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Электронный компонент: UAA2077TS

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DATA SHEET
Preliminary specification
Supersedes data of 2000 Mar 09
File under Integrated Circuits, IC17
2000 Apr 17
INTEGRATED CIRCUITS
UAA2077TS
2 GHz image rejecting front-end
2000 Apr 17
2
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
FEATURES
Low noise, wide dynamic range amplifier
Very low noise figure
Dual balanced mixers for over 30 dB on-chip image
rejection
Quadrature 200 MHz IF recombiner
On-chip quadrature network
Independent SX, RX, power-down control modes and
fast power-up switching
Very small outline packaging
No image filter required, resulting in a very small
application.
APPLICATIONS
GSM dual band solution with UAA3522HL
High frequency front-end for DCS1800/PCS1900
portable hand-held equipment
Compact mobile digital communication equipment
Time Division Multiple Access (TDMA) receivers e.g.
RF Local Area Networks (RF LANs).
GENERAL DESCRIPTION
The UAA2077TS contains a 2 GHz front-end receiver
intended to be used in mobile telephones. Designed in an
advanced BiCMOS process it combines high performance
with a low power consumption and high integration, thus
reducing external component costs and overall front-end
size.
The main advantage of the UAA2077TS is its ability to
provide an image rejection over 30 dB. Therefore, an
additional image filter between the Low Noise Amplifier
(LNA) and the mixer is not required.
Image rejection is achieved internally by two RF mixers in
quadrature operation and two all-pass filters in the I and Q
IF channels that shift the phase of signals by 45
and 135
respectively. These two phase shifted IF signals are
combined and buffered to the front-end IF output signal.
An input signal with a frequency above the Local Oscillator
(LO) frequency results in an IF signal, while an input signal
with a frequency below the LO frequency is rejected.
The receive section consists of an LNA that drives a
quadrature mixer pair. The IF amplifier consists of an
on-chip 45
and 135
phase shifting network and an image
reject IF recombiner. The IF driver has differential
open-collector outputs.
The LO part consists of an internal all-pass phase shifting
filter to provide the quadrature LO signals for the mixers of
the receive section. The all-pass filter output signals are
buffered before being fed to the mixers. All RF inputs and
IF outputs are balanced.
Pins RXON and SXON allow control of the different active
modes and power-down. The SX mode and the RX mode
are independent active states of the LO section and the
receive section respectively. When the logic level on
pin SXON is HIGH, all internal buffers in the LO path of the
circuit are turned on, thus minimizing LO pulling during the
independent powering up of the receive section. Special
care has been taken by design for fast switching from
power-down to any of the different active modes.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
2.7
2.8
3.3
V
I
CC(pd)
power-down supply current
-
-
50
A
I
CC(SRX)
supply current in SRX mode
-
25
28
mA
T
amb
ambient temperature
-
30
+25
+70
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
UAA2077TS/D
SSOP16
plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
2000 Apr 17
3
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
BLOCK DIAGRAM
handbook, full pagewidth
FCA012
14
11
LOGND
135
135
16
QUADRATURE
PHASE
SHIFTER
IF
COMBINER
13
VCCLO
LOCAL OSCILLATOR SECTION
RECEIVE SECTION
1
6
LNAGND
2, 5, 8
n.c.
9
GND
10
RXON
7
SXON
4
RFINB
3
RFINA
LNA
12
LOINB LOINA
45
45
15
VCCLNA
IFA
IFB
UAA2077TS
Fig.1 Block diagram.
PINNING
SYMBOL
PIN
DESCRIPTION
V
CCLNA
1
supply voltage for receive section
(LNA and IF parts)
n.c.
2
not connected
RFINA
3
RF input A (balanced)
RFINB
4
RF input B (balanced)
n.c.
5
not connected
LNAGND
6
ground for receive section (LNA and
IF parts)
SXON
7
SX mode enable input (see Table 1)
n.c.
8
not connected
GND
9
ground
RXON
10
RX mode enable input (see Table 1)
LOINB
11
LO input B (balanced)
LOINA
12
LO input A (balanced)
V
CCLO
13
supply voltage for LO section
LOGND
14
ground for LO section
IFA
15
IF output A (balanced)
IFB
16
IF output B (balanced)
handbook, halfpage
UAA2077TS
FCA011
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCCLNA
n.c.
RFINA
RFINB
n.c.
LNAGND
SXON
n.c.
GND
RXON
LOINB
LOINA
VCCLO
LOGND
IFA
IFB
Fig.2 Pin configuration.
