SOLDERABLE CHIPS
SPECIFICATIONS
Responsivity:
0.34 A/W min., 0.40 A/W typ. @ 632.8nm; 0.55 A/W min., 0.66 A/W typ. @ 900nm
Part Number
Total
Active
Area
Chip
Dimensions
I
SC1
Shunt
Resistance
2
Dark Current
2
at 1V
Capacitance
3
Typ.
NEP
4
Max
Linear
Current
5
Min.
Min.
Typ.
Max.
at 0V
at 1V
Typ.
Typ.
(mm
2
) (in) (mA) (M
)
(nA) (nA) (pF) (pF) (W/
Hz)
(mA)
SD 150-61-2537
9
0.197
x
0.087
0.3 10 2.5
10
200
122
4.7x10
-14
0.9
SD 61-2637
9
0.197
x
0.087
0.3
5
10
40
200
122
9.2x10
-13
0.9
SD 150-61-2536
21
0.197
x
0.189
0.7 3 6.3
25
460
285
7.0x10
-13
2.1
SD 61-2636
21
0.197
x
0.189
0.7
1.5
25
100
460
285
1.5x10
-13
2.1
SD 150-61-2534
43
0.197
x
0.390
1.4 2 13
50
940
580
1.0x10
-13
4.3
SD 61-2634
43
0.197
x
0.390
1.4
1.0
50
200
940
580
2.1x10
-13
4.3
SD 150-61-2535
87
0.197
x
0.787
2.9 1.0 25
100
1900
1175
1.3x10
-13
8.7
SD 61-2635
87
0.197
x
0.787
2.9
0.5
100
400
1900
1175
3.0x10
-13
8.7
SD 150-61-2539
93
0.393
x
0.393
3.1 1.0 30
120
2040
1255
1.5x10
-13
9.3
SD 61-2639
93
0.393
x
0.393
3.1
0.5
120
480
2040
1255
3.1x10
-13
9.3
* All values at 23C
1. Short Circuit Current (I
SC
) is measured at 10mW/cm
2
from a tungsten light source at 2800K.
2. Dark Current and Shunt Resistance vary with temperature as follows; for T23
C, I
DT
= I
D23
* 1.09
T
,
R
SHT
= R
SH23
* 0.9
T
, where
T=(T-23) and I
D23
and R
SH23
are values at 23
C.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are V
B
= -1V, and 950 nm.
5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
Storage and Operating Temperature Range for all die is -55
C to 125C.
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