TISP3082L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
1
FEBRUARY 1990 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current
< 10 A
q
Rated for International Surge Wave Shapes
description
The TISP3082L is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of two bidirectional
suppressor elements connected to a Common
(C) terminal. These devices will supress voltage
transients between terminals A and C, B and C,
and A and B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
DEVICE
V
(Z)
V
V
(BO)
V
`3082L
58
82
WAVE SHAPE
STANDARD
I
TSP
A
8/20 s
ANSI C62.41
100
10/160 s
FCC Part 68
60
10/560 s
FCC Part 68
45
0.2/310 s
RLM 88
38
10/700 s
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 s
REA PE-60
35
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
device symbol
TISP3082L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
FEBRUARY 1990 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
absolute maximum ratings at
25C case temperature (unless otherwise noted)
NOTES: 1. Above 70C, derate linearly to zero at 150C case temperature
2. This value applies when the initial case temperature is at (or below) 70C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT's quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
NOTES: 5. These parameters must be measured using pulse techniques, t
w
= 100
s, duty cycle
2%.
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum).
RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s)
100
10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s)
60
5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s)
50
0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s)
38
5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s)
50
5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s)
50
10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s)
45
10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s)
35
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2)
I
TSM
10
A rms
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/s
Junction temperature
T
J
150
C
Operating free - air temperature range
0 to 70
C
Storage temperature range
T
stg
-40 to +150
C
Lead temperature 1.5 mm from case for 10 s
T
lead
260
C
electrical characteristics for the A and B terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
=
1mA
116
V
I
D
Off-state leakage
current
V
D
=
50 V
10
A
C
off
Off-state capacitance
V
D
=
0
f = 1 kHz
(see Note 4)
0.5
5
pF
electrical characteristics for the A and C or the B and C terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
=
1mA
58
V
V
Z
Temperature coefficient
of reference voltage
0.1
%/
o
C
V
(BO)
Breakover voltage
(see Notes 5 and 6)
82
V
I
(BO)
Breakover current
(see Note 5)
0.15
0.6
A
V
TM
Peak on-state voltage
I
T
=
5 A
(see Notes 5 and 6)
2.2
3
V
I
H
Holding current
(see Note 5)
150
mA
dv/dt
Critical rate of rise of
off-state voltage
(see Note 7)
5
kV/
s
I
D
Off-state leakage
current
V
D
=
50 V
10
A
C
off
Off-state capacitance
V
D
= 0
f = 1 kHz
(see Note 4)
70
150
pF
3
FEBRUARY 1990 - REVISED SEPTEMBER 1997
TISP3082L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
100
C/W
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
TISP3082L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
FEBRUARY 1990 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
SOT-82
3-pin plastic single-in-line package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-82
ALL LINEAR DIMENSIONS IN MILLIMETERS
7,4
7,8
10,5
10,8
4,4 typ
2,2 typ
0,7
0,9
2,54 typ
0,49
0,75
1,2 typ
2,4
2,7
15,7 typ
Exposed
Heat Slug
1
2
3
NOTE A: The centre pin is in electrical contact with the heat slug.
MDXXAQ
5
FEBRUARY 1990 - REVISED SEPTEMBER 1997
TISP3082L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1997, Power Innovations Limited
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