TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
1
MAY 1989 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
20 W Pulsed Power Dissipation
q
100 V Capability
q
2 A Continuous Collector Current
q
4 A Peak Collector Current
q
Customer-Specified Selections Available
LP PACKAGE
(TOP VIEW)
MDTRAB
E
C
B
1
2
3
absolute maximum ratings
at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.3 ms, duty cycle
10%.
2. Derate linearly to 150C case temperature at the rate of 6.4 mW/C.
3. V
CE
= 20 V, I
C
= 1 A, t
p
= 10 ms, duty cycle
2%.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
TIPP31
TIPP31A
TIPP31B
TIPP31C
V
CBO
40
60
80
100
V
Collector-emitter voltage (I
B
= 0)
TIPP31
TIPP31A
TIPP31B
TIPP31C
V
CEO
40
60
80
100
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
2
A
Peak collector current (see Note 1)
I
CM
4
A
Continuous base current
I
B
1
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
0.8
W
Pulsed power dissipation (see Note 3)
P
T
20
W
Operating junction temperature range
T
j
-55 to +150
C
Storage temperature range
T
stg
-55 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
2
MAY 1989 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 5 mA
(see Note 4)
I
B
= 0
TIPP31
TIPP31A
TIPP31B
TIPP31C
40
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
TIPP31
TIPP31A
TIPP31B
TIPP31C
0.2
0.2
0.2
0.2
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
TIPP31/31A
TIPP31B/31C
0.3
0.3
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 2 A
(see Notes 4 and 5)
20
10
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 375 mA
I
C
= 2 A
(see Notes 4 and 5)
1
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
I
C
= 2 A
(see Notes 4 and 5)
1.5
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
3
MAY 1989 - REVISED MARCH 1997
TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
ALL LINEAR DIMENSIONS IN MILLIMETERS
12,7 MIN.
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
1,14
1,40
2,41
2,67
0,35
0,41
2,03
2,67
3,17
4,19
(see Note A)
Seating Plane
1
2
3
LP003 (TO-92)
LP003 Falls Within JEDEC
TO-226AA Dimensions
MDXXAX
1,27
NOTE A: Lead dimensions are not controlled in this area.
TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
4
MAY 1989 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
LP003 (TO-92)
3-pin cylindical plastic package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
LP003 (TO-92) - Formed Leads Version
ALL LINEAR DIMENSIONS IN MILLIMETERS
2,03
2,67
4,44
5,21
3,43 MIN.
4,32
5,34
0,40
0,56
2,40
2,90
0,35
0,41
2,03
2,67
3,17
4,19
4,00 MAX.
2,90
2,40
LP003 Falls Within JEDEC
TO-226AA Dimensions
1
2
3
MDXXAR
5
MAY 1989 - REVISED MARCH 1997
TIPP31, TIPP31A, TIPP31B, TIPP31C
NPN SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
LPR
tape dimensions
MECHANICAL DATA
LP Package (TO-92) Tape (Formed Lead Version)
ALL LINEAR DIMENSIONS IN MILLIMETERS
0,00
0,50
5,50
19,00
8,50
9,75
17,50
19,00
3,70
4,30
12,40
13,00
5,95
6,75
2,40
2,90
8,50
11,00
15,50
16,50
17,66
27,68
23,00
32,00
11,70
13,70
2,50 MIN.
2,90
2,40
4,44
5,21
2,03
2,67
3,43 MIN.
4,32
5,34
4,00 MAX.
0,40
0,56
3,17
4,19
2,03
2,67
0,35
0,41
MDXXAS
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