TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
1
NOVEMBER 1986 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current
< 10 A
q
Rated for International Surge Wave Shapes
q
UL Recognized, E132482
description
The TISP3180 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of two bidirectional
suppressor elements connected to a Common
(C) terminal. They will supress voltage transients
between terminals A and C, B and C, and A and
B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
DEVICE
V
(Z)
V
V
(BO)
V
`3180
145
180
WAVE SHAPE
STANDARD
I
TSP
A
8/20 s
ANSI C62.41
150
10/160 s
FCC Part 68
60
10/560 s
FCC Part 68
45
0.2/310 s
RLM 88
38
10/700 s
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 s
REA PE-60
50
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
device symbol
TO-220 PACKAGE
(TOP VIEW)
A(T)
C(G)
B(R)
Pin 2 is in electrical contact with the mounting base.
MDXXANA
1
2
3
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
absolute maximum ratings at
25C case temperature (unless otherwise noted)
NOTES: 1. Above 70C, derate linearly to zero at 150C case temperature
2. This value applies when the initial case temperature is at (or below) 70C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT's quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
NOTES: 5. These parameters must be measured using pulse techniques, t
w
= 100
s, duty cycle
2%.
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum)..
RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s)
150
10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s)
60
5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s)
50
0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s)
38
5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s)
50
5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s)
50
10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s)
45
10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s)
50
Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2)
I
TSM
10
A rms
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/s
Junction temperature
T
J
150
C
Operating free - air temperature range
0 to 70
C
Storage temperature range
T
stg
-40 to +150
C
Lead temperature 1.5 mm from case for 10 s
T
lead
260
C
electrical characteristics for the A and B terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
=
1mA
290
V
I
D
Off-state leakage
current
V
D
=
50 V
10
A
C
off
Off-state capacitance
V
D
=
0
f = 1 kHz
(see Note 4)
0.5
5
pF
electrical characteristics for the A and C or the B and C terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
Z
Reference zener
voltage
I
Z
=
1mA
145
V
V
Z
Temperature coefficient
of reference voltage
0.1
%/
o
C
V
(BO)
Breakover voltage
(see Notes 5 and 6)
180
V
I
(BO)
Breakover current
(see Note 5)
0.15
0.6
A
V
TM
Peak on-state voltage
I
T
=
5 A
(see Notes 5 and 6)
2.2
3
V
I
H
Holding current
(see Note 5)
150
mA
dv/dt
Critical rate of rise of
off-state voltage
(see Note 7)
5
kV/
s
I
D
Off-state leakage
current
V
D
=
50 V
10
A
C
off
Off-state capacitance
V
D
= 0
f = 1 kHz
(see Note 4)
110
200
pF
3
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
62.5
C/W
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
Figure 2.
Figure 3.
ON-STATE CURRENT
V
T
- On-State Voltage - V
1
10
100
I
T
-
O
n
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
1
10
100
1000
TCS3MAA
ON-STATE VOLTAGE
vs
ZENER VOLTAGE & BREAKOVER VOLTAGE
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
V
Z
,
V
(
B
O
)
-
Z
e
n
e
r
V
o
l
t
a
g
e
,
B
r
e
a
k
o
v
e
r
V
o
l
t
a
g
e
-
V
140
145
150
155
160
165
170
175
180
TCS3MAB
JUNCTION TEMPERATURE
V
(BO)
V
Z
vs
5
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
Figure 4.
Figure 5.
Figure 6.
Figure 7.
HOLDING CURRENT & BREAKOVER CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
H
,
I
(
B
O
)
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
,
B
r
e
a
k
o
v
e
r
C
u
r
r
e
n
t
-
A
001
01
1
TCS3MAC
JUNCTION TEMPERATURE
vs
I
H
I
(BO)
OFF-STATE CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0001
001
01
1
10
TCS3MAD
JUNCTION TEMPERATURE
vs
VD = 50 V
ON-STATE VOLTAGE
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
V
T
-
O
n
S
t
a
t
e
V
o
l
t
a
g
e
-
V
0
0
1
2
2
3
3
TCS3MAE
JUNCTION TEMPERATURE
vs
I
T
= 5A
NORMALISED BREAKOVER VOLTAGE
di/dt - Rate of Rise of Principle Current - A/s
0001
001
01
1
10
100
N
o
r
m
a
l
i
s
e
d
B
r
e
a
k
o
v
e
r
V
o
l
t
a
g
e
1.0
1.1
1.2
1.3
1.4
TCS3MAI
vs
RATE OF RISE OF PRINCIPLE CURRENT
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
6
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
Figure 8.
