RECTIFIER DIODE
AR508LT
Repetitive voltage up to
600
V
Mean forward current
6000
A
Surge current
55
kA
TARGET SPECIFICATION
lug 02 - ISSUE : 4
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
190
600
V
V
RSM
Non-repetitive peak reverse voltage
190
700
V
I
RRM
Repetitive peak reverse current
V=VRRM
190
75
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
6000
A
I
F (AV)
Mean forward current
180 sin ,50 Hz, Tc=85C, double side cooled
6400
A
I
FSM
Surge forward current
Sine wave, 10 ms
190
55
kA
I t
I t
without reverse voltage
15125 x 1E3
As
V
FM
Forward voltage
Forward current =
4500 A
190
0.88
V
V
F(TO)
Threshold voltage
190
0.70
V
r
F
Forward slope resistance
190
0.040
mohm
SWITCHING
t rr
Reverse recovery time
s
Q rr
Reverse recovery charge
190
C
I rr
Peak reverse recovery current
A
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
17
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
5
C/kW
T
j
Operating junction temperature
-30 /
190
C
F
Mounting force
20.0
/ 22.0
kN
Mass
150
g
ORDERING INFORMATION : AR508LT S 06
standard specification
VRRM/100
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR508LT RECTIFIER DIODE
TARGET SPECIFICATION lug 02 - ISSUE : 4
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180
120
90
60
30
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0
2000
4000
6000
8000
10000
I
F(AV)
[A]
P
F(AV)
[W]
DC
180
120
90
60
30
50
70
90
110
130
150
170
190
0
2000
4000
6000
8000
10000
I
F(AV)
[A]
Th [C]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR508LT RECTIFIER DIODE
TARGET SPECIFICATION lug 02 - ISSUE : 4
DISSIPATION CHARACTERISTICS
SINE WAVE
180
120
90
60
30
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0
2000
4000
6000
8000
10000
I
F(AV)
[A]
P
F(AV)
[W]
180
120
90
60
30
50
70
90
110
130
150
170
190
210
0
2000
4000
6000
8000
10000
I
F(AV)
[A]
Th [C]
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
AR508LT RECTIFIER DIODE
TARGET SPECIFICATION lug 02 - ISSUE : 4
Distributed by
FORWARD CHARACTERISTIC
Tj = 190 C
0
2000
4000
6000
8000
10000
12000
14000
16000
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 190 C
0
10
20
30
40
50
60
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO
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