2000 Apr 17
4
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
FUNCTIONAL DESCRIPTION
Receive section
The circuit contains a low-noise amplifier followed by two
high dynamic range mixers (see Fig.3). The mixers are of
the Gilbert cell type, the architecture of which is fully
differential.
The LO signal is phase shifted into 45
and 135
signals,
mixed with the RF input signal to provide the
I and Q channel signals. The I and Q channel signals are
buffered, phase shifted by 45
and 135
respectively,
amplified and internally combined, thus obtaining image
rejection.
Balanced signal interfaces are used for minimizing
crosstalk from package parasitics.
The IF output is of a differential open collector type.
A typical application consists of pull-up resistors of 680
at each IF output and a differential load resistance of 1 k
for the IF filter, due to its impedance or its matching
network.
The power gain refers to the resulting power into the 1 k
load. The path for the DC current from V
CC
into the open
collector outputs should be realized by the inductors.
The output signal is limited to V
CC
+ 3V
BE
.
Fast switching between power-down and the RX mode is
controlled by the mode control pin RXON.
handbook, full pagewidth
FCA013
135
16
IF
COMBINER
1
6
LNAGND
2, 5, 8
n.c.
10
RXON
4
RFINB
3
RFINA
LNA
45
15
VCCLNA
IFA
IFB
UAA2077TS
to LO section
9
GND
Fig.3 Receive section.
2000 Apr 17
5
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
Local oscillator section
The LO input directly drives the two internal all-pass
networks to provide the quadrature signals for the mixers
(see Fig.4).
The SX mode (see Table 1) is used to activate the
LO section, thus minimizing pulling of the external Voltage
Controlled Oscillator (VCO) when enabling the receive
section. The SX mode is active when the logic level on pin
SXON is HIGH.
Table 1
Operating modes
LOGIC LEVEL
MODE
PIN RXON PIN SXON
LOW
LOW
Power-down mode
HIGH
LOW
RX mode; receive section
active
LOW
HIGH
SX mode; LO section active
HIGH
HIGH
SRX mode; both sections
active
handbook, halfpage
FCA014
14
11
LOGND
135
QUADRATURE
PHASE
SHIFTER
13
VCCLO
7
SXON
12
LOINB
to receive section
LOINA
45
UAA2077TS
9
GND
Fig.4 LO section.
2000 Apr 17
6
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
HANDLING
All pins withstand 1500 V ESD test in accordance with
"MIL-STD-883C class 1 (method 3015.5)".
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
CC
= 2.8 V; T
amb
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
6
V
V
SS
difference in voltage between ground pins
-
0.6
V
P
i(max)
maximum input power
-
20
dBm
T
j(max)
maximum junction temperature
-
+150
C
P
tot
total power dissipation
in free air
-
250
mW
T
stg
storage temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
CC
supply voltage
full temperature range
2.7
2.8
3.3
V
I
CC(pd)
power-down supply current
-
-
50
A
I
CC(RX)
supply current in RX mode
-
22
24
mA
I
CC(SX)
supply current in SX mode
-
3
4
mA
I
CC(SRX)
supply current in SRX mode
-
25
28
mA
Mode control: pins RXON and SXON
V
IH
HIGH-level input voltage
1.9
-
V
CC
V
V
IL
LOW-level input voltage
-
0.3
-
+0.6
V
I
IH
HIGH-level input current
-
1
-
+1
A
I
IL
LOW-level input current
-
1
-
+1
A
2000 Apr 17
7
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
AC CHARACTERISTICS
V
CC
= 2.8 V; T
amb
= 25
C; f
o(RX)
= 200 MHz; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
Receive section (receive section enabled): DCS mode
R
i(RX)
RF input resistance (real part of
the parallel input impedance)
balanced; at 1845 MHz
-
50
-
C
i(RX)
RF input capacitance (imaginary
part of the parallel input
impedance)
balanced; at 1845 MHz
-
0.5
-
pF
f
i(RX)
RF input frequency
1805
-
1880
MHz
RL
i(RX)
return loss on matched RF input
balanced; note 1
10
15
-
dB
G
CP(RX)
conversion power gain
RF inputs to IF outputs; note 1
20
23
26
dB
G
rip
gain ripple as a function of RF
frequency
over DCS frequency range;
note 1
-
-
1
-
1.5
dB/100 MHz
G/T
gain variation with temperature
-
60
-
30
-
mdB/K
CP1
RX
1 dB compression point
referenced to RF input; note 1
-
23.5
-
20
-
dBm
DES3
input referred
3 dB desensitisation
interferer frequency offset is
