TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
1
MARCH 1994 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
q
Planar Passivated Junctions
Low Off-State Current
< 10 A
q
Rated for International Surge Wave Shapes
q
Surface Mount and Through-Hole Options
q
UL Recognized, E132482
description
These medium voltage symmetrical transient
voltage suppressor devices are designed to
protect two wire telecommunication applications
against transients caused by lightning strikes
and a.c. power lines. Offered in three voltage
variants to meet battery and protection
requirements they are guaranteed to suppress
and withstand the listed international lightning
surges in both polarities.
Transients are initially clipped by breakdown
clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The
DEVICE
V
DRM
V
V
(BO)
V
`4125F3
100
125
`4150F3
120
150
`4180F3
145
180
WAVE SHAPE
STANDARD
I
TSP
A
2/10 s
FCC Part 68
175
8/20 s
ANSI C62.41
120
10/160 s
FCC Part 68
60
10/560 s
FCC Part 68
45
0.5/700 s
RLM 88
38
10/700 s
FTZ R12
VDE 0433
CCITT IX K17/K20
50
50
50
10/1000 s
REA PE-60
35
PACKAGE
PART # SUFFIX
Small-outline
D
Small-outline taped
and reeled
DR
Single-in-line
SL
high crowbar holding current prevents d.c.
latchup as the current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation
The small-outline 8-pin assignment has been
carefully chosen for the TISP series to maximise
the inter-pin clearance and creepage distances
which are used by standards (e.g. IEC950) to
establish voltage withstand ratings.
device symbol
T
SD4XAE
Terminals T and R correspond to the
alternative line designators of A and B
R
R
R
R
T
T
T
1
2
3
4
5
6
7
8
T
R
D PACKAGE
SL PACKAGE
1
2
D PACKAGE
(TOP VIEW)
SL PACKAGE
(TOP VIEW)
MDXXAI
1
2
3
4
5
6
7
8
R
R
R
R
T
T
T
T
Specified ratings require the connection
of pins 1, 2, 3 and 4 for the T terminal.
1
2
T
R
MDXXAH
MD4XAA
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
2
MARCH 1994 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
absolute maximum ratings
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0C < T
J
<70C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70C, derate linearly to zero at 150C lead temperature.
NOTE
4: Further details on capacitance are given in the Applications Information section.
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (0C < T
J
< 70C)
`4125F3
`4150F3
`4180F3
V
DRM
100
120
145
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
I
TSP
A
1/2 s (Gas tube differential transient, open-circuit voltage wave shape 1/2 s)
350
2/10 s (FCC Part 68, open-circuit voltage wave shape 2/10 s)
175
8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s)
120
10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s)
60
5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s)
50
0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s)
38
5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s)
50
5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s)
50
10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s)
45
10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s)
35
Non-repetitive peak on-state current (see Notes 2 and 3)
D Package
I
TSM
4
A rms
50 Hz,
1 s
SL Package
6
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-40 to +150
C
electrical characteristics for the T and R terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
TISP4125F3
TISP4150F3
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0C < T
J
< 70C
10
10
A
V
(BO)
Breakover voltage
dv/dt = 250 V/ms,
R
SOURCE
= 300
125
150
V
V
(BO)
Impulse breakover volt-
age
dv/dt = 1000 V/s,
R
SOURCE
= 50
,
di/dt < 20 A/s
143
168
V
I
(BO)
Breakover current
dv/dt = 250 V/ms,
R
SOURCE
= 300
0.15
0.6
0.15
0.6
A
V
T
On-state voltage
I
T
= 5 A,
t
W
= 100 s
3
3
V
I
H
Holding current
di/dt = +/-30 mA/ms
0.15
0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
5
5
kV/s
I
D
Off-state current
V
D
= 50 V
10
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV
(see Note 4)
V
D
= 0,
55
95
55
95
pF
V
D
= -5 V
30
50
30
50
pF
V
D
= -50 V
15
25
15
25
pF
electrical characteristics for the T and R terminals, T
J
= 25C
PARAMETER
TEST CONDITIONS
TISP4180F3
UNIT
MIN
TYP
MAX
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0C < T
J
< 70C
10
A
3
MARCH 1994 - REVISED SEPTEMBER 1997
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
NOTE
5: Further details on capacitance are given in the Applications Information section.
