TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
1
MARCH 1988 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
2 A Continuous On-State Current
q
15 A Surge-Current
q
Glass Passivated Wafer
q
400 V to 600 V Off-State Voltage
q
Max I
GT
of 200 A
q
Package Options
PACKAGE
PACKING
PART # SUFFIX
LP
Bulk
(None)
LP with fomed leads
Tape and Reel
R
LP PACKAGE
(TOP VIEW)
MDC1AA
G
A
K
1
2
3
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
MDC1AB
G
A
K
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k
.
2. These values apply for continuous dc operation with resistive load. Above 85C derate linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TICP106D
TICP106M
V
DRM
400
600
V
Repetitive peak reverse voltage
TICP106D
TICP106M
V
RRM
400
600
V
Continuous on-state current at (or below) 85C case temperature (see Note 2)
I
T(RMS)
2
A
Surge on-state current (see Note 3)
I
TSM
15
A
Peak positive gate current (pulse width
300
s)
I
GM
0.2
A
Average gate power dissipation (see Note 4)
P
G(AV)
0.3
W
Operating case temperature range
T
C
-40 to +110
C
Storage temperature range
T
stg
-40 to +125
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
230
C
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
2
MARCH 1988 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTE
5: This parameter must be measured using pulse techniques, t
p
= 1 ms, duty cycle
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
R
GK
= 1 k
20
A
I
RRM
Repetitive peak
reverse current
V
R
= rated V
RRM
I
G
= 0
200
A
I
GT
Gate trigger current
V
AA
= 6 V
R
L
= 100
t
p(g)
20
s
60
200
A
V
GT
Gate trigger voltage
V
AA
= 6 V
R
L
= 100
R
GK
= 1 k
t
p(g)
20 s
0.4
1
V
I
H
Holding current
V
AA
= 6 V
R
GK
= 1 k
Initiating I
T
= 10 mA
5
mA
V
TM
Peak on-state
voltage
I
TM
= 1 A
(see Note 5)
1.5
V
3
MARCH 1988 - REVISED MARCH 1997
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
ALL LINEAR DIMENSIONS IN MILLIMETERS
12,7 MIN.
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
1,14
1,40
2,41
2,67
0,35
0,41
2,03
2,67
3,17
4,19
(see Note A)
Seating Plane
1
2
3
LP003 (TO-92)
LP003 Falls Within JEDEC
TO-226AA Dimensions
MDXXAX
1,27
NOTE A: Lead dimensions are not controlled in this area.
ALL LINEAR DIMENSIONS IN MILLIMETERS
12,7 MIN.
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
1,14
1,40
2,41
2,67
0,35
0,41
2,03
2,67
3,17
4,19
(see Note A)
Seating Plane
1
2
3
LP003 (TO-92)
LP003 Falls Within JEDEC
TO-226AA Dimensions
MDXXAX
1,27
NOTE A: Lead dimensions are not controlled in this area.
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
4
MARCH 1988 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
LP003 (TO-92) - Formed Leads Version
ALL LINEAR DIMENSIONS IN MILLIMETERS
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
2,40
2,90
0,35
0,41
2,03
2,67
3,17
4,19
4,00 MAX.
2,90
2,40
LP003 Falls Within JEDEC
TO-226AA Dimensions
1
2
3
MDXXAR
5
MARCH 1988 - REVISED MARCH 1997
TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
P R O D U C T I N F O R M A T I O N
LPR
tape dimensions
MECHANICAL DATA
LP Package (TO-92) Tape (Formed Lead Version)
ALL LINEAR DIMENSIONS IN MILLIMETERS
0,00
0,50
5,50
19,00
8,50
9,75
17,50
19,00
3,70
4,30
12,40
13,00
5,95
6,75
2,40
2,90
8,50
11,00
15,50
16,50
17,66
27,68
23,00
32,00
11,70
13,70
2,50 MIN.
2,90
2,40
4,44
5,21
2,03
2,67
3,43 MIN.
4,32
5,34
4,00 MAX.
0,40
0,56
3,17
4,19
2,03
2,67
0,35
0,41
MDXXAS
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