PJ9926A
Dual N-Channel MOSFET-ESD Protected
1-4 2003/04.rev.A
Preliminary
dvanced trench process technology Specially
designed for Li-ion battery packs and battery
switch applications TSSOP-8 and SOP-8 package
VDS=20V
RDS(ON),Vgs@4.5V=22m
RDS(ON),Vgs@3.5V=23m
RDS(ON),Vgs@2.5V=29m
ID=6.5A
ESD PROTECTION
Battery protection
Load switch
Power management
Device Operating
Temperature Package
PJ9926ACA
TSSOP-8
PJ9926ACS
-20 ~ 85
SOP-8
FEATURES
A
APPLICATIONS
BLOCK DIAGRAM
ORDERING INFORMATION
SOP-8
TSSOP-8
Pin
1. Drain 5.Gate 2
2. Source1 6.Source2
3. Source1 7.Source2
4. Gate1 8.Drain
Pin
1. Source 2 5. Drain 1
2. Gate 2 6. Drain 1
3. Source 1 7. Drain 2
4. Gate 1 8. Drain 2
PJ9926A
TSSOP-8
Pin 1 = D
Pin 2 = S 1
Pin 3 = S 1
Pin 4 = G 1
Pin 5 = G 2
Pin 6 = S 2
Pin 7 = S 2
Pin 8 = D
Pin 1 = S 2
Pin 2 = G 2
Pin 3 = S 1
Pin 4 = G 1
Pin 5 = D 1
Pin 6 = D 1
Pin 7 = D 2
Pin 8 = D 2
SOP-8
PJ9926A
Dual N-Channel MOSFET-ESD Protected
2-4 2003/04.rev.A
Preliminary
Parameter Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
12
V
Continuous Drain Current
I
D
6.5
Pulsed Drain Current
I
DM
30
A
T
A
=25
1.5
Maximum Power Dissipation
T
A
=70
P
D
0.96
W
Operating Junction and Storage Temperature Range
T
J,
T
STG
-55 to 150
Lead Temperature (1/8" from case for 5 sec.)
T
L
Junction-to-Foot(Drain) Thermal Resistance
R
JF
35
Junction-to-Ambient Thermal Resistance(PCB mounted)
R
JA
83
/W
Note: 1. Surface mounted on FR4 board t<=10sec.
PJ9926A(rated I
D
=6.5A)
Parameter
Symbol Test
Condition
Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250uA 20
--
--
V
Drain-Source On-State Resistance
R
DS(on)
V
GS
=4.5V, I
D
=6.5A
--
15 22
Drain-Source On-State Resistance
R
DS(on)
V
GS
=3.5V, I
D
=6A
--
17.0 23
Drain-Source On-State Resistance
R
DS(on)
V
GS
=2.5V, I
D
=5.5A
--
20.0 29
m
On Characteristics (Note)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250uA 0.6
0.85
--
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=20V, V
GS
=0V
--
--
1 uA
Gate Body Leakage
I
GSS
V
GS
=12V, V
DS
=0V
--
--
10 uA
On-State Drain Current
I
D(on)
V
DS
5V, V
GS
=4.5V 30
--
--
A
Forward Transconductance
g
fs
V
DS
=10V, I
D
=6.5A
--
30
--
S
Switching Characteristics (Note)
Total Gate Charge
Q
g
--
15.5 30
Gate-Source Charge
Q
gs
--
2
--
Gate-Drain Charge
Q
gd
V
DS
=10V, I
D
=6.5A
V
GS
=4.5V
--
3.5
--
nC
Turn-On Delay Time
t
d(on)
--
0.45 0.6
Turn-On Rise Time
t
r
--
0.65 0.85
Turn-Off Delay Time
t
d(off)
--
4.5 6
Turn-Off Fall Time
t
f
V
DD
=10V, R
L
=10
I
D
=1A, V
GEN
=4.5V
R
G
=6
--
1.7 2.2
us
Maximum Ratings and Thermal Characteristics (T
A
=25
unless otherwise noted)
ELECTRICAL CHARACTERISTICS
PJ9926A
Dual N-Channel MOSFET-ESD Protected
3-4 2003/04.rev.A
Preliminary
Dynamic Characteristics
Input Capacitance
C
iss
--
1360
--
Output Capacitance
C
oss
--
220
--
Reverse Transfer Capacitance
C
rss
V
DS
=10V, V
GS
=0V
f = 1.0MHZ
--
130
--
pF
Source-Drain Diode Characteristics and Maximum Ratings
Max. Diode Forward Current
I
S
--
--
1.5 A
Diode Forward Voltage
V
SD
I
s
=1.5A, V
GS
=0V
--
0.61 1.2 V
Note: Pulse test: pulse width < = 300us, duty cycle < = 2%
ELECTRICAL CHARACTERISTICS
SWITCHING TEST CIRCUIT
SWITCHING WAVEFORMS
PJ9926A
Dual N-Channel MOSFET-ESD Protected
4-4 2003/04.rev.A
Preliminary
SOP-8 Unitmm
B
C
H
G
1
D
E
F
4
A
8
5
J
I
SOP-8 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 4.800 5.000 0.189 0.197
B 3.800 4.000 0.150 0.157
C 5.800 6.200 0.228 0.244
D 1.400 1.500 0.055 0.059
E - 0.100 - 0.004
F 1.27BSC
0.05BSC
G 0.330 0.510 0.013 0.020
H 1.450 1.550 0.057 0.061
I 0.190 0.250 0.007 0.010
J 0.400 1.270 0.016 0.050
0
8
0
8
TSSOP-8 Unitmm
TSSOP-8 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 3.400 3.600 0.133 0.141
B 6.000 6.400 0.236 0.252
C 4.100 4.300 0.161 0.169
D 1.150 1.450 0.045 0.057
E 0.250 0.450 0.010 0.018
F 0.800
0.031
G 0.130 2.000 0.051 0.079
H 0.300 0.700 0.012 0.028
0 10
0 10
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