Specifications are subject to change without notice.
1
JULY 2000 - REVISED FEBRUARY 2003
TISP4xxxL3AJ Overvoltage Protector Series
TISP4070L3AJ THRU TISP4395L3AJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Device Symbol
SMA (DO-214AC) Package
25% Smaller Placement Area than SMB
Ion-Implanted Breakdown Region
Precise and Stable Voltage
SMAJ Package (Top View)
Rated for International Surge Wave Shapes
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
How To Order
Device
V
DRM
V
V
(BO)
V
`4070
58
70
`4080
65
80
`4090
70
90
`4125
100
125
`4145
120
145
`4165
135
165
`4180
145
180
`4220
160
220
`4240
180
240
`4260
200
260
`4290
230
290
`4320
240
320
`4350
275
350
`4360
290
360
`4395
320
395
MDXXCCE
1
2
R (B)
T (A)
T
R
SD4XAA
T
erminals T and R correspond to the
alternative line designators of A and B
Wave Shape
Standard
I
TSP
A
2/10 s
GR-1089-CORE
125
8/20 s
IEC 61000-4-5
100
10/160 s
FCC Part 68
65
10/700 s
ITU-T K.20/21/45
50
10/560 s
FCC Part 68
40
10/1000 s
GR-1089-CORE
30
Device
Package
Carrier
Order As
TISP 4xxxL3AJ
SMA (DO-214AC)
Embossed Tape Reel Pack
TISP4xxxL3AJR
Insert xxx value corresponding to protection voltages of 070, 080, 090, etc.
............................................ UL Recognized Components
Specifications are subject to change without notice.
2
JULY 2000 - REVISED FEBRUARY 2003
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ
(JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage
and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100
A 10/1000 TISP4xxxH3BJ series in SMB are available.
TISP4xxxL3AJ Overvoltage Protector Series
Description (continued)
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (see Note 1)
`4070
`4080
`4125
`4145
`4165
`4180
`4220
`4240
`4260
`4290
`4350
`4360
`4395
V
DRM
58
65
`4090
70
100
120
135
145
160
180
200
230
`4320
240
275
290
320
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10 s (GR-1089-CORE, 2/10 s voltage wave shape)
125
8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
100
10/160 s (FCC Part 68, 10/160 s voltage wave shape)
65
5/310 s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape)
50
5/310 s (FTZ R12, 10/700 s voltage wave shape)
50
10/560 s (FCC Part 68, 10/560 s voltage wave shape)
40
10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape)
30
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
I
TSM
18
7
1.6
A
20 ms (50 Hz) full sine wave
1 s (50 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/C.
2. Initially, the TISP4xxxL3 must be in thermal equilibrium with T
J
= 25 C.
3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
Specifications are subject to change without notice.
3
JULY 2000 - REVISED FEBRUARY 2003
TISP4xxxL3AJ Overvoltage Protector Series
Recommended Operating Conditions
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted)
Component
Min
Typ
Max
Unit
R
S
series resistor for FCC Part 68, 10/560 type A surge survival
12
series resistor for FCC Part 68, 9/720 type B surge survival
0
series resistor for GR-1089-CORE first- level and second-level surge survival
23
series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
0
series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
7
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
Breakover voltage
dv/dt =
250 V/ms,
R
SOURCE
= 300
`4070
`4080
`4090
`4125
`4145
`4165
`4180
`4220
`4240
`4260
`4290
`4320
`4350
`4360
`4395
70
80
90
125
145
165
180
220
240
260
290
320
350
360
395
V
I
(BO)
Breakover current
dv/dt =
250 V/ms,
R
SOURCE
= 300
0.8
A
I
H
Holding current
I
T
=
5 A, di/dt = +/-30 mA/ms
0.15
0.60
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
`4070, V
D
=
52 V
`4080, V
D
=
59 V
`4090, V
D
=
63 V
`4125, V
D
=
90 V
`4145, V
D
=
108 V
`4165, V
D
=
122 V
`4180, V
D
=
131 V
`4220, V
D
=
144 V
`4240, V
D
=
162 V
`4260, V
D
=
180 V
`4290, V
D
=
207 V
`4320, V
D
=
216 V
`4350, V
D
=
248 V
`4360, V
D
=
261 V
`4395, V
D
=
288 V
2
A
I
D
Off-state current
D
=
50 V
V
10
A
Specifications are subject to change without notice.
4
JULY 2000 - REVISED FEBRUARY 2003
Thermal Characteristics
TISP4xxxL3AJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) (Continued)
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 1 V rms, V
D
= 1 V
f = 1 MHz,
V
d
= 1 V rms, V
D
= 50 V
4070 thru `4090
`4125 thru `4220
`4240 thru `4395
`4070 thru `4090
`4125 thru `4220
`4240 thru `4395
53
40
33
25
18
14
64
48
40
30
22
17
pF
Parameter
Test Conditions
Min
Typ
Max
Unit
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25 C, (see Note 75)
115
C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 C
52
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Specifications are subject to change without notice.
5
JULY 2000 - REVISED FEBRUARY 2003
TISP4xxxL3AJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
-v
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAAB
V
DRM
I
DRM
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