1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

FEATURES

Low-noise, wide dynamic range amplifier

Very low noise figure

Dual balanced mixer for over 25 dB on-chip image
rejection

IF I/Q combiner at 110 MHz

On-chip quadrature network

RX fast on/off power-down mode

Shrink small outline packaging

Very small application (no image filter).

APPLICATIONS

1800 MHz front-end for DECT hand-portable
equipment

Compact digital mobile communication equipment

TDMA receivers.

GENERAL DESCRIPTION

UAA2077AM contains a high frequency low noise receiver
front-end intended to be used in DECT mobile telephones.
Designed in an advanced BiCMOS process it combines
high performance with low power consumption and a high
degree of integration, thus reducing external component
costs and total front-end size.

The main advantage of the UAA2077AM is its ability to
provide over 25 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed.

Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in I
and Q IF channels that phase shift the IF by 45

and 135

respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.

For instance, signals presented at the RF input at LO + IF
frequency are rejected through this signal processing
while signals at LO

IF frequency can form the IF signal.

An internal switch enables the upper or lower image
frequency to be rejected.

The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45

and 135

phase shifting and a combining

network for image rejection. The IF driver has differential
open-collector type outputs.

The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers.The centre frequency of the phase shifter is
adjustable for maximum image rejection in a given band.
The all-pass filters outputs are buffered before being fed to
the receive mixers. All RF and IF inputs or outputs are
balanced.

Two pins RXON and SXON are used to control the
different power-down modes. A special mode of operation
called synthesizer-on mode (SX mode), controlled by pin
SXON can be used to minimize the LO pulling when the
receiver is turned on. When SXON is HIGH, all internal
buffers on the LO path are turned on. Pin SBS allows a
selection of whether to reject the upper or lower image
frequency. Special care has been taken for fast power-up
switching.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply voltage

amb

= 0 to +70

3.15

4.0

5.3

over full temperature range

3.6

4.0

5.3

CC(RX)

receive supply current

21.5

26.5

33.5

CC(PD)

supply current in power-down

0.2

amb

operating ambient temperature

+25

+85

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

UAA2077AM

SSOP20

plastic shrink small outline package; 20 leads; body width 4.4 mm

SOT266-1

1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

PINNING

SYMBOL

PIN

DESCRIPTION

n.c.

not connected

n.c.

not connected

CCLNA

supply voltage for LNA and IF parts

n.c.

not connected

RFINA

RF input A (balanced)

RFINB

RF input B (balanced)

n.c.

not connected

LNAGND

ground for LNA and IF parts

SXON

SX mode enable (see Table 1)

QUADLO

input voltage for LO quadrature
trimming

SBS

sideband selection

RXON

RX mode enable (see Table 1)

LOINB

LO input B (balanced)

LOINA

LO input A (balanced)

CCLO

supply voltage for LO parts

LOGND

ground for LO parts

IFA

IF output A (balanced)

IFB

IF output B (balanced)

n.c.

not connected

n.c.

not connected

Fig.2 Pin configuration.

handbook, halfpage

UAA2077AM

MBH151

n.c.

RFINA

RFINB

LNAGND

SXON

VQUADLO

SBS

RXON

LOINB

LOINA

LOGND

IFA

IFB

n.c.

VCCLNA

VCCLO

FUNCTIONAL DESCRIPTION

Receive section

The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type, the whole internal architecture is fully
differential.

The local oscillator, shifted in phase to 45

and 135

mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45

and 135

respectively, amplified and recombined

internally to realize the image rejection.

Pin SBS allows sideband selection:

> f

(SBS = 1)

< f

(SBS = 0).

where f

is the frequency of the wanted signal.

Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics.

The IF output is differential and of the open-collector type.
Typical application will load the output with a differential
1 k

load; for example, a 1 k

resistor load at each IF

output, plus a differential 2 k

load consisting of the input

impedance of the IF filter or the input impedance of the
matching network for the IF filter. The power gain refers to
the available power on this 2 k

load. The path to V

for

the DC current should be achieved via tuning inductors.
The output voltage is limited to V

+ 3V

or 3 diode

forward voltage drops.

Fast switching, on/off, of the receive section is controlled
by the hardware input RXON.

1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

Fig.3 Block diagram, receive section.

handbook, full pagewidth

MBH152

LNA

COMBINER

amplifier

MIXER

RXON

LOIN

IFA

IFB

SBS

RFINA

RFINB

LNAGND

VCCLNA

135

Local oscillator section

The local oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.

The centre frequency of the receive band is adjustable by
the voltage on pin V

QUADLO

. This should be achieved by

connecting a resistor between V

QUADLO

and V

. Over

25 dB of image rejection can be obtained by an optimum
resistor value.

A synthesizer-on (SX) mode is used to power-up the LO
input buffers, thus minimizing the pulling effect on the
external VCO when entering receive mode. This mode is
active when SXON = 1.

There are no internal biassing components attached to the
pins LOINA and LOINB. These pins are connected by
capacitors to the internal phase shifting network.