Figure 9.
Figure 10.
OFF-STATE CAPACITANCE
Terminal Voltage (Positive) - V
01
1
10
100
O
f
f
-
S
t
a
t
e
C
a
p
a
c
i
t
a
n
c
e
-
p
F
10
100
TCS3MAJ
TERMINAL VOLTAGE (POSITIVE)
vs
OFF-STATE CAPACITANCE
Terminal Voltage (Negative) - V
01
1
10
100
O
f
f
-
S
t
a
t
e
C
a
p
a
c
i
t
a
n
c
e
-
p
F
10
100
TCS3MAK
TERMINAL VOLTAGE (NEGATIVE)
vs
SURGE CURRENT
Decay Time - s
10
100
1000
M
a
x
i
m
u
m
S
u
r
g
e
C
u
r
r
e
n
t
-
A
10
100
1000
TCS3MAN
vs
DECAY TIME
2
7
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
A and B terminals
Figure 11.
Figure 12.
Figure 13.
ZENER VOLTAGE & BREAKOVER VOLTAGE
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
V
Z
,
V
(
B
O
)
-
Z
e
n
e
r
V
o
l
t
a
g
e
,
B
r
e
a
k
o
v
e
r
V
o
l
t
a
g
e
-
V
280
290
300
310
320
330
340
350
360
TCS3MAF
JUNCTION TEMPERATURE
V
(BO)
V
Z
vs
HOLDING CURRENT & BREAKOVER CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
H
,
I
(
B
O
)
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
,
B
r
e
a
k
o
v
e
r
C
u
r
r
e
n
t
-
A
001
01
1
TCS3MAG
JUNCTION TEMPERATURE
vs
I
H
I
(BO)
OFF-STATE CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0001
001
01
1
10
TCS3MAH
JUNCTION TEMPERATURE
vs
VD = 50 V
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
8
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
A and B terminals
Figure 14.
Figure 15.
OFF-STATE CAPACITANCE
V
AB
- Terminal Voltage (Positive) - V
01
1
10
100
O
f
f
-
S
t
a
t
e
C
a
p
a
c
i
t
a
n
c
e
-
p
F
01
1
TCS3MAL
TERMINAL VOLTAGE (POSITIVE)
vs
OFF-STATE CAPACITANCE
V
AB
- Terminal Voltage (Negative) - V
01
1
10
100
O
f
f
-
S
t
a
t
e
C
a
p
a
c
i
t
a
n
c
e
-
p
F
01
1
TCS3MAM
TERMINAL VOLTAGE (NEGATIVE)
vs
9
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 16.
Figure 17.
Figure 18.
THERMAL RESPONSE
t - Power Pulse Duration - s
00001
0001
001
01
1
10
100
1000
Z
A
-
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
-
C
/
W
01
1
10
100
TIS3MAA
MAXIMUM NON-RECURRENT 50 Hz CURRENT
t - Current Duration - s
001
01
1
10
100
I
R
M
S
-
M
a
x
i
m
u
m
N
o
n
-
R
e
c
u
r
r
e
n
t
5
0
H
z
C
u
r
r
e
n
t
-
A
001
01
1
10
TIS3MAB
CURRENT DURATION
vs
V
GEN
= 250 V
RMS
R
GEN
= 20 to 1000 ohms
T
AMB
= 70C
FREE AIR TEMPERATURE
T
A
- Free Air Temperature - C
0
25
50
75
100
125
150
P
e
r
c
e
n
t
o
f
R
a
t
e
d
P
o
w
e
r
-
%
20
40
60
80
100
TIS3MAC
DERATING CURVE
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
10
NOVEMBER 1986 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
11
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TISP3180
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright 1997, Power Innovations Limited
PDF 
ZIP