Specifications are subject to change without notice.
133
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxF3LM Overvoltage Protector Series
TISP4072F3LM THRU TISP4082F3LM,
TISP4125F3LM THRU TISP4180F3LM,
TISP4240F3LM THRU TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
LMF Package (LM Package with Formed Leads) (Top View)
Device
V
DRM
V
V
(BO)
V
`4072
58
72
`4082
66
82
`4125
100
125
`4150
120
150
`4180
145
180
`4240
180
240
`4260
200
260
`4290
220
290
`4320
240
320
`4380
270
380
Waveshape
Standard
I
TSP
A
10/160
s
FCC Part 68
60
0.5/700
s
I3124
38
10/700
s
ITU-T K.20/21
50
10/560
s
FCC Part 68
45
10/1000
s
REA PE-60
35
How To Order
LM Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
Device Symbol
Device
Package
Carrier
Order As
TISP4xxxF3LM
Straight Lead DO-92 (LM)
Bulk Pack
TISP4xxxF3LM
Tape and Reeled
TISP4xxxF3LMR
Formed Lead DO-92 (LMF)
Tape and Reeled
TISP4xxxF3LMFR
Insert xxx value corresponding to protection voltages of 072, 082, 125 etc.
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
Description
.............................................. UL Recognized Component
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAT
1
2
3
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAKB
1
2
3
Specifications are subject to change without notice.
134
NOVEMBER 1997 - REVISED OCTOBER 2000
Description (continued)
TISP4xxxF3LM Overvoltage Protector Series
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage (0
C < T
J
< 70
C)
`4072
`4082
`4125
`4150
`4180
`4240
`4260
`4290
`4320
`4380
V
DRM
58
66
100
120
145
180
200
220
240
270
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
2/10
s (FCC Part 68, 2/10 s voltage wave shape) excluding `4072 - `4082
175
8/20
s (ANSI C62.41, 1.2/50 s voltage wave shape) excluding `4072 - `4082
120
10/160
s (FCC Part 68, 10/160 s voltage wave shape)
60
5/200
s (VDE 0433, 2 kV, 10/700 s voltage wave shape)
50
0.2/310
s (I3124, 1.5 kV, 0.5/700 s voltage wave shape)
38
5/310
s (ITU-T K.20/21, 1.5 kV, 10/700 s voltage wave shape)
38
5/310
s (FTZ R12, 2 kV, 10/700 s voltage wave shape)
50
10/560
s (FCC Part 68, 10/560 s voltage wave shape)
45
10/1000
s (REA PE-60, 10/1000 s voltage wave shape)
35
2/10
s (FCC Part 68, 2/10 s voltage wave shape) `4072 - `4082 only
80
8/20
s (ANSI C62.41, 1.2/50 s voltage wave shape) `4072 - `4082 only
70
Non-repetitive peak on-state current (see Notes 2 and 3)
I
TSM
4
A
50/60 Hz,
1 s
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-55 to +150
C
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0
C < T
J
< 70
C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70
C, derate linearly to zero at 150 C lead temperature.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels (58 V to 270 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a DO-92
(LM) cylindrical plastic package. The TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxF3LMF is a formed lead DO-92 supplied only on tape and reeled.
Specifications are subject to change without notice.
135
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxF3LM Overvoltage Protector Series
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
=
V
DRM
, 0
C < T
J
< 70
C
10
A
V
(BO)
Breakover voltage
dv/dt =
250 V/ms, R
SOURCE
= 300
`4072
`4082
`4125
`4150
`4180
`4240
`4260
`4290
`4320
`4380
72
82
125
150
180
240
260
290
320
380
V
V
(BO)
Impulse breakover
voltage
dv/dt =
1000 V/s, R
SOURCE
= 50
di/dt < 20 A/
s
`4072
`4082
`4125
`4150
`4180
`4240
`4260
`4290
`4320
`4380
86
96
143
168
198
267
287
317
347
407
V
I
(BO)
Breakover current
dv/dt =
250 V/ms, R
SOURCE
= 300
0.15
0.6
A
V
T
On-state voltage
I
T
=
5 A, t
W
= 100
s
3
V
I
H
Holding current
I
T
=
5 A, di/dt = - /+ 30 mA/ms
0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V r.m.s., V
D
= 0,
f = 100 kHz,
V
d
= 1 V r.m.s., V
D
= -50 V
`4072 - `4082
`4125 - `4180
`4240 - `4380
`4072 - `4082
`4125 - `4180
`4240 - `4380
63
43
44
25
15
11
108
74
74
40
25
20
pF
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
120
C/W
Thermal Characteristics
Electrical Characteristics for R and T Terminals, TJ = 25 C (Unless Otherwise Noted)
Specifications are subject to change without notice.
136
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxF3LM Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage- Current Character istic for R and T Terminals
All Measurements are Referenced to the T Terminal
-v
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAAB
Specifications are subject to change without notice.
137
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxF3LM Overvoltage Protector Series
Typical Characteristics
Figure 2.
Figure 3.
Figure 4.
Figure 5.
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f-
S
t
ate Current -
A
0001
001
01
1
10
100
TC4XAA
V
D
= -50 V
V
D
= 50 V
T
AMIN
- Minimum Ambient Temperature -
C
-40
-35
-30
-25
-20
-15
-10
-5
0
D
e
r
a
t
i
ng Fact
o
r
0.95
0.96
0.97
0.98
0.99
1.00
TC4XAB
'4125
THRU
'4180
'4072
AND
'4082
'4240
THRU
'4380
V
T
- On-State Voltage - V
2
3
4
5
6
7 8 9
1
1
I
T
-
On
-S
ta
te Cu
rren
t
-
A
1
10
100
TC3MAL
-40
C
150
C
25
C
T
A
- Ambient Temperature -
C
-25
0
25
50
75
100
125
150
V
(BO
)
N
o
r
m
al
i
zed t
o
25
C Va
lu
e
0.9
1.0
1.1
TC4XAC
'4240
THRU
'4380
'4072
AND
'4082
'4125
THRU
'4180
'4240
THRU
'4380
'4072
AND
'4082
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
N
o
r
m
a
liz
e
d
H
o
ldin
g Cur
r
e
nt
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4XAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED V(BO)
vs
AMBIENT TEMPERATURE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
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