, a one-pin oscillator and is designed for
distributed IF ceramic filters. The FM quadrature detector
uses a ceramic resonator (or LC).

The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.

Tuning

The tuning concept of the Self Tuned Radio (STR) is
based on FUZZY LOGIC: it mimics hand tuning (hand
tuning is a combination of coarse and fine tuning to the
qualitatively best frequency position). As a consequence
the tuning system is very fast.

The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated; so there are
only a few external components needed.

The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (BUS-CLOCK, DATA
and WRITE-ENABLE). The microcontroller must basically
give two instructions:

Preset operation

Search operation.

RESET OPERATION

In preset mode, the microcontroller has to load information
such as frequency band, frequency and mono/stereo. This
information has to be sent via the bus to the STR.
The internal algorithm controls the tuning sequence as
follows:

1. The information is loaded into the shift register, the

last-station memory and the counter.

2. The Automatic Frequency Control (AFC) is

switched off.

3. The counter starts counting the frequency and the

tuning voltage is varied until the desired frequency
roughly equals the real frequency.

4. The AFC is then switched on and the counter is

switched off.

5. The real frequency is more precisely tuned to the

desired frequency.

After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).

In the event of fading or pulling the in-lock signal becomes
logic 0 and the synthesizer will be switched on again and
the algorithm will be repeated.

EARCH OPERATION

During a search operation, the only action the
microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to the
STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
the found station will be counted by the counter and written
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller.
The microcontroller decides whether the frequency is
within the desired frequency band. If so, this frequency can
be stored under a preset and if not, a new search action
should be started.

To ensure that the search function operates correctly
under all conditions the following search sequence must
be applied:

Store the current frequency in the memory

Issue the search command

Wait for data valid and read the new frequency

If the new frequency is the same as the stored
frequency, issue a pre-set step (e.g. 50 kHz) and start
the search sequence again.

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

Description of the bus

The TEA5757; TEA5759 radio has a bus which consists of
three wires, as shown in Table 1.

Table 1

Bus signals

These three signals, together with the mono/stereo pin
(MO/ST; pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the BUS-CLOCK, as shown in Table 2.

Table 2

Bus-clock functions

The TEA5757; TEA5759 has a 25-bit shift register;
see Table 3 for an explanation of the shift register bits.

If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 0.

The bus protocol is depicted in Figs 3 and 4.

SIGNAL

DESCRIPTION

PIN

BUS-CLOCK

software driven clock input

DATA

data input/output

WRITE-ENABLE write/read input

BUS-CLOCK

MO/ST (PIN 24)

RESULT

LOW

stereo

LOW

HIGH

mono

HIGH

LOW

tuned

HIGH

not tuned

Table 3

Explanation of the shift register bits

Note

1. The output pins 30 and 31 can drive currents up to 5 mA; bits P0.19 and P1.18 control the output voltage of the

control pins P0 (pin 30) and P1 (pin 31):

a) Bit P0.19 LOW sets P0 (pin 30) to LOW.

b) Bit P0.19 HIGH sets P0 (pin 30) to HIGH.

c) Bit P1.18 LOW sets P1 (pin 31) to LOW.

d) Bit P1.18 HIGH sets P1 (pin 31) to HIGH.

BIT

DESCRIPTION

LOGIC

STATE

RESULT

S.24 (MSB)

search start/end

after a search when a station is found or after a preset

during the search action

D.23

search up/down

indicates if the radio has to search down

indicates if the radio has to search up

M.22

mono/stereo

stereo is allowed

mono is required (radio switched to forced mono)

B0.21

band

see Table 4 selects FM/MW/LW/SW band

B1.20

P0.19

port

note 1

user programmable bits which e.g. can be used as band
switch driver

P1.18

S0.17

search-level of station

see Table 5 determines the locking field strength during an

automatic search, automatic store or manual search

S1.16

dummy

buffer

F.14 to F.0 (LSB)

frequency

determine the tuning frequency of the radio; see Table 6
for the bit values

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

CHARACTERISTICS
V

CC1

= 3 V; T

amb

= 25

C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

CC1

supply voltage

2.5

CC2

supply voltage for tuning

DDD

supply voltage for digital part

2.5

tune

tuning voltage

0.7

CC2

0.75 V

CC2

supply current for tuning in
preset mode (band-end to
band-end)

