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Электронный компонент: UBA1710M

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DATA SHEET
Product specification
Supersedes data of 1997 Feb 18
File under Integrated Circuits, IC17
1997 Oct 17
INTEGRATED CIRCUITS
UBA1710M
Modulator for GaAs power
amplifiers
1997 Oct 17
2
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
FEATURES
Power MOS modulators for control of GaAs power
amplifier drain voltage
Power control loop amplifier and MOS driver
Voltage tripler for supply of MOS driver
Positive-to-negative DC converter for GaAs power
amplifier gate biasing.
APPLICATIONS
Control of GaAs power amplifiers for GSM and DCS
hand-held transceivers.
GENERAL DESCRIPTION
The UBA1710M integrates the functions required to
operate the GaAs Power Amplifiers (PAs) from the
CGY20xx family which are intended for GSM and DCS
applications.
It includes a negative supply for PA gate biasing and most
of the functions required to implement power control so
that only a very few external component are required.
The power control section integrates two power MOS
devices for control of the PA drain voltages, an MOS driver
and a feedback loop amplifier. The MOS driver is supplied
from an on-chip voltage tripler.
QUICK REFERENCE DATA
Note
1. For conditions, see Chapter "Characteristics".
ORDERING INFORMATION
SYMBOL
PARAMETER
(1)
MIN.
TYP.
MAX.
UNIT
V
CC
analog supply voltage
4.2
4.8
7.5
V
V
DD
digital supply voltage
4.2
4.8
7.5
V
I
CC
+ I
DD
peak supply current in power-up mode
-
12
-
mA
T
amb
operating ambient temperature
-
20
-
+85
C
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
UBA1710M
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1997 Oct 17
3
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGG536
VOLTAGE TRIPLER
CLOCK
NEGATIVE DC-DC
CONVERTER
POWER
MANAGEMENT
POWER MOS 1
POWER MOS 2
6
8
9
10
11
20
2
1
3
16
15
14
13
18
17
4
7
5
12
19
TC1N TC1P TC2N
NC3N
VN
TC2P
NC3P
VP
STB
Rext
D1B
D1A
S1B
S1A
D2
S2
VCC
VDD
GND
BUFI
UBA1710M
BUFFER
PINNING
SYMBOL
PIN
DESCRIPTION
NC3
P
1
charge pump tank capacitor
NC3
N
2
charge pump tank capacitor
V
N
3
negative bias voltage
V
CC
4
analog supply voltage
GND
5
ground
TC1
N
6
charge pump tank capacitor
V
DD
7
digital supply voltage
TC1
P
8
charge pump tank capacitor
TC2
N
9
charge pump tank capacitor
TC2
P
10
charge pump tank capacitor
V
P
11
positive tripler voltage
BUFI
12
buffer input
S1A
13
power MOS 1 source A
S1B
14
power MOS 1 source B
D1A
15
power MOS 1 drain A
D1B
16
power MOS 1 drain B
S2
17
power MOS 2 source
D2
18
power MOS 2 drain
R
ext
19
external resistance for V
N
STB
20
standby input (active HIGH)
Fig.2 Pin configuration.
handbook, halfpage
NC3P
NC3N
VN
VCC
GND
TC1N
VDD
TC1P
TC2N
TC2P
STB
Rext
D2
S2
D1A
S1B
D1B
S1A
BUFI
VP
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
UBA1710M
MGG535
1997 Oct 17
4
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
FUNCTIONAL DESCRIPTION
Power control section
Power control for GaAs PAs from the CGY20xx family is
achieved by varying the drain voltage. This is achieved
with the UBA1710M by means of the two power MOS
devices integrated on-chip. They enable separate control
of the PA output stage from the pre-amplifier stages.
They have a very low `on' resistance for low drop voltage
at high RF output power.
The MOS devices are driven by a buffer. The buffer
amplifier, in association with power MOS, is included in a
feedback loop to exhibit a high cut-off frequency (3 MHz)
over the whole control dynamic range. This buffer allows
fast switching of the MOS in accordance with GSM power
ramping requirements.
DC-DC converters
One DC-DC converter is required to provide negative gate
biasing to the GaAs PA.