V
(BO)
Breakover voltage
dv/dt = 250 V/ms,
R
SOURCE
= 300
180
V
V
(BO)
Impulse breakover volt-
age
dv/dt = 1000 V/s,
R
SOURCE
= 50
,
di/dt < 20 A/s
198
V
I
(BO)
Breakover current
dv/dt = 250 V/ms,
R
SOURCE
= 300
0.15
0.6
A
V
T
On-state voltage
I
T
= 5 A,
t
W
= 100 s
3
V
I
H
Holding current
di/dt = +/-30 mA/ms
0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
5
kV/s
I
D
Off-state current
V
D
= 50 V
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV
(see Note 5)
V
D
= 0,
55
95
pF
V
D
= -5 V
30
50
pF
V
D
= -50 V
15
25
pF
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25C
5 cm
2
, FR4 PCB
D Package
160
C/W
SL Package
105
electrical characteristics for the T and R terminals, T
J
= 25C (continued)
PARAMETER
TEST CONDITIONS
TISP4180F3
UNIT
MIN
TYP
MAX
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
4
MARCH 1994 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
R and T terminals
Figure 2.
Figure 3.
Figure 4.
Figure 5.
OFF-STATE CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
D
-
O
f
f
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
0001
001
01
1
10
100
TC3MAF
JUNCTION TEMPERATURE
vs
V
D
= -50 V
V
D
= 50 V
NORMALISED BREAKDOWN VOLTAGES
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
N
o
r
m
a
l
i
s
e
d
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
s
0.9
1.0
1.1
1.2
TC3MAI
JUNCTION TEMPERATURE
vs
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalised to V
(BR)
I
(BR)
= 100 A and 25C
NORMALISED BREAKDOWN VOLTAGES
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
N
o
r
m
a
l
i
s
e
d
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
s
0.9
1.0
1.1
1.2
TC3HAJ
JUNCTION TEMPERATURE
vs
V
(BO)
V
(BR)
V
(BR)M
Negative Polarity
Normalised to V
(BR)
I
(BR)
= 100 A and 25C
ON-STATE CURRENT
V
T
- On-State Voltage - V
2
3
4
5
6
7 8 9
1
10
I
T
-
O
n
-
S
t
a
t
e
C
u
r
r
e
n
t
-
A
1
10
100
TC3MAL
ON-STATE VOLTAGE
vs
-40C
150C
25C
5
MARCH 1994 - REVISED SEPTEMBER 1997
TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
R and T terminals
Figure 6.
Figure 7.
Figure 8.
Figure 9.
HOLDING CURRENT & BREAKOVER CURRENT
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
I
H
,
I
(
B
O
)
-
H
o
l
d
i
n
g
C
u
r
r
e
n
t
,
B
r
e
a
k
o
v
e
r
C
u
r
r
e
n
t
-
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0
TC3MAH
JUNCTION TEMPERATURE
vs
I
(BO)
I
H
NORMALISED BREAKOVER VOLTAGE
di/dt - Rate of Rise of Principle Current - A/s
0001
001
01
1
10
100
N
o
r
m
a
l
i
s
e
d
B
r
e
a
k
o
v
e
r
V
o
l
t
a
g
e
1.0
1.1
1.2
1.3
TC3MAB
Positive
RATE OF RISE OF PRINCIPLE CURRENT
vs
Negative
OFF-STATE CAPACITANCE
Terminal Voltage - V
01
1
10
O
f
f
-
S
t
a
t
e
C
a
p
a
c
i
t
a
n
c
e
-
p
F
10
100
TC3MAE
50
TERMINAL VOLTAGE
vs
Positive Bias
Negative Bias
OFF-STATE CAPACITANCE
T
J
- Junction Temperature - C
-25
0
25
50
75
100
125
150
O
f
f
-
S
t
a
t
e
C
a
p
a
c
i
t
a
n
c
e
-
p
F
10
100
TC3MAD
JUNCTION TEMPERATURE
vs
500
Terminal Bias = 0
Terminal Bias = 50 V
Terminal Bias = -50 V
PDF 
ZIP