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Электронный компонент: ARF744S25

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FAST RECOVERY DIODE
ARF744
Repetitive voltage up to
2500
V
Mean forward current
3725
A
Surge current
48
kA
FINAL SPECIFICATION
apr 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
2500
V
V
RSM
Non-repetitive peak reverse voltage
150
2600
V
I
RRM
Repetitive peak reverse current
V=VRRM
150
150
mA
CONDUCTING
I
F (AV)
Mean forward current
180 sin ,50 Hz, Th=55C, double side cooled
3725
A
I
F (AV)
Mean forward current
180 square,50 Hz,Th=55C,double side cooled
3800
A
I
FSM
Surge forward current
Sine wave, 10 ms
150
48
kA
I t
I t
reapplied reverse voltage up to 50% VRSM
11520 x1E3
As
V
FM
Forward voltage
Forward current =2000 A
25
1.35
V
V
F(TO)
Threshold voltage
150
0.85
V
r
F
Forward slope resistance
150
0.160
mohm
SWITCHING
t rr
Reverse recovery time
I F = 1000 A
5
s
Q rr
Reverse recovery charge
di/dt=
60 A/s
150
500
C
I rr
Peak reverse recovery current
VR =
50 V
200
A
s
Softness (s-factor), min
0.5
V
FR
Peak forward recovery
di/dt=
400 A/s
150
10
V
MOUNTING
R
th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
11
C/kW
T
j
Operating junction temperature
-30 / 150
C
F
Mounting force
46.0 / 54.0
kN
Mass
1700
g
ORDERING INFORMATION : ARF744 S 25
standard specification
VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
ARF744 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SQUARE WAVE
SINE WAVE
DC
180
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0
1000
2000
3000
4000
5000
Mean Forward Current [A]
Power Dissipation [
W
]
60
90
30
120
ANSALDO
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0
1000
2000
3000
4000
5000
Mean Forward Current [A]
Power Dissipation [
W
]
180
120
90
60
30
ARF774 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 01
SWITCHING CHARACTERISTICS
ANSALDO
REVERSE RECOVERY CHARGE
Tj = 125 C
0
500
1000
1500
2000
2500
3000
0
100
200
300
400
di/dt [A/s]
Qrr [C]
250 A
500 A
1000 A
FORWARD RECOVERY VOLTAGE
0
10
20
30
40
50
60
0
200
400
600
800
1000
1200
di/dt [A/s]
VFR [V]
Tj = 125 C
Tj = 25 C
I
F
V
FR
V
F
Irr
Vr
ta
tb
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr (Qrr - Irr ta / 2 )
I
F
d i/d t
REVERSE RECOVERY CURRENT
Tj = 125 C
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0
100
200
300
400
di/dt [A/s]
Irr [A]
250 A
500 A
1000 A
ARF744 FAST RECOVERY DIODE
FINAL SPECIFICATION apr 97 - ISSUE : 02
Distributed by
FORWARD CHARACTERISTIC
Tj = 150 C
0
2000
4000
6000
8000
10000
12000
0.6
1.1
1.6
2.1
2.6
Forward Voltage [V]
Forward Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 150 C
0
5
10
15
20
25
30
35
40
45
50
1
10
100
n cycles
ITSM [kA]
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
ANSALDO