800

BUS-CLOCK(max)

maximum BUS-CLOCK
frequency

300

kHz

CC1

current consumption during
acquisition of V

CC1

AM mode

FM mode

12.5

15.5

18.5

current consumption during
acquisition of I

AM mode

4.8

FM mode

5.5

CC1

current consumption after
acquisition of V

CC1

AM mode

FM mode

current consumption after
acquisition of I

AM mode

3.3

FM mode

2.7

synthesizer auto-search time for
empty band

FM mode

acq

synthesizer preset acquisition
time between two band limits

100

200

500

band

frequency band range of the
synthesizer

AM mode

0.144

MHz

FM mode

150

MHz

AFC inaccuracy of FM

kHz

AFC inaccuracy of AM

100

P0(sink)

sink current of software
programmable output P0

= 3 V

P1(sink)

sink current of software
programmable output P1

= 3 V

P0(source)

source current of software
programmable output P0

= 0 V

P1(source)

source current of software
programmable output P1

= 0 V

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

AM CHARACTERISTICS
Input frequency f

= 1 MHz; m = 0.3; f

= 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;

measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input

level; V

refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9); unless otherwise specified.

FM CHARACTERISTICS
Input frequency f

= 100 MHz;

f = 22.5 kHz; f

= 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;

refers to pin voltages; V

i(n)

refers to test circuit (see Fig.9); unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

AF output voltage

= 5 mV

RF sensitivity input voltage

(S+N)/N = 26 dB

large signal voltage handling capacity m = 0.8; THD

150

300

PSRR

power supply ripple rejection

= 100 mV (RMS);

100 Hz; V

= 3.0 V

input current (pin 2)

= 0.2 V

input capacitance (pin 2)

= 0.2 V

front-end conversion gain

= 0.2 V

= 0.9 V

(S+N)/N

signal plus noise-to-noise ratio

THD

total harmonic distortion

= 1 mV

0.8

2.0

450

IF suppression

= 30 mV

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

AF output voltage

= 1 mV

RF sensitivity input voltage

(S+N)/N = 26 dB

3.8

RF limiting sensitivity

3 dB;

is 0 dB at V

= 1 mV

0.4

1.2

3.8

large signal voltage handling capacity THD < 5%

500

PSRR

power supply ripple rejection

= 100 mV (RMS);

100 Hz; V

= 3.0 V

front-end conversion gain

(S+N)/N

signal plus noise-to-noise ratio

= 1 mV

THD

total harmonic distortion

IF filter
SFE10.7MS3A20K-A

0.3

0.8

----------

---------

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

STEREO DECODER CHARACTERISTICS
V

i3(L + R)

= 155 mV; V

pilot

= 15.5 mV; f = 1 kHz; apply unmodulated RF signal of 100 mV to front-end to set radio to

maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.

TUNING CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

14/15

AF output voltage

160

pilot(s)

switch to stereo

pilot(m)

switch to mono

AF-L

MPX voltage gain

1.5

+1.5

(S+N)/N

signal plus noise-to-noise ratio

pilot

= 15.5 mV (stereo)

THD

total harmonic distortion

0.5

1.0

channel separation

carrier and harmonic suppression

19 kHz (200 mV) = 0 dB

38 kHz

stereo-blend

= 200

= 20

mute(s)

soft mute depth

= 3

V; V

= V

= 1

V; V

= V

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

FM voltage levels

3 dB

-point at V

= 2

high (auto-store/search)

S0 = 1; S1 = 1

150

500

medium (auto-store/search)

S0 = 0; S1 = 1

low (auto-store/search)

S0 = 1; S1 = 0

nominal (preset mode/tuning indication)

S0 = 0; S1 = 0

AM voltage levels

3 dB

-point at V

= 2

high (auto-store/search)

S0 = 1; S1 = 1

400

1000

2500

medium (auto-store/search)

S0 = 0; S1 = 1

low (auto-store/search)

S0 = 1; S1 = 0

nominal (preset mode/tuning indication)

S0 = 0; S1 = 0

AFC(off)

AFC voltage off mode

3 dB

-point at V

= 2

FM mode

AM mode

mute(h)

hard mute depth

WRITE-ENABLE = HIGH

1999

Aug

Philips Semiconductors

Product specification

Self T

uned Radio (STR)

TEA5757; TEA5759

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TEST AND APPLICA

TION INFORMA

TION

handbook, full pagewidth

100

220
nF

4.7 nF

22 pF

100

VSTAB(A)

VSTAB(B)

GND

TUNE

18 k

47 k

75 kHz

(13)

(14)

VSTAB(A)

VSTAB(B)

VCC2

18 pF

470 pF

BB112

TUNE

470 nF

10 nF

4.7

TUNE

BB804

VSTAB(B)

68 k

2.2 k

10 k

50 k

470 nF

100 nF

12 nF

VCC1

MO/ST

left output

right output

100 nF

2.2

VCC1

DATA

BUS-CLOCK

WRITE-ENABLE

VSTAB(B)

470 nF

330 pF

220 nF

18 pF

BB112

22 nF

TEA5757;
TEA5759

MHA113

(4)

(3)

(5)

(7)

(11)

(10)

(8)

(6)

(2)

(9)

18 k

TUNE

(1)

(12)

Fig.8 Application diagram.