The standard value is typically
-
2 V, without any external
resistor connected. The other one is a voltage tripler and
is required to supply the MOS driver. The driver is required
to raise the MOS gate voltage well above the battery
voltage in order to open the MOS switches
(`high side' driver).
These DC-DC converters are operated at a typical
frequency of 600 kHz supplied by an internal oscillator.
Five external capacitors with a typical value of 0.1
F
(0603 SMD) are required to operate these converters.
Power management
The power management disables the PA drain voltage and
prevents the PA from burnout if drain voltage is supplied
before the negative gate voltage is available.
Standby mode
An additional feature includes a standby mode, reducing
the current consumption to a maximum value of 1
A.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
analog supply voltage
-
0.5
+9.0
V
V
DD
digital supply voltage
-
0.5
+9.0
V
V
I
DC input voltage
all pins (except BUFI)
-
0.5
+9.0
V
pin BUFI
-
0.5
+5.0
V
I
I
DC current into any signal pin
-
10
+10
mA
P
tot
total power dissipation
-
0.65
W
T
stg
storage temperature
-
65
+150
C
T
amb
operating ambient temperature
-
20
+85
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
100
K/W
1997 Oct 17
5
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
CHARACTERISTICS
V
CC
= V
DD
= 4.8 V; T
amb
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
I
CC
+ I
DD
peak supply current
power-up mode; PA on
-
12
-
mA
power-down mode; PA off
-
5
-
mA
I
stb
standby current
standby mode
-
0.1
1
A
Power MOS 1
R
DSon1
on resistance
I
DS
= 1.3 A
-
0.18
-
Power MOS 2
R
DSon2
on resistance
I
DS
= 0.4 A
-
0.5
-
Clock circuit
f
clk
clock frequency
-
600
-
kHz
Voltage tripler
V
Po
output voltage
with I
Po
= 2 mA
11.3
11.8
12.3
V
V
R(p-p)
amplitude ripple
(peak-to-peak value)
with I
Po
= 2 mA;
C1 = C2 = 100 nF; C
P
= 100 nF
-
20
-
mV
t
on
turn-on time
-
100
-
s
Negative DC/DC converter
V
No
output voltage
with I
No
= 250
A; R
ext
= 470 k
-
1.5
-
1.8
-
2.0
V
V
R(p-p)
amplitude ripple
(peak-to-peak value)
with I
No
= 250
A; C3 = 100 nF;
C
N
= 100 nF
-
2
-
mV
t
on
turn-on time
-
280
-
s
MOS buffer amplifier
V
IL
LOW level input voltage
-
1.2
-
V
V
IH
HIGH level input voltage
-
3.4
-
V
t
sw
switching time from 0 to 4.5 V
2
load at MOS outputs
-
1
-
s
1997 Oct 17
6
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
APPLICATION INFORMATION
Fig.3 Application diagram.
handbook, full pagewidth
MGG537
BUFFER
VOLTAGE TRIPLER
CLOCK
C1
C2
C3
NEGATIVE DC-DC
CONVERTER
POWER
MANAGEMENT
POWER MOS 1
POWER MOS 2
PA input
PA output
PA
6
8
9
10
11
20
2
1
3
16
15
14
13
18
17
4
7
5
12
19
TC1N TC1P TC2N
NC3N
VN
VP
Vbat
CN
TC2P
NC3P
CP
STB
Rext
D1B
D1A
S1B
S1A
D2
S2
VCC
VDD
GND
BUFI
UBA1710M
1997 Oct 17
7
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
PACKAGE OUTLINE
UNIT
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
1.0
0.2
6.6
6.2
0.65
0.45
0.48
0.18
10
0
o
o
0.13
0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
0.75
0.45
SOT266-1
90-04-05
95-02-25
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
X
(A )
3
A
y
0.25
1
10
20
11
pin 1 index
0
2.5
5 mm
scale
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
A
max.
1.5
1997 Oct 17
8
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1997 Oct 17
9
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Oct 17
10
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
NOTES
1997 Oct 17
11
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
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Date of release: 1997 Oct 17
Document order number:
9397 750 02955