BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
SEPTEMBER 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
q
80 W at 25C Case Temperature
q
12 A Continuous Collector Current
q
Minimum h
FE
of 750 at 3 V, 5 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.64 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDW93
BDW93A
BDW93B
BDW93C
V
CBO
45
60
80
100
V
Collector-emitter voltage (I
B
= 0)
BDW93
BDW93A
BDW93B
BDW93C
V
CEO
45
60
80
100
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
12
A
Continuous base current
I
B
0.3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
P
tot
80
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
P
tot
2
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Operating free-air temperature range
T
A
-65 to +150
C
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
2
SEPTEMBER 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 100 mA
I
B
= 0
(see Note 3)
BDW93
BDW93A
BDW93B
BDW93C
45
60
80
100
V
I
CEO
Collector-emitter
cut-off current
V
CB
= 40 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 80 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BDW93
BDW93A
BDW93B
BDW93C
1
1
1
1
mA
I
CBO
Collector cut-off
current
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150C
T
C
= 150C
T
C
= 150C
T
C
= 150C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
0.1
0.1
0.1
0.1
5
5
5
5
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
2
mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
I
C
= 3 A
I
C
= 10 A
I
C
= 5 A
(see Notes 3 and 4)
1000
100
750
20000
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 20 mA
I
B
= 100 mA
I
C
= 5 A
I
C
= 10 A
(see Notes 3 and 4)
2
3
V
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 20 mA
I
B
= 100 mA
I
C
= 5 A
I
C
= 10 A
(see Notes 3 and 4)
2.5
4
V
V
EC
Parallel diode
forward voltage
I
E
= 5 A
I
E
= 10 A
I
B
= 0
I
B
= 0
2
4
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.56
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
3
SEPTEMBER 1993 - REVISED MARCH 1997
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
h
FE
- Typical DC Current Gain
50000
100
1000
10000
TCS130AE
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= 3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
05
10
15
20
25
30
TCS130AG
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
20
10
10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
05
10
15
20
25
30
TCS130AI
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
4
SEPTEMBER 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
20
40
60
80
100
TIS130AA
5
SEPTEMBER 1993 - REVISED MARCH 1997
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
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