(1) L8 = MC117 E523FN-2000242, 38 pF

3%,

TOKO.

(2) L7 = MC117 E523FN-2000242, 38 pF

3%,

TOKO.

(3) K1 = SFE10.7MS3, MURATA.

(4) K2 = SFE10.7MS3, MURATA.

(5) K3 = CDA10.7-MG40-A, MURATA.

(6) L6 = 60 nH.

(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.

(8) L1 = 250

H ferroceptor.

(9) L2 = 7P 7DRS-11459N, 110

H at 796 kHz, Q = 80, TOKO.

(10) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.

(11) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.

(12) De-emphasis time constant is 50

s: C

de-emp

= 12 nF.

De-emphasis time constant is 75

s: C

de-emp

= 18 nF.

(13) Standard applications:

30 ppm at 25

Short wave applications:

20 ppm at 25

(14) Alternatively BB512, Siemens or KV1561A, TOKO.

1999

Aug

Philips Semiconductors

Product specification

Self T

uned Radio (STR)

TEA5757; TEA5759

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handbook, full pagewidth

100

220
nF

1 nF

100

VSTAB(A)

VSTAB(B)

GND

47 k

75 kHz

VSTAB(B)

VCC2

18 pF

470 pF

BB112

TUNE

470 nF

10 nF

BB804

VSTAB(B)

100 nF

VCC1

DATA

BUS-CLOCK

WRITE-ENABLE

VSTAB(B)

VSTAB(A)

470 nF

TEA5757;
TEA5759

MHA114

(4)

(3)

(5)

(11)

(7)

(10)

(8)

680 pF

6.8

(6)

(12)

1 MHz

Vi1

3
k

5 k

(9)

(13)

VSTAB(A) Vi2

Vi3

450 kHz

MPX

330 pF

220 nF

4.7

68 k

8.2 k

2.2 k

10 k

50 k

470 nF

100 nF

12
nF

VCC1

MO/ST

left
output

right
output

2.2

330

10.7

MHz

1 nF

Vi4

560

100 MHz

Vi5

18 k

TUNE

(2)

BB804

18 k

TUNE

(1)

Fig.9 Test circuit.

(1) L8 = MC117 E523FN-2000242, 38 pF

3%,

TOKO.

(2) L7 = MC117 E523FN-2000242, 38 pF

3%,

TOKO.

(3) K1 = SFE10.7MS3, MURATA.

(4) K2 = SFE10.7MS3, MURATA.

(5) K3 = CDA10.7-MG40-A, MURATA.

(6) L1 = 22281

30091.

(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.

(8) L2 = 7P 7DRS-11459N, 110

H at 796 kHz, Q = 80, TOKO.

(9) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.

(10) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.

(11) De-emphasis time constant is 50

s: C

de-emp

= 12 nF.

De-emphasis time constant is 75

s: C

de-emp

= 18 nF.

(12) Standard applications:

30 ppm at 25

Short wave applications:

20 ppm at 25

(13) Alternatively BB512, Siemens or KV1561A, TOKO.

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

SOLDERING

Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"Data Handbook IC26; Integrated Circuit Packages"

(document order number 9398 652 90011).

There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250

C. The top-surface temperature of the

packages should preferable be kept below 230

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

For packages with leads on two sides and a pitch (e):

larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

For packages with leads on four sides, the footprint must
be placed at a 45

angle to the transport direction of the

printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320

1999 Aug 26

Philips Semiconductors

Product specification

Self Tuned Radio (STR)

TEA5757; TEA5759

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45

angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

PACKAGE

SOLDERING METHOD

WAVE

REFLOW

(1)

BGA, SQFP

not suitable

suitable

HLQFP, HSQFP, HSOP, HTSSOP, SMS

not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ

suitable

LQFP, QFP, TQFP

not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO

not recommended

(5)

suitable

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999

Philips Semiconductors a worldwide company

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
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Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
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Tel. +359 2 68 9211, Fax. +359 2 68 9102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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Colombia: see South America

Czech Republic: see Austria

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
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Finland: Sinikalliontie 3, FIN-02630 ESPOO,
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Hungary: see Austria

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Tel. +353 1 7640 000, Fax. +353 1 7640 200

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TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800

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Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,
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Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

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Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

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Tel. +7 095 755 6918, Fax. +7 095 755 6919

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Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
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04547-130 SÃO PAULO, SP, Brazil,
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Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

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United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
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United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777

Printed in The Netherlands

545002/03/pp

Date of release:

1999 Aug 26

Document order number:

9397 750 06058

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