Fig.4 Block diagram, LO section.

handbook, halfpage

MBH153

LOINB

to RX

LOINA

QUAD

LOGND

VCCLO

VQUADLO

1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

Table 1 Control of power status

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

HANDLING

Every pin withstands the ESD test in accordance with

"MIL-STD-883C Class 2 (method 3015.5)".

DC CHARACTERISTICS
V

= 4.0 V; T

amb

= 25

C; unless otherwise specified.

EXTERNAL PIN LEVEL

CIRCUIT MODE OF OPERATION

RXON

SXON

LOW

power-down mode

HIGH

RX mode (receive and LO sections on)

LOW

HIGH

SX mode (only LO section on)

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

supply voltage

GND

difference in ground supply voltage applied between LOGND and LNAGND

0.6

l(max)

maximum power input

dBm

j(max)

maximum operating junction temperature

150

max

maximum power dissipation

250

stg

IC storage temperature

+150

SYMBOL

PARAMETER

VALUE

UNIT

th j-a

thermal resistance from junction to ambient in free air

120

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Pins V

CCLNA

and V

CCLO

supply voltage

amb

= 0 to +70

3.15

4.0

5.3

over full temperature range 3.6

4.0

5.3

CC(RX)

supply current in RX mode

21.5

26.5

33.5

CC(PD)

supply current in power-down mode

0.2

CC(SX)

supply current in SX mode

Pins RXON, SXON and SBS

CMOS threshold voltage

note 1

1.25

HIGH level input voltage

0.7V

LOW level input voltage

0.3

+0.8

HIGH level static input current

pin at V

0.4 V

LOW level static input current

pin at 0.4 V

1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

Note

1. The referenced inputs should be connected to a valid CMOS input level.

AC CHARACTERISTICS

= 4.0 V; T

amb

30 to +85

C; unless otherwise specified.

Pins RFINA and RFINB

DC input voltage level

receive section on

2.0

Pins IFA and IFB

DC output current

receive section on

2.5

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Receive section (receive section enabled)

iRX

RF input resistance
(real part of the parallel input
impedance)

balanced; at 1890 MHz

iRX

RF input capacitance
(imaginary part of the parallel
input impedance)

balanced; at 1890 MHz

iRX

RF input frequency

1880

1900

MHz

iRX

return loss on matched RF
input

balanced; note 1

conversion power gain

differential RF inputs to
differential IF outputs loaded to
1 k

differential

rip

gain ripple as a function of RF
frequency

note 2

0.2

G/T

gain variation with temperature T

amb

30 to +25

C; note 2

+10

mdB

/°

amb

= +25 to +85

C; note 2

mdB

/°

CP1

1 dB compression point

differential RF inputs to
differential IF outputs; note 1

dBm

DES3

3 dB desensitisation point

interferer frequency offset:
3 MHz; differential RF inputs to
differential IF outputs; note 1

dBm

interferer frequency offset:
20 MHz; differential RF inputs to
differential IF outputs; note 1

dBm

IP2D

order intercept point

differential RF inputs to
differential IF outputs; note 2

dBm

IP3

order intercept point

differential RF inputs to
differential IF outputs; note 2

dBm

overall noise figure

differential RF inputs to
differential IF outputs;
notes 2 and 3

4.3

5.0

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

Notes

1. Measured and guaranteed only on UAA2077AM demonstration board at T

amb

= 25

2. Measured and guaranteed only on UAA2077AM demonstration board.

3. This value includes printed-circuit board and balun losses.

4. Measured and guaranteed only on UAA2077AM demonstration board at T

amb

= 25

C. V

QUADLO

open-circuit.

LRX

typical application IF output
load impedance

balanced

oRX

return loss on matched IF
output

balanced; note 1

oRX

IF frequency

110

MHz

rejection of image frequency

< f

; f

= 110 MHz; note 4

Local oscillator section (receive section enabled)

iLO

LO input frequency

1770

2010

MHz

iLO

LO input resistance
(real part of the parallel input
impedance)

balanced; at 1780 MHz

iLO

LO input capacitance
(imaginary part of the parallel
input impedance)

balanced; at 1780 MHz

iLO

return loss on matched LO
input (including power-down
mode)

note 1

iLO

return loss variation ratio
between SX and RX modes

linear S

variation; note 1

iLO

LO input power level

dBm

reverse isolation

LOIN to RFIN at LO frequency;
note 2

Timing

start

start-up time of each block

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

SOLDERING

Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

"IC Package Databook" (order code 9398 652 90011).

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45

Wave soldering

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.

The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260

C, and

maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150

C within

6 seconds. Typical dwell time is 4 seconds at 250

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300

C. When

using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320

1996 Jul 04

Philips Semiconductors

Product specification

Image rejecting front-end
for DECT applications

UAA2077AM

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com/ps/

(1)

UAA2077AM_4 June 26, 1996 11:51 am

Philips Semiconductors a worldwide company

SCA50

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Printed in The Netherlands

647021/1200/04/pp16

Date of release: 1996 Jul 04

Document order number:

9397 750 00919

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