BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
1
JUNE 1973 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with the
BD246 Series
q
80 W at 25C Case Temperature
q
10 A Continuous Collector Current
q
15 A Peak Collector Current
q
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150C case temperature at the rate of 0.64 W/C.
3. Derate linearly to 150C free air temperature at the rate of 24 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= 20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (R
BE
= 100
)
BD245
BD245A
BD245B
BD245C
V
CER
55
70
90
115
V
Collector-emitter voltage (I
C
= 30 mA)
BD245
BD245A
BD245B
BD245C
V
CEO
45
60
80
100
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
10
A
Peak collector current (see Note 1)
I
CM
15
A
Continuous base current
I
B
3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
80
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
3
W
Unclamped inductive load energy (see Note 4)
LI
C
2
62.5
mJ
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
250
C
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 5)
I
B
= 0
BD245
BD245A
BD245B
BD245C
45
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 55 V
V
CE
= 70 V
V
CE
= 90 V
V
CE
= 115 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD245
BD245A
BD245B
BD245C
0.4
0.4
0.4
0.4
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
BD245/245A
BD245B/245C
0.7
0.7
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 3 A
I
C
= 10 A
(see Notes 5 and 6)
40
20
4
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.3 A
I
B
= 2.5 A
I
C
= 3 A
I
C
= 10 A
(see Notes 5 and 6)
1
4
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
V
CE
= 4 V
I
C
= 3 A
I
C
= 10 A
(see Notes 5 and 6)
1.6
3
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.56
C/W
R
JA
Junction to free air thermal resistance
42
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 1 A
V
BE(off)
= -3.7 V
I
B(on)
= 0.1 A
R
L
= 20
I
B(off)
= -0.1 A
t
p
= 20 s, dc
2%
0.3
s
t
off
Turn-off time
1
s
3
JUNE 1973 - REVISED MARCH 1997
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
h
FE
- DC Current Gain
10
10
100
1000
TCS633AG
V
CE
= 4 V
T
C
= 25C
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
001
01
10
10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
001
01
10
10
TCS633AB
I
C
= 1 A
I
C
= 3 A
I
C
= 6 A
I
C
= 10 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
1
10
V
BE
- Base-Emitter Voltage - V
06
08
10
12
14
16
18
TCS633AC
V
CE
= 4 V
T
C
= 25C
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
4
JUNE 1973 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
001
01
10
10
100
SAS633AC
BD245
BD245A
BD245B
BD245C
t
p
= 300 s, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
TIS633AA
5
JUNE 1973 - REVISED MARCH 1997
BD245, BD245A, BD245B, BD245C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1
2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
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