3 MHz; useful signal is
-
101 dBm; note 1
-
25
-
-
dBm
IP3
RX
3rd order intercept point
referenced to RF input; note 1
-
15
-
12
-
dBm
NF
RX
overall noise figure
RF inputs to IF outputs; note 1
normal case
-
3.5
4.2
dB
worse case for LO input, power
and V
CC
-
-
4.4
dB
Z
L(RX)
typical application IF output load
impedance
balanced; note 1
-
1000
-
RL
o(RX)
return loss on matched IF output note 1
10
15
-
dB
f
o(RX)
IF frequency range
f
RF
> f
LO
-
200
-
MHz
IR
rejection of image frequency
f
RF
> f
LO
; f
RF
is the frequency of
the wanted signal; note 1
30
38
-
dB
Receive section (receive section enabled): PCS mode
R
i(RX)
RF input resistance (real part of
the parallel input impedance)
balanced; at 1960 MHz
-
tbf
-
C
i(RX)
RF input capacitance (imaginary
part of the parallel input
impedance)
balanced; at 1960 MHz
-
tbf
-
pF
f
i(RX)
RF input frequency
1930
-
1990
MHz
RL
i(RX)
return loss on matched RF input
balanced; note 1
10
15
-
dB
G
CP(RX)
conversion power gain
RF inputs to IF outputs; note 1
-
22
-
dB
G
rip
gain ripple as a function of
RF frequency
over PCS frequency range;
note 1
-
-
1
-
dB/100 MHz
G/T
gain variation with temperature
-
-
30
-
mdB/K
CP1
RX
1 dB compression point
referenced to RF input; note 1
-
-
20
-
dBm
2000 Apr 17
8
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
Notes
1. Measured and guaranteed only on demonstration board including PCB and balun.
DES3
input referred
3 dB desensitisation
interferer frequency offset is
3 MHz; useful signal is
-
101 dBm; note 1
-
tbf
-
dBm
IP3
RX
3rd order intercept point
referenced to RF input; note 1
-
-
12
-
dBm
NF
RX
overall noise figure
R inputs to IF outputs; note 1
-
3.7
-
dB
Z
L(RX)
typical application IF output load
impedance
balanced; note 1
-
1000
-
RL
o(RX)
return loss on matched IF output note 1
10
15
-
dB
f
o(RX)
IF frequency range
f
RF
> f
LO
-
200
-
MHz
IR
rejection of image frequency
f
RF
> f
LO
; f
RF
is the frequency of
the wanted signal; note 1
-
38
-
dB
Local oscillator section (receive section enabled)
f
i(LO)
LO input frequency
1605
-
1790
MHz
R
i(LO)
LO input resistance (real part of
the parallel input impedance)
balanced; at 1645 MHz
-
50
-
C
i(LO)
LO input capacitance (imaginary
part of the parallel input
impedance)
balanced; at 1645 MHz
-
1.2
-
pF
RL
i(LO)
return loss on matched input
(including standby mode)
note 1
10
15
-
dB
P
i(LO)
LO power level
note 1
-
10
-
3
0
dBm
RI
(LO)
reverse isolation
pins LOIN to RFIN at
LO frequency; note 1
40
-
-
dB
Timing
t
stu
start-up time of each block
1
5
20
s
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
2000 Apr 17
9
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
PACKAGE OUTLINE
UNIT
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0.00
1.4
1.2
0.32
0.20
0.25
0.13
5.30
5.10
4.5
4.3
0.65
6.6
6.2
0.65
0.45
0.48
0.18
10
0
o
o
0.13
0.2
0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
0.75
0.45
1.0
SOT369-1
MO-152
95-02-04
99-12-27
w
M
A
A
1
A
2
b
p
D
y
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
X
(A )
3
A
0.25
1
8
16
9
pin 1 index
0
2.5
5 mm
scale
SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
A
max.
1.5
2000 Apr 17
10
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 230
C.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
2000 Apr 17
11
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not suitable
(2)
suitable
PLCC
(3)
, SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended
(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended
(5)
suitable
2000 Apr 17
12
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2000 Apr 17
13
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
NOTES
2000 Apr 17
14
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
NOTES
2000 Apr 17
15
Philips Semiconductors
Preliminary specification
2 GHz image rejecting front-end
UAA2077TS
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
Philips Semiconductors a worldwide company
For all other countries apply to: Philips Semiconductors,
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China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands
403506/02/pp
16
Date of release:
2000 Apr 17
Document order number:
9397 750 07033