BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
1
AUGUST 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed for Complementary Use with
BDX34, BDX34A, BDX34B, BDX34C and
BDX34D
q
70 W at 25C Case Temperature
q
10 A Continuous Collector Current
q
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
V
CBO
45
60
80
100
120
V
Collector-emitter voltage (I
B
= 0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
V
CEO
45
60
80
100
120
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
10
A
Continuous base current
I
B
0.3
A
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
P
tot
70
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
P
tot
2
W
Operating free air temperature range
T
J
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Operating free-air temperature range
T
A
-65 to +150
C
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
2
AUGUST 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 100 mA
I
B
= 0
(see Note 3)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
45
60
80
100
120
V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CE
= 30 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
0.5
0.5
0.5
0.5
0.5
10
10
10
10
10
mA
I
CBO
Collector cut-off
current
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
T
C
= 100C
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
1
1
1
1
1
5
5
5
5
5
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
10
mA
h
FE
Forward current
transfer ratio
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
750
750
750
750
750
V
BE(on)
Base-emitter
voltage
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
V
CE
= 3 V
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
V
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 8 mA
I
B
= 8 mA
I
B
= 6 mA
I
B
= 6 mA
I
B
= 6 mA
I
C
= 4 A
I
C
= 4 A
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
V
V
EC
Parallel diode
forward voltage
I
E
= 8 A
I
B
= 0
4
V
3
AUGUST 1993 - REVISED MARCH 1997
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.78
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 3 A
V
BE(off)
= -3.5 V
I
B(on)
= 12 mA
R
L
= 10
I
B(off)
= -12 mA
t
p
= 20
s, dc
2%
1
s
t
off
Turn-off time
5
s
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
4
AUGUST 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
h
FE
- Typical DC Current Gain
50000
100
1000
10000
TCS130AF
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= 3 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
05
10
15
20
TCS130AH
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
05
10
10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
05
10
15
20
25
30
TCS130AJ
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
5
AUGUST 1993 - REVISED MARCH 1997
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
tot
- Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80
TIS130AB
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
6
AUGUST 1993 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
7
AUGUST 1993 - REVISED MARCH 1997
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1997, Power Innovations Limited
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