H1061
PMC Components Pte Ltd. , Singapore, 2000
TRIPLE DIFFUSED SILICON NPN TRANSISTOR
... designed for low frequency power amplifier
MAXIMUM RATINGS
Characteristic Symbol Value
Unit
Collector Base Voltage
V
CBO
100 V
Collector Emitter Voltage
V
CEO
80 V
Emitter Base Voltage
V
EBO
5 V
Collector Current (DC)
I
C
4 A
Collector Current (Peak)
I
C
8 A
Collector power Dissipation
P
C
40 W
Junction Temperature
T
J
150
C
Storage Temperature
T
stg
-55~150
C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol
Test
Condition
Min. Typ. Max. Unit
Collector Cut Off Current
I
CBO
V
CB
= 80V, I
E
= 0A
- - 100
A
Collector Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0A
80 - -
V
DC Current Gain
h
FE
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 0.1A
60
35
-
-
200
-
-
-
Collector Emitter Saturation Voltage
V
CE(sat)
I
C
= 2A, I
B
= 0.2A
- - 1
V
Base Emitter Voltage
V
BE
V
CE
= 4V, I
C
= 1A
- - 1.5
V
Transition Frequency
f
T
V
CE
= 5V, I
C
= 0.5A
- 10 -
MHz
Collector Out put Capacitance
C
ob
V
CB
= 20V, I
E
= 0A, f=1MHz
- 40 -
Pf
Classification of h
FE
Rank B C
Range
60 to 120
100-200
P
MC reserves the right to make changes without further notice to any products herein. PMC makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does
P
MC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the
reader therefore we shall not undertake any responsibility for the exercise of rights by third parties.
HIGH POWER
DISSIPATION
MEDIUM SPEED
POWER
SWITCHING
TO 220AB
1 : Base
2 : Collector (Heat Sink)
3 : Emitter
Unit in mm
TO-220AB
Weight: 1.9g
PDF 
ZIP