8
Electro-Optical Characteristics
Cooled - Large Area APDs
Active
Area
Dia.
(mm)
3
5
10
16
Part
Number
118-70-73-591
118-70-74-591
118-70-72-591
197-70-73-591
197-70-74-591
197-70-72-591
394-70-73-591
394-70-74-591
394-70-72-591
630-70-73-571
630-70-74-571
630-70-72-571
Spectral
Enhancement
UV
Blue
Red/IR
UV
Blue
Red/IR
UV
Blue
Red/IR
UV
Blue
Red/IR
Responsivity
Typical
(A/W)
55 @ 350nm
95 @ 500nm
135 @ 750nm
55 @ 350nm
95 @ 500nm
135 @ 750nm
55 @ 350nm
95 @ 500nm
135 @ 750nm
55@ 350nm
95 @ 500nm
135 @ 750nm
Temperature
Coefficient of
Breakdown
Voltage
(%/C)
+0.1
Bias
Voltage
Range
(V)
1700
to
2000
All specifications apply when APD is operated at 0C and at a gain of 300.
Active
Diameter
(mm)
3
5
10
16
Capacitance
f = 100kHz
Typ
(pF)
15
25
65
140
Dark Current
Typ
Max
(nA)
(nA)
4
12
6
18
15
35
45
100
Noise Current
Spectral Density
f = 100kHz
Typ
Max
(pA/ Hz) (pA/ Hz)
0.6
1.0
0.8
1.5
1.5
2.5
3.0
4.5
Rise Time
= 675nm
Load = 50
Typ
Max
(ns)
(ns)
8
12
10
15
12
18
15
22
TEC
Quiescent
Current
*
Th = 35C
(A)
0.85
0.95
0.68
0.86
3 mm
5 mm
10 mm
16 mm
Positive high voltage (HV) is applied to the cathode contact. The maximum value for the operating HV is specified with each device.
* This is the temperature at the backside of the Cooled APD package.
Operating beyond these limits may cause permanent damage to the device.
571 has a thermistor with a resistance of 7650 ohms 12% at 0C and a negative temperature coefficient.
591 has a LM335 temperature sensing IC. Devices must be operated with a sufficient heat sink.
Consult the factory for UV enhanced operation at wavelengths shorter than 350nm.
Absolute Maximum Ratings
Gain, M @ =675nm
350
Operating Temp Range (C)
+1 to +40
Storage Temp Range (C)
-55 to +70
TEC Voltage (V)
@23C (W)
TEC Current (A)
2.0
APD Die Power
Dissipation (W)
3 & 5 mm - 1.5
10 & 16 mm - 4.3
w w w. a d va n c e d p h o t o n i x . c o m
3 & 5 mm - 0.2
10 & 16 mm - 0.5
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