BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
1
JUNE 1973 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with the
BD540 Series
q
45 W at 25C Case Temperature
q
5 A Continuous Collector Current
q
Up to 120 V V
CEO
rating
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150C case temperature at the rate of 0.36 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage
BD539
BD539A
BD539B
BD539C
BD539D
V
CBO
40
60
80
100
120
V
Collector-emitter voltage (see Note 1)
BD539
BD539A
BD539B
BD539C
BD539D
V
CEO
40
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
45
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
2
W
Operating free air temperature range
T
A
-65 to +150
C
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 4)
I
B
= 0
BD539
BD539A
BD539B
BD539C
BD539D
40
60
80
100
120
V
I
CES
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
CE
= 120 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD539
BD539A
BD539B
BD539C
BD539D
0.2
0.2
0.2
0.2
0.2
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
V
CE
= 90 V
I
B
= 0
I
B
= 0
I
B
= 0
BD539/539A
BD539B/539C
BD539D
0.3
0.3
0.3
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
I
C
= 0.5 A
I
C
= 1 A
I
C
= 3 A
(see Notes 4 and 5)
40
30
12
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 125 mA
I
B
= 375 mA
I
B
= 1 A
I
C
= 1 A
I
C
= 3 A
I
C
= 5 A
(see Notes 4 and 5)
0.25
0.8
1.5
V
V
BE(on)
Base-emitter
voltage
V
CE
= 4 V
I
C
= 3 A
(see Notes 4 and 5)
1.25
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
2.78
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 1 A
V
BE(off)
= -4.3 V
I
B(on)
= 0.1 A
R
L
= 30
I
B(off)
= -0.1 A
t
p
= 20 s, dc
2%
0.5
s
t
off
Turn-off time
2
s
3
JUNE 1973 - REVISED MARCH 1997
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
001
01
10
10
h
FE
- DC Current Gain
10
100
1000
TCS631AH
V
CE
= 4 V
t
p
= 300 s, duty cycle < 2%
T
C
= 25C
T
C
= 80C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - mA
01
10
10
100
1000
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
001
01
10
10
TCS631AB
I
C
= 100 mA
I
C
= 300 mA
I
C
= 1 A
I
C
= 3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
001
01
10
10
V
BE
- Base-Emitter Voltage - V
05
06
07
08
09
10
TCS631AC
V
CE
= 4 V
T
C
= 25C
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
4
JUNE 1973 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
001
01
10
10
SAS631AI
BD539
BD539A
BD539B
BD539C
BD539D
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
50
TIS631AC
5
JUNE 1973 - REVISED MARCH 1997
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
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