ChipFind - документация

Электронный компонент: PLL520-10DC

Скачать:  PDF   ZIP
PLL520-10
Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal)
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 09/20/04 Page 1
FEATURES
65MHz to 130MHz Fundamental Mode Crystal.
Output range: 65MHz 800MHz (selectable 1x,
2x, 4x and 8x multipliers).
Low Injection Power for crystal 50uW.
Available outputs: PECL, LVDS, or CMOS (High
Drive (30mA) or Standard Drive (10mA) output).
Integrated variable capacitors.
Supports 3.3V-Power Supply.
Available in die form.
Thickness 10 mil.
DESCRIPTION
PLL520-10 is a VCXO IC specifically designed to
pull frequency fundamental crystals from 65MHz to
130MHz, with an integrated Phase Locked Loop for
selectable 1x (no PLL), 2x, 4x or 8x multipliers. Its
design was optimized to tolerate higher limits of
interelectrode capacitance and bonding capacitance
to improve yield. It achieves very low current into the
crystal resulting in better overall stability. Its internal
varicaps allow an on chip frequency pulling,
controlled by the VCON input.
BLOCK DIAGRAM
DIE CONFIGURATION
DIE SPECIFICATIONS
Name Value
Size
62 x 65 mil
Reverse side
GND
Pad dimensions
80 micron x 80 micron
Thickness 10
mil
OUTPUT SELECTION AND ENABLE
OUTSEL1
(Pad #18)
OUTSEL0
(Pad #25)
Selected Output
0
0
High Drive CMOS
0 1
Standard
CMOS
1 0
LVDS
1 1
PECL
(default)
OE_SELECT
(Pad #9)
OE_CTRL
(Pad #30)
State
0 Tri-state
0
1 (Default)
Output enabled
0 (Default)
Output enabled
1 (Default)
1 Tri-state
Pad #9: Bond to GND to set to "0", bond to VDD to set to "1"
Pad #30: Logical states defined by PECL levels if OE_SELECT (pad
#9) is "1"
Logical states defined by CMOS levels if OE_SELECT is "0"
X+
X-
OE
Q
PLL520-10
VCON
Q
PLL by-pass
SEL
PLL
(Phase
Locked
Loop)
Oscillator
Amplifier
w/
integrated
varicaps
18
19
20
21
23
25
7
13
10
26
29
31
Y
X
(0,0)
(1550,1475)
62
mil
65 mil
24
22
17
16
15
14
12
11
9
8
6
1
2
3
4
5
27
28
30
GN
D
GN
D
GND
GN
D
GN
D
GN
D
GND
B
U
F
OE_SEL^
PECL
LVDS
VDDBUF
VDDBUF
PECLB
LVDSB
CMOS
GNDBUF
OU
TS
EL1^
SE
L
1
^
SE
L
0
^
VD
D
VD
D
VD
D
VD
D
OU
TS
EL0^
XIN
XOUT
VCON
OE
CTRL
SEL2^
SEL3^
NC
Die ID:
A1313-13A
C502A
PLL520-10
Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal)
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 09/20/04 Page 2
FREQUENCY SELECTION TABLE
Pad #28
SEL3
Pad #29
SEL2
Pad #19
SEL1
Pad #20
SEL0
Selected Multiplier
0
0
1
1
Fin x 8
1
0
1
1
Fin x 4
1
1
1
0
Fin x 2
1
1
1
1
No multiplication (no PLL)
All pads have internal pull-ups (default value is 1). Bond to GND to set to 0.
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS SYMBOL
MIN.
MAX.
UNITS
Supply Voltage
V
DD
4.6 V
Input Voltage, dc
V
I
-0.5
V
DD
+0.5 V
Output Voltage, dc
V
O
-0.5
V
DD
+0.5 V
Storage Temperature
T
S
-65 150
C
Ambient Operating Temperature*
T
A
-40 85
C
Junction Temperature
T
J
125
C
Lead Temperature (soldering, 10s)
260
C
ESD Protection, Human Body Model
2
kV
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other
conditions above the operational limits noted in this specification is not implied.
* Note: Operating Temperature is guaranteed by design for all parts (COMMERCIAL and INDUSTRIAL), but tested for COMMERCIAL grade only.
2. Crystal Specifications
PARAMETERS SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
CX+
2
Built-in Capacitance
CX-
2
Inter-electrode capacitance
C
0
65MHz to 130 MHz
(VDD=3.3V)
2.6
pF
C0/C1 ratio (gamma)
350
-
Oscillation Frequency
OF
Fund.
65
130
MHz
PLL520-10
Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal)
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 09/20/04 Page 3
3. Voltage Control Crystal Oscillator
PARAMETERS SYMBOL CONDITIONS MIN.
