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Электронный компонент: ARF565S32

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FAST RECOVERY DIODE
ARF565
Repetitive voltage up to
3200
V
Mean forward current
1215
A
Surge current
14
kA
FINAL SPECIFICATION
nov 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
3200
V
V
RSM
Non-repetitive peak reverse voltage
150
3300
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
75
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
1215
A
I
F (AV)
Mean forward current
180 square,50 Hz,Th=55C,double side cooled
1220
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
14
kA
I t
I t
reapplied reverse voltage up to 50% VRSM
980 x1E3
As
V
FM
Forward voltage
Forward current =2000 A
150
2.5
V
V
F(TO)
Threshold voltage
150
1.50
V
r
F
Forward slope resistance
150
0.500
mohm
SWITCHING
t rr
Reverse recovery time
I F = 1000 A
5.0
s
Q rr
Reverse recovery charge
di/dt=
100 A/s
150
1000
C
I rr
Peak reverse recovery current
VR =
50 V
420
A
s
Softness (s-factor), min
0.5
V
FR
Peak forward recovery
di/dt=
100 A/s
150
40
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
26
C/kW
T
j
Operating junction temperature
-30 / 150
C
F
Mounting force
18.0 / 20.0
kN
Mass
500
g
ORDERING INFORMATION : ARF565 S 32
standard specification
VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
ARF565 FAST RECOVERY DIODE
FINAL SPECIFICATION nov 97 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
SINE WAVE
DC
DC
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
4000
0
200
400
600
800
1000
1200
1400
1600
Mean Forward Current [A]
Power Dissipation [
W
]
ANSALDO
180
120
90
60
30
0
500
1000
1500
2000
2500
3000
3500
4000
0
200
400
600
800
1000
1200
1400
1600
Mean Forward Current [A]
Power Dissipation [
W
]
ARF565 FAST RECOVERY DIODE
FINAL SPECIFICATION nov 97 - ISSUE : 02
SWITCHING CHARACTERISTICS
ANSALDO
REVERSE RECOVERY CHARGE
Tj = 125 C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100
200
300
400
di/dt [A/s]
Qrr [C]
500 A
1000 A
2000 A
REVERSE RECOVERY CURRENT
Tj = 125 C
0
100
200
300
400
500
600
700
800
900
1000
1100
0
100
200
300
400
di/dt [A/s]
Irr [A]
500 A
1000 A
2000 A
FORWARD RECOVERY VOLTAGE
0
5
10
15
20
25
30
35
40
0
200
400
600
800
1000
1200
di/dt [A/s]
VFR [V]
Tj = 125 C
Tj = 25 C
I
F
V
FR
V
F
ta
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr (Qrr - Irr ta / 2 )
Irr
Vr
tb
I
F
d i/d t
ARF565 FAST RECOVERY DIODE
FINAL SPECIFICATION nov 97 - ISSUE : 02
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 C
0
500
1000
1500
2000
2500
3000
3500
4000
0.6
1.6
2.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 150 C
0
2
4
6
8
10
12
14
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
ANSALDO