Specifications are subject to change without notice.
21
SEPTEMBER 1993 - REVISED OCTOBER 2000
TISP1xxxF3 Overvoltage Protector Series
TISP1072F3,TISP1082F3
DUAL FORWARD-CONDUCTING UNIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
SL Package (Top View)
P Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current <10
A
Rated for International Surge Wave Shapes
How To Order
D Package (Top View)
Description
These dual forward-conducting unidirectional over-voltage
protectors are designed for the overvoltage protection of ICs
used for the SLIC (Subscriber Line Interface Circuit) function.
The IC line driver section is typically powered with 0 V and a
negative supply. The TISP1xxxF3 limits voltages that exceed
these supply rails and is offered in two voltage variants to match
typical negative supply voltage values.
High voltages can occur on the line as a result of exposure to
lightning strikes and a.c. power surges. Negative transients are
initially limited by breakdown clamping until the voltage rises to
the breakover level, which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as the current
subsides. Positive transients are limited by diode forward conduc-
tion. These protectors are guaranteed to suppress and withstand
the listed international lightning surges on any terminal pair.
.............................................. UL Recognized Component
DEVICE
V
DRM
V
V
(BO)
V
`1072F3
- 58
- 72
`1082F3
- 66
- 82
Waveshape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
80
8/20
s
IEC 61000-4-5
70
10/160
s
FCC Part 68
60
10/700
s
ITU-T K.20/21
FCC Part 68
50
10/560
s
FCC Part 68
45
10/1000
s
GR-1089-CORE
35
1
2
3
4
5
6
7
8
G
G
G
G
NC
T
R
NC
NC - No internal connection
R
G
T
G
T
G
G
R
1
2
3
4
5
6
7
8
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MD1XAB
1
2
3
T
G
R
G
T
R
SD1XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Device
Package
Carrier
Order As
TISP1xxxF3
D, Small-outline
Tape And Reeled
TISP1xxxF3DR
P, Plastic Dip
Tube
TISP1xxxF3P
SL, Single-in-line
Tube
TISP1xxxF3SL
Insert xxx value corresponding to protection voltages of 072 and 082
Specifications are subject to change without notice.
22
SEPTEMBER 1993 - REVISED OCTOBER 2000
Electrical Characteristics for R and T Terminal Pair, TA = 25 C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0
C < T
A
< 70
C
`1072F3
`1082F3
V
DRM
-58
-66
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
120
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
80
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
resistor)
50
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
70
10/160 (FCC Part 68, 10/160 voltage wave shape)
60
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
55
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
50
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
50
10/560 (FCC Part 68, 10/560 voltage wave shape)
45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
35
Non-repetitive peak on-state current, 0
C < T
A
< 70
C (see Notes 1 and 3)
50 Hz,
1 s
D Package
P Package
SL Package
I
TSM
4.3
5.7
7.1
A
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/
s
Junction temperature
T
J
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP
must be in thermal equilibrium with 0
C < T
J
<70
C. The surge may be repeated after the TISP
returns to its
initial conditions.
3. Above 70
C, derate linearly to zero at 150 C lead temperature.
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
=
V
DRM
, 0
C < T
A
< 70
C
10
A
I
D
Off-state current
V
D
=
50 V
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV
V
D
= 0
(see Note 4)
D Package
P Package
SL Package
0.08
0.06
0.02
0.5
0.4
0.3
pF
NOTE
4: Further details on capacitance are given in the Applications Information section.
Description (continued)
TISP1xxxF3 Overvoltage Protector Series
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by
breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to
suppress and withstand the listed international lightning surges on any terminal pair.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are
virtually transparent to the system in normal operation.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Specifications are subject to change without notice.
23
SEPTEMBER 1993 - REVISED OCTOBER 2000
Electrical Characteristics for T and G or R and G Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0
C < T
A
< 70
C
-10
A
V
(BO)
Breakover voltage
dv/dt = -250 V/ms,
R
SOURCE
= 300
`1072F3
`1082F3
-72
-82
V
V
(BO)
Impulse breakover
voltage
dv/dt
-1000 V/
s, Linear voltage ramp,
Maximum ramp value = -500 V
R
SOURCE
= 50
`1072F3
`1082F3
-78
-92
V
I
(BO)
Breakover current
dv/dt = -250 V/ms,
R
SOURCE
= 300
-0.1
-0.6
A
V
FRM
Peak forward recovery
voltage
dv/dt
+1000 V/
s, Linear voltage ramp,
Maximum ramp value = +500 V
R
SOURCE
= 50
`1072F3
`1082F3
3.3
3.3
V
V
T
On-state voltage
I
T
= -5 A, t
W
= 100
s
-3
V
V
F
On-state voltage
I
T
= +5 A, t
W
= 100
s
+3
V
I
H
Holding current
I
T
= -5 A, di/dt = +30 mA/ms
-0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
-5
kV/
s
I
D
Off-state current
V
D
= -50 V
-10
A
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= 0
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= -5 V
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= -50 V
(see Note 4)
`1072F3
`1082F3
`1072F3
`1082F3
`1072F3
`1082F3
150
130
65
55
30
25
240
240
104
104
48
48
pF
NOTE
5: Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
TISP1xxxF3 Overvoltage Protector Series
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25
C
5 cm
2
, FR4 PCB
D Package
160
C/W
P Package
100
SL Package
135
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