TYP.
MAX.
UNITS
VCXO Stabilization Time *
T
VCXOSTB
From power valid
10
ms
VCXO Tuning Range
F
XIN
= 100 200MHz;
XTAL C
0
/C
1
< 250
0V
VCON 3.3V
200* ppm
CLK output pullability
VCON=1.65V,
1.65V
100*
ppm
On-chip Varicaps control range
VCON = 0 to 3.3V
4 18*
pF
Linearity
10*
%
VCXO Tuning Characteristic
65
ppm/V
VCON input impedance
60
k
VCON modulation BW
0V
VCON 3.3V, -3dB
25 kHz
Note: Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.
4. General Electrical Specifications
PARAMETERS SYMBOL CONDITIONS
MIN.
TYP.
MAX.
UNITS
Supply Current (Loaded
Outputs)
I
DD
PECL/LVDS/CMOS
100/80/40
mA
Operating Voltage
V
DD
2.97
3.63
V
Output Clock Duty Cycle
@ 50% V
DD
(CMOS)
@ 1.25V (LVDS)
@ V
DD
1.3V (PECL)
45
45
45
50
50
50
55
55
55
%
Short Circuit Current
50
mA
5. Jitter Specifications
PARAMETERS CONDITIONS
MIN.
TYP.
MAX.
UNITS
77.76MHz
2.5
155.52MHz
4
Period jitter RMS
622.08MHz
5
ps
77.76MHz
24
155.52MHz
29
Period jitter peak-to-peak
622.08MHz
32
ps
Integrated 12 kHz to 20 MHz at 77.76MHz
0.5
Integrated 12 kHz to 20 MHz at 155.52MHz
1.5
Integrated jitter RMS
Integrated 12 kHz to 20 MHz at 622.08MHz
1.5
ps
6. Phase Noise Specifications
PARAMETERS FREQUENCY @10Hz @100Hz @1kHz @10kHz @100kHz UNITS
77.76MHz -75
-95
-125
-145
-155
155.52MHz -75
-95
-120
-125
-123
Phase Noise relative
to carrier
622.08MHz -75
-95
-115
-118
-115
dBc/Hz
Note: Phase Noise at VCON = 0V
PLL520-10
Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal)
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 09/20/04 Page 4
7. CMOS Output Electrical Specifications
PARAMETERS SYMBOL CONDITIONS MIN.
TYP.
MAX.
UNITS
I
OH
V
OH
= V
DD
-0.4V, V
DD
=3.3V 30 mA
Output drive current
(High Drive)
I
OL
V
OL
= 0.4V, V
DD
= 3.3V
30
mA
I
OH
V
OH
= V
DD
-0.4V, V
DD
=3.3V 10 mA
Output drive current
(Standard Drive)
I
OL
V
OL
= 0.4V, V
DD
= 3.3V
10
mA
Output Clock Rise/Fall Time
(Standard Drive)
0.3V ~ 3.0V with 15 pF load
2.4
Output Clock Rise/Fall Time
(High Drive)
0.3V ~ 3.0V with 15 pF load
1.2
ns
PLL520-10
Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal)
47745 Fremont Blvd., Fremont, California 94538 Tel (510) 492-0990 Fax (510) 492-0991 www.phaselink.com Rev 09/20/04 Page 5
8. LVDS Electrical Characteristics
PARAMETERS SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Output Differential Voltage
V
OD
247
355
454
mV
V
DD
Magnitude Change
V
OD
-50 50 mV
Output High Voltage
V
OH
1.4
1.6
V
Output Low Voltage
V
OL
0.9
1.1
V
Offset Voltage
V
OS
1.125
1.2
1.375
V
Offset Magnitude Change
V
OS
R
L
= 100
(see figure)
0 3 25 mV
Power-off Leakage
I
OXD
V
out
= V
DD
or GND
V
DD
= 0V
1
10
uA
Output Short Circuit Current
I
OSD
-5.7 -8
mA
9. LVDS Switching Characteristics
PARAMETERS SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
Differential Clock Rise Time
t
r
0.2 0.7 1.0 ns
Differential Clock Fall Time
t
f
R
L
= 100
C
L
= 10 pF
(see figure)
0.2 0.7 1.0 ns
OUT
OUT
V
OD
V
OS
50
50
OUT
V
DIFF
R
L
= 100
C
L
= 10pF
C
L
= 10pF
LVDS Switching Test Circuit
LVDS Levels Test Circuit
LVDS Transistion Time Waveform
OUT
OUT
OUT
0V (Differential)
0V
20%
80%
20%
80%
t
R
t
F
V
DIFF