Specifications are subject to change without notice.
258
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxH4BJ Overvoltage Protector Series
TISP4165H4BJ THRU TISP4200H4BJ,
TISP4265H4BJ THRU TISP4350H4BJ
HIGH HOLDING CURRENT
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Symbol
Device
V
DRM
V
V
(BO)
V
`4165
135
165
`4180
145
180
`4200
155
200
`4265
200
265
`4300
230
300
`4350
275
350
Waveshape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
500
8/20
s
IEC 61000-4-5
300
10/160
s
FCC Part 68
250
10/700
s
ITU-T K.20/21
200
10/560
s
FCC Part 68
160
10/1000
s
GR-1089-CORE
100
Rated for International Surge Wave Shapes
1
2
T(A)
R(B)
MDXXBG
How To Order
Device
Package
Carrier
Order As
TISP4xxxH4BJ
BJ (J-Bend DO-214AA/SMB)
Embossed Tape Reeled
TISP4xxxH4BJR
Bulk Pack
TISP4xxxH4BJ
Insert xxx value corresponding to protection voltages of 165 through to 350.
SMBJ Package (Top View)
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g., between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g., 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
ITU-T K.20/21 Rating ....................... 8 kV 10/700, 200 A 5/310
High Holding Current ........................................... 225 mA min.
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Low Differential Capacitance ................................. 67 pF max.
.............................................. UL Recognized Component
Specifications are subject to change without notice.
259
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxH4BJ Overvoltage Protector Series
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (see Note 1)
`4165
`4180
`4200
`4265
`4300
`4350
V
DRM
135
145
155
200
230
275
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10
s (GR-1089-CORE, 2/10 s voltage wave shape)
500
8/20
s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator)
300
10/160
s (FCC Part 68, 10/160 s voltage wave shape)
250
5/200
s (VDE 0433, 10/700 s voltage wave shape)
220
0.2/310
s (I3124, 0.5/700 s voltage wave shape)
200
5/310
s (ITU-T K.20/21, 10/700 s voltage wave shape)
200
5/310
s (FTZ R12, 10/700 s voltage wave shape)
200
10/560
s (FCC Part 68, 10/560 s voltage wave shape)
160
10/1000
s (GR-1089-CORE, 10/1000 s voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
di
T
/dt
400
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH4BJ must be in thermal equilibrium with T
J
= 25
C.
3. The surge may be repeated after the TISP4xxxH4BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/
C for ambient
temperatures above 25
C.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Description
This TISP4xxxH4BJ range consists of six voltage variants to meet various maximum system voltage levels (135 V to 275 V). They are guaran-
teed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a
plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding
current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is available.
Specifications are subject to change without notice.
260
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxH4BJ Overvoltage Protector Series
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
C, (see Note 7)
113
C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
C
50
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Thermal Characteristics
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
Breakover voltage
dv/dt =
750 V/ms, R
SOURCE
= 300
`4165
`4180
`4200
`4265
`4300
`4350
165
180
200
265
300
350
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/s, Linear current ramp,
Maximum ramp value =
10 A
`4165
`4180
`4200
`4265
`4300
`4350
174
189
210
276
311
363
V
I
(BO)
Breakover current
dv/dt =
750 V/ms, R
SOURCE
= 300
0.15
0.8
A
V
T
On-state voltage
I
T
=
5 A, t
W
= 100
s
3
V
I
H
Holding current
I
T
=
5 A, di/dt = -/+30 mA/ms
0.225
0.8
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
T
A
= 85
C
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V rms, V
D
= 0,
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
`4165 thru `4200
`4265 thru `4350
`4165 thru `4200
`4265 thru `4350
`4165 thru `4200
`4265 thru `4350
`4165 thru `4200
`4265 thru `4350
`4165 thru `4200
`4265 thru `4350
80
70
71
60
65
55
30
24
28
22
90
84
79
67
74
62
35
28
33
26
pF
NOTE
6: To avoid possible voltage clipping, the `4125 is tested with V
D
= -98 V.
Specifications are subject to change without notice.
261
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxH4BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAAB
V
DRM
I
DRM
Specifications are subject to change without notice.
262
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxH4BJ Overvoltage Protector Series
Typical Characteristics
Figure 4.
Figure 5.
Figure 2.
Figure 3.
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
|I
D
|
- Off
-S
tate
Cu
rrent -
A
0001
001
01
1
10
100
TCHAG
V
D
=
50 V
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
Nor
m
a
l
i
z
e
d
Br
e
akover
V
o
l
t
a
g
e
0.95
1.00
1.05
1.10
TC4HAF
TC4HAK
V - On-State Voltage - V
0.7
1.5
2
3
4
5
7
1
0
1
I
T
- On
-Stat
e Cu
rren
t
-
A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
T
A
= 25
C
t
W
= 100
s
TC4HAHA
'4265
THRU
'4350
'4165
THRU
'4200
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
Nor
m
a
l
i
z
e
d
Ho
l
d
i
n
g
Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED BREAKDOWN VOLTAGE
vs
JUNCTION TEMPERATURE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
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