Specifications are subject to change without notice.
38
MARCH 1994 - REVISED OCTOBER 2000
TISP30xxF3 (LV) Overvoltage Protector Series
TISP3072F3,TISP3082F3
LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
Device Symbol
SL Package (Top View)
P Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current <10
A
Rated for International Surge Wave Shapes
These low-voltage dual bidirectional thyristor protectors are
designed to protect ISDN applications against transients caused
by lightning strikes and a.c. power lines. Offered in two voltage
variants to meet battery and protection requirements, they are
guaranteed to suppress and withstand the listed international
lightning surges in both polarities. Transients are initially clipped
by breakdown clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in
ion-implanted planar structures to ensure precise and matched
breakover control and are virtually transparent to the system in
normal operation.
How To Order
D Package (Top View)
Description
.............................................. UL Recognized Component
DEVICE
V
DRM
V
V
(BO)
V
`3072F3
58
72
`3082F3
66
82
Waveshape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
80
8/20
s
IEC 61000-4-5
70
10/160
s
FCC Part 68
60
10/700
s
ITU-T K.20/21
FCC Part 68
50
10/560
s
FCC Part 68
45
10/1000
s
GR-1089-CORE
35
1
2
3
4
5
6
7
8
G
G
G
G
NC
T
R
NC
NC - No internal connection
R
G
T
G
T
G
G
R
1
2
3
4
5
6
7
8
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
MD1XAB
1
2
3
T
G
R
Device
Package
Carrier
Order As
TISP30xxF3
D, Small-outline
Tape And Reeled
TISP30xxF3DR
P, Plastic Dip
Tube
TISP30xxF3P
SL, Single-in-line
Tube
TISP30xxF3SL
Insert xx value corresponding to protection voltages of 72 and 82
G
T
R
SD3XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Specifications are subject to change without notice.
39
MARCH 1994 - REVISED OCTOBER 2000
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0
C < T
A
< 70
C
`3072F3
`3082F3
V
DRM
58
66
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
120
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
80
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
resistor)
50
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
70
10/160 (FCC Part 68, 10/160 voltage wave shape)
60
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
55
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
50
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
50
10/560 (FCC Part 68, 10/560 voltage wave shape)
45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
35
Non-repetitive peak on-state current, 0
C < T
A
< 70
C (see Notes 1 and 3)
50 Hz,
1 s
D Package
P Package
SL Package
I
TSM
4.3
5.7
7.1
A
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/
s
Junction temperature
T
J
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP
must be in thermal equilibrium with 0
C < T
J
<70
C. The surge may be repeated after the TISP
returns to its
initial conditions.
3. Above 70
C, derate linearly to zero at 150 C lead temperature.
Electrical Characteristics for the T and R terminals, TA = 25 C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
=
2V
DRM
, 0
C < T
A
< 70
C
10
A
I
D
Off-state current
V
D
=
50 V
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV , V
D
= 0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
D Package
P Package
SL Package
0.05
0.065
0.03
0.15
0.2
0.1
pF
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
TISP30xxF3 (LV) Overvoltage Protector Series
Specifications are subject to change without notice.
40
MARCH 1994 - REVISED OCTOBER 2000
Electrical Characteristics for T and G or R and G Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
=
V
DRM
, 0
C < T
A
< 70
C
10
A
V
(BO)
Breakover voltage
dv/dt =
250 V/ms, R
SOURCE
= 300
`3072F3
`3082F3
72
82
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value =
500 V
R
SOURCE
= 50
`3072F3
`3082F3
86
96
V
I
(BO)
Breakover current
dv/dt =
250 V/ms, R
SOURCE
= 300
0.1
0.6
A
V
T
On-state voltage
I
T
=
5 A, t
W
= 100
s
3
V
I
H
Holding current
I
T
=
5 A, di/dt = -/+30 mA/ms
0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
10
A
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= 0
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= -5 V
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= -50 V
(see Notes 5 and 6)
82
49
25
140
85
40
pF
NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
TISP30xxF3 (LV) Overvoltage Protector Series
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25
C
5 cm
2
, FR4 PCB
D Package
160
C/W
P Package
100
SL Package
135
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