BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
AUGUST 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
BDT60, BDT60A, BDT60B and BDT60C
q
50 W at 25C Case Temperature
q
4 A Continuous Collector Current
q
Minimum h
FE
of 750 at 1.5 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.4 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDT61
BDT61A
BDT61B
BDT61C
V
CBO
60
80
100
120
V
Collector-emitter voltage (I
B
= 0)
BDT61
BDT61A
BDT61B
BDT61C
V
CEO
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
4
A
Continuous base current
I
B
0.1
A
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
P
tot
50
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
P
tot
2
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Operating free-air temperature range
T
A
-65 to +150
C
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
2
AUGUST 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
I
B
= 0
(see Note 3)
BDT61
BDT61A
BDT61B
BDT61C
60
80
100
120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BDT61
BDT61A
BDT61B
BDT61C
0.5
0.5
0.5
0.5
mA
I
CBO
Collector cut-off
current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150C
T
C
= 150C
T
C
= 150C
T
C
= 150C
BDT61
BDT61A
BDT61B
BDT61C
BDT61
BDT61A
BDT61B
BDT61C
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
5
mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V
I
C
= 1.5 A
(see Notes 3 and 4)
750
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 6 mA
I
C
= 1.5 A
(see Notes 3 and 4)
2.5
V
V
BE(on)
Base-emitter
voltage
V
CE
= 3 V
I
C
= 1.5 A
(see Notes 3 and 4)
2.5
V
V
EC
Parallel diode
forward voltage
I
E
= 1.5 A
I
B
= 0
2
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
2.5
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 2 A
V
BE(off)
= -5 V
I
B(on)
= 8 mA
R
L
= 20
I
B(off)
= -8 mA
t
p
= 20
s, dc
2%
1
s
t
off
Turn-off time
4.5
s
3
AUGUST 1993 - REVISED MARCH 1997
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
50
10
h
FE
- Typical DC Current Gain
20000
100
1000
10000
TCS110AD
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= 3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
50
10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
05
10
15
20
TCS110AB
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
50
10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
05
10
15
20
25
30
TCS110AC
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
4
AUGUST 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
0.01
01
10
10
SAS110AB
BDT61
BDT61A
BDT61B
BDT61C
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
50
60
TIS110AA
5
AUGUST 1993 - REVISED MARCH 1997
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
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