PHOTODIODE ARRAYS
SPECIFICATIONS
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``
Part Number
Number
of
Elements
Element
Dimensions
Pitch
Responsivity
Shunt
Resistance
1
Dark
Current
1
at 10V
Capacitance
at 0V
Uniformity
2
NEP
3
Min.
Min.
Max.
Max.
Typ.
Typ.
(mm)
(mm)
(A/W)
(M
)
(nA) (pF) (%)
(W/
Hz)
SD 219-51-03-301
12
0.965
x
2.01
1.01
0.35 @
633m
600
2.7
10
5
1.4x10
-14
SD 484-52-05-301
32
0.508
x
5.89
0.635
0.10 @
365nm
0.22 @
500nm
0.33 @
700nm
50
0.5
500
5
5.2x10
-14
* All specifications are per element. All values at 23C
1. Dark Current and Shunt Resistance vary with temperature as follows; for T23
C, I
DT
= I
D23
* 1.09
T
,
R
SHT
= R
SH23
* 0.9
T
, where
T=(T-23) and I
D23
and R
SH23
are values at 23
C.
2. Element to element responsivity uniformity is measured at the longest wavelength specified for responsivity of each part.
3. Test conditions are V
B
= 10mV, and highest responsivity value listed in the table.
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