PHASE CONTROL THYRISTOR
AT681
Repetitive voltage up to
6000
V
Mean on-state current
840
A
Surge current
10
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
120
6000
V
V
RSM
Non-repetitive peak reverse voltage
120
6100
V
V
DRM
Repetitive peak off-state voltage
120
6000
V
I
RRM
Repetitive peak reverse current
V=VRRM
120
150
mA
I
DRM
Repetitive peak off-state current
V=VDRM
120
150
mA
CONDUCTING
I
T (AV)
Mean on-state current
180 sin, 50 Hz, Th=55C, double side cooled
840
A
I
T (AV)
Mean on-state current
180 sin, 50 Hz, Tc=85C, double side cooled
705
A
I
TSM
Surge on-state current
sine wave, 10 ms
120
10
kA
I t
I t
without reverse voltage
500 x1E3
As
V
T
On-state voltage
On-state current =
1570 A
25
2.4
V
V
T(TO)
Threshold voltage
120
1.3
V
r
T
On-state slope resistance
120 1.150
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current
From 75% VDRM up to 1200 A
120
100
A/s
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 75% of VDRM
120
500
V/s
td
Gate controlled delay time, typical
VD=200V, gate source 20V, 10 ohm
25
5
s
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/s linear up to 80% VDRM
650
s
Q rr
Reverse recovery charge
di/dt=-60 A/s, I= 1000 A
120
C
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
25
300
mA
I
L
Latching current, typical
25
700
mA
GATE
V
GT
Gate trigger voltage
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
400
mA
V
GD
Non-trigger gate voltage, min.
0.5 VDRM
120
0.5
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 s
150
W
P
G
Average gate power dissipation
2
W
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
21
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
6
C/kW
T
j
Operating junction temperature
120
C
F
Mounting force
22.0 / 24.5
kN
Mass
520
g
ORDERING INFORMATION : AT681 S 60
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
AT681 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
ON-STATE CHARACTERISTIC
Tj = 120 C
0
500
1000
1500
2000
2500
3000
0.6
1.6
2.6
3.6
4.6
On-state Voltage [V]
On-state Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 120 C
0
1
2
3
4
5
6
7
8
9
10
1
10
100
n cycles
ITSM [kA]
ANSALDO
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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