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Электронный компонент: TISP4300H3LMR

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Specifications are subject to change without notice.
242
NOVEMBER 1997 - REVISED OCTOBER 2000
TISP4xxxH3LM Overvoltage Protector Series
TISP4070H3LM THRU TISP4115H3LM,
TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Summary Current Ratings
TISP4xxxH3LM Overview
Summary Electrical Characteristics
Part #
V
DRM
V
V
(BO)
V
V
T
@ I
T
V
I
DRM
A
I
(BO)
mA
I
T
A
I
H
mA
C
o
@ -2 V
pF
Functionally
Replaces
TISP4070H3
58
70
3
5
600
5
150
120
P0640EC
TISP4080H3
65
80
3
5
600
5
150
120
P0720EC
TISP4095H3
75
95
3
5
600
5
150
120
P0900EC
TISP4115H3
90
115
3
5
600
5
150
120
P1100EC
TISP4125H3
100
125
3
5
600
5
150
65
TISP4145H3
120
145
3
5
600
5
150
65
P1300EC
TISP4165H3
135
165
3
5
600
5
150
65
TISP4180H3
145
180
3
5
600
5
150
65
P1500EC
TISP4220H3
160
220
3
5
600
5
150
65
P1800EC
TISP4240H3
180
240
3
5
600
5
150
55
TISP4250H3
190
250
3
5
600
5
150
55
P2300EC
TISP4260H3
200
260
3
5
600
5
150
55
TISP4290H3
220
290
3
5
600
5
150
55
P2600EC
TISP4300H3
230
300
3
5
600
5
150
55
TISP4350H3
275
350
3
5
600
5
150
55
P3100EC
TISP4395H3
320
395
3
5
600
5
150
55
P3500EC
TISP4400H3
300
400
3
5
600
5
150
55
Bourns part has an improved protection voltage
This TISP device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3LM is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These
protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3LM meets the FCC Part 68 "B" ringer voltage requirement and survives the Type A and
B impulse tests. These devices are housed in a through-hole DO-92 package (TO-92 package with cropped center leg).
Parameter
I
TSP
A
I
TSM
A
di/dt
A/
s
Waveshape
2/10
1.2/50, 8/20
10/160
5/320
10/560
10/1000
1 cycle 60 Hz
2/10 Wavefront
Value
500
300
250
200
160
100
60
400
Specifications are subject to change without notice.
243
NOVEMBER 1997 - REVISED OCTOBER 2000
LMF Package (LM Package with Formed Leads) (Top View)
How To Order
LM Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
Device Symbol
Description
TISP4xxxH3LM Overvoltage Protector Series
Low Differential Capacitance ...................................80 pF max.
ITU-T K.20/21 Rating...........................8 kV 10/700, 200 A 5/310
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
.............................................. UL Recognized Component
Device
V
DRM
V
V
(BO)
V
`4070
58
70
`4080
65
80
`4095
75
95
`4115
90
115
`4125
100
125
`4145
120
145
`4165
135
165
`4180
145
180
`4220
160
220
`4240
180
240
`4250
190
250
`4260
200
260
`4290
220
290
`4300
230
300
`4350
275
350
`4395
320
395
`4400
300
400
Waveshape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
500
8/20
s
IEC 61000-4-5
300
10/160
s
FCC Part 68
250
10/700
s
ITU-T K.20/21
200
10/560
s
FCC Part 68
160
10/1000
s
GR-1089-CORE
100
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAT
1
2
3
NC - No internal connection on pin 2
NC
T(A)
R(B)
MD4XAKB
1
2
3
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device
Package
Carrier
Order As
TISP4xxxH3LM
Straight Lead DO-92 (LM)
Bulk Pack
TISP4xxxH3LM
Tape and Reeled
TISP4xxxH3LMR
Formed Lead DO-92 (LMF) Tape and Reeled TISP4xxxH3LMFR
Insert xxx value corresponding to protecti on voltages of 070, 080, 095, 115 etc.
Specifications are subject to change without notice.
244
NOVEMBER 1997 - REVISED OCTOBER 2000
Description (continued)
TISP4xxxH3LM Overvoltage Protector Series
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (see Note 1)
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4220
`4240
`4250
`4260
`4290
`4300
`4350
`4395
`4400
V
DRM
58
65
75
90
100
120
135
145
160
180
190
200
220
230
275
320
300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10
s (GR-1089-CORE, 2/10 s voltage wave shape)
500
8/20
s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
300
10/160
s (FCC Part 68, 10/160 s voltage wave shape)
250
5/200
s (VDE 0433, 10/700 s voltage wave shape)
220
0.2/310
s (I 31-24, 0.5/700 s voltage wave shape)
200
5/310
s (ITU-T K20/21, 10/700 s voltage wave shape)
200
5/310
s (FTZ R12, 10/700 s voltage wave shape)
200
5/320
s (FCC Part 68, 9/720 s voltage wave shape)
200
10/560
s (FCC Part 68, 10/560 s voltage wave shape)
160
10/1000
s (GR-1089-CORE, 10/1000 s voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
2.3
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 100 A
di
T
/dt
400
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3LM must be in thermal equilibrium with T
J
= 25
C.
3. The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/
C for ambient
temperatures above 25
C.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
This TISP4xxxH3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a
DO-92 (LM) cylindrical plastic package. The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reel. For lower rated impulse currents in the DO-92 package, the 50 A 10/
1000 TISP4xxxM3LM series is available.
Specifications are subject to change without notice.
245
NOVEMBER 1997 - REVISED OCTOBER 2000
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
=
V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
Breakover voltage
dv/dt =
750 V/ms, R
SOURCE
= 300
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4220
`4240
`4250
`4260
`4290
`4300
`4350
`4395
`4400
70
80
95
115
125
145
165
180
220
240
250
260
290
300
350
395
400
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000V/s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/s, Linear current ramp,
Maximum ramp value =
10 A
`4070
`4080
`4095
`4115
`4125
`4145
`4165
`4180
`4220
`4240
`4250
`4260
`4290
`4300
`4350
`4395
`4400
78
88
103
124
134
154
174
189
230
250
261
271
301
311
362
408
413
V
I
(BO)
Breakover current
dv/dt =
750 V/ms, R
SOURCE
= 300
0.15
0.6
A
V
T
On-state voltage
I
T
=
5 A, t
W
= 100
s
3
V
I
H
Holding current
I
T
=
5 A, di/dt = - /+30 mA/ms
0.15
0.6
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
T
A
= 85
C
10
A
Electrical Characteristics TA= 25 C (Unless Otherwise Noted)
TISP4xxxH3LM Overvoltage Protector Series
Specifications are subject to change without notice.
246
NOVEMBER 1997 - REVISED OCTOBER 2000
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
C, (see Note 7)
105
C/W
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
C
55
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Thermal Characteristics
Electrical Characteristics TA= 25 C (Unless Otherwise Noted) (continued)
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V rms, V
D
= 0,
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4070 thru `4115
`4125 thru `4220
`4240 thru `4400
`4125 thru `4220
`4240 thru `4400
172
95
92
157
85
80
145
78
72
70
33
28
25
22
218
120
115
200
110
100
185
100
90
90
43
35
33
28
pF
NOTE
6: To avoid possible voltage clipping, the `4125 is tested with V
D
= -98 V.
Parameter
Test Conditions
Min
Typ
Max
Unit
TISP4xxxH3LM Overvoltage Protector Series