204-74-74-561
Quadrant LAAPD Array
The 204-74-74-561 is a highly sensitive 4-element array photodetector, built on the
basis of the API proprietary Large Area Avalanche Photodiode technology. Advanced
micromachining techniques have been implemented for the element pixelization, thus
producing highly stable and uniform devices. The array is housed in a rugged,
hermetically sealed metal package designed to perform in industrial applications as well
as laboratory and clinical environments.
The device offers a unique combination of a large area, high gain photodetector
and extremely low noise pixel performance. This combination makes it a perfect choice
for all applications requiring highly sensitive low-level signal detection with emphasis
on spatially sensitive instrumentation.
The device is ideally suited for high precision applications, including analytical
chemistry, fluorescence spectrophotometry and lifetime measurements, medical
diagnostic, scintillation detection, radiation monitoring, color image scanning, low-level
light pulse counting, laser ranging, position sensing, and many others. The integrated
structure of the array offers performance unmatched by any existing discrete detectors
and in certain applications can successfully compete with position sensitive
photomultipliers.
In addition to standard characteristic, the devices can be custom tailored to match
desired spectral or mechanical requirements.
Electro-Optical Characteristics
@ +23C and gain 200, unless otherwise noted
Total Active Area
21.2 mm
2
Single Pixel Active Area
2.3
x
2.3 mm (5.3 mm
2
)
Pitch 2.35
mm
Linear Fill Factor
90% typ.
Gain Variation Pixel-to-Pixel
+/-2.5% typ.
DC Interpixel Crosstalk
1% typ.
Bias Voltage Range
1
-1700 to 2000V
Temperature Coefficient of Bias @ M=const
+0.1%/C typ.
Operating Gain
20 to 200
Responsivity @ 500nm
70A/W typ
Pixel capacitance @ 100kHz
6pF typ
Pixel dark Current
4nA typ
Pixel Dark Noise Spectral Density @ f=10kHz
0.7pA/Hz typ
Pixel Rise Time @
= 675nm, R
l
= 50
6ns
typ
1
The maximum operating high voltage is specified with each device.
Absolute Maximum Ratings*
Gain 250
Power Dissipation per Element
0.1W
Operating Temperature
-55C to +40C
Storage Temperature
-55C to +70C
Lead Temperature
+300C (soldering, 5 sec)
*Operating beyond these limits may cause permanent damage to the device.
Features
Total active
area 21 mm
2
Four 5.3mm
2
pixels
Operating gain of 200
Responsivity up to 90 A/W
Low dark current and noise
Excellent time response
Rugged, compact package
Wide operating temp range
Applications
Laser Ranging & Guidance
Position Sensing
Analytical Instrumentation
Rev. 16 Feb, 2001
Preliminary
Spectral Responsivity @ M=200
0
20
40
60
80
100
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
R
e
s
pons
iv
it
y
(
A
/W)
MECHANICAL DIMENSIONS, SCHEMATIC AND PIN-OUT
Pixel Gain and Dark Current vs. Bias
1
10
100
1000
1500
1600
1700
1800
1900
2000
Bias Voltage (V)
Gai
n
0.1
1.0
10.0
100.0
Dar
k
Cur
r
ent
(
n
A)
Pixel Gain
Pixel Dark Current
Total Bias Current
Gain Surface Scan
0
50
100
150
200
250
-3.50
-2.50
-1.50
-0.50
0.50
1.50
2.50
3.50
Position (mm)
Ga
i
n
Pixel 1
Pixel 2
Typical Performance Graphs
1240 Avenida Acaso, Camarillo, CA 93012
(805) 987-0146 Fax (805) 484-9935
www.advancedphotonix.com
API reserves the right to change specifications without notification.
Effective Quantum Efficiency @ M=200
0
20
40
60
80
100
300
400
500
600
700
800
900
1000
1100
Wavelength (nm)
E
f
f
ect
i
ve Q
E
(